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NPN Transistor. 2SC3466 Datasheet

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NPN Transistor. 2SC3466 Datasheet
















2SC3466 Transistor. Datasheet pdf. Equivalent













Part

2SC3466

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·High Breakdown Voltage- : V(BR) CBO= 1200V(Min) ·Fast Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust devic e performance and reliable operation AP PLICATIONS ·Designed for switching reg ulator Applications ABSOLUTE MAXIMUM R ATINGS(Ta=25℃) SYMBOL PARAMETER VA LUE UNIT VCBO Collecto.
Manufacture

INCHANGE

Datasheet
Download 2SC3466 Datasheet


INCHANGE 2SC3466

2SC3466; r-Base Voltage 1200 V VCEO Collector -Emitter Voltage 650 V VEBO Emitter -Base Voltage 7 V IC Collector Curr ent-Continuous 8 A ICM Collector Cu rrent-Peak 20 A IB Base Current-Con tinuous PC Collector Power Dissipatio n @ TC=25℃ TJ Junction Temperature 3 A 120 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC346 6 isc website:www.iscse.


INCHANGE 2SC3466

mi.com 1 isc & iscsemi is registered tr ademark isc Silicon NPN Power Transist or ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PA RAMETER CONDITIONS V(BR)CEO Collector -Emitter Breakdown Voltage IC= 5mA; RBE = ∞ V(BR)CBO Collector-Base Breakdow n Voltage IC= 1mA; IE= 0 V(BR)EBO Emi tter-Base Breakdown Voltage IE= 1mA; I C= 0 VCE(sat) Collect.


INCHANGE 2SC3466

or-Emitter Saturation Voltage IC= 4A; IB = 0.8A VBE(sat) Base-Emitter Saturatio n Voltage IC= 4A; IB= 0.8A ICBO Coll ector Cutoff Current VCB= 650V; IE=0 IEBO Emitter Cutoff Current VEB= 5V; IC=0 hFE-1 DC Current Gain IC= 1A; V CE= 5V hFE-2 DC Current Gain IC= 4A; VCE= 5V COB Output Capacitance IE= 0; VCB= 10V; ftest=1.0MHz fT Current- Gain—Bandwidth Pro.





Part

2SC3466

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·High Breakdown Voltage- : V(BR) CBO= 1200V(Min) ·Fast Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust devic e performance and reliable operation AP PLICATIONS ·Designed for switching reg ulator Applications ABSOLUTE MAXIMUM R ATINGS(Ta=25℃) SYMBOL PARAMETER VA LUE UNIT VCBO Collecto.
Manufacture

INCHANGE

Datasheet
Download 2SC3466 Datasheet




 2SC3466
isc Silicon NPN Power Transistor
DESCRIPTION
·High Breakdown Voltage-
: V(BR)CBO= 1200V(Min)
·Fast Switching Speed
·Wide Area of Safe Operation
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for switching regulator Applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1200
V
VCEO
Collector-Emitter Voltage
650
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-Peak
20
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
3
A
120
W
150
Tstg
Storage Temperature Range
-55~150
2SC3466
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




 2SC3466
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A
VBE(sat) Base-Emitter Saturation Voltage
IC= 4A; IB= 0.8A
ICBO
Collector Cutoff Current
VCB= 650V; IE=0
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
hFE-2
DC Current Gain
IC= 4A; VCE= 5V
COB
Output Capacitance
IE= 0; VCB= 10V; ftest=1.0MHz
fT
Current-Gain—Bandwidth Product
IC= 1A; VCE= 10V
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 4A , IB1= 0.8A; IB2= -1.6A
RL= 50Ω; VCC=200V
2SC3466
MIN TYP. MAX UNIT
650
V
1200
V
7
V
3.0
V
1.5
V
100 μA
100 μA
10
40
6
120
pF
5
MHz
1.0 μs
4.0 μs
0.7 μs
hFE-1 Classifications
K
L
M
10-20 15-30 20-40
Notice
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark








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