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NPN Transistor. 2SC3486 Datasheet

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NPN Transistor. 2SC3486 Datasheet
















2SC3486 Transistor. Datasheet pdf. Equivalent













Part

2SC3486

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·H igh Reliability ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for ro bust device performance and reliable op eration APPLICATIONS ·Designed for hig h definition CRT display horizontal def lection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) .
Manufacture

INCHANGE

Datasheet
Download 2SC3486 Datasheet


INCHANGE 2SC3486

2SC3486; SYMBOL PARAMETER VALUE UNIT VCBO C ollector-Base Voltage 1500 V VCEO C ollector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collec tor Current- Continuous 6 A ICP Col lector Current-Pulse PC Collector Pow er Dissipation @ TC=25℃ TJ Junction Temperature 16 A 120 W 150 ℃ Tstg Storage Temperature Range -55~15 0 ℃ 2SC3486 isc web.


INCHANGE 2SC3486

site:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NP N Power Transistor 2SC3486 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherw ise specified SYMBOL PARAMETER CONDI TIONS MIN TYP. MAX UNIT V(BR)CEO Coll ector-Emitter Breakdown Voltage IC= 5mA ; RBE= ∞ 800 V V(BR)CBO Collector- Base Breakdown Voltage IC= 5mA; IE= 0 1500 V V(BR)EBO Emitt.


INCHANGE 2SC3486

er-Base Breakdown Voltage IE= 5mA; IC= 0 7 V VCE(sat) Collector-Emitter Sat uration Voltage IC= 5A; IB= 1.2A 5.0 V VBE(sat) Base-Emitter Saturation Vol tage IC= 5A; IB= 1.2A 1.5 V ICBO C ollector Cutoff Current VCB= 800V; IE= 0 10 μA IEBO Emitter Cutoff Curren t VEB= 5V; IC= 0 1 mA hFE DC Curre nt Gain IC= 1A; VCE= 5V 8 fT Curren t-Gain—Bandwidth Pr.





Part

2SC3486

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·H igh Reliability ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for ro bust device performance and reliable op eration APPLICATIONS ·Designed for hig h definition CRT display horizontal def lection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) .
Manufacture

INCHANGE

Datasheet
Download 2SC3486 Datasheet




 2SC3486
isc Silicon NPN Power Transistor
DESCRIPTION
·High Breakdown Voltage-
: VCBO= 1500V (Min)
·High Switching Speed
·High Reliability
·Built-in Damper Diode
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high definition CRT display horizontal
deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current- Continuous
6
A
ICP
Collector Current-Pulse
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
16
A
120
W
150
Tstg
Storage Temperature Range
-55~150
2SC3486
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




 2SC3486
isc Silicon NPN Power Transistor
2SC3486
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞
800
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= 5mA; IE= 0
1500
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 5mA; IC= 0
7
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1.2A
5.0
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB= 1.2A
1.5
V
ICBO
Collector Cutoff Current
VCB= 800V; IE= 0
10 μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
1
mA
hFE
DC Current Gain
IC= 1A; VCE= 5V
8
fT
Current-Gain—Bandwidth Product
IC= 1A; VCE= 10V
3
MHz
tstg
Storage Time
tf
Fall Time
IC= 5A, IB1= 1A; IB2= -2A;RL= 40Ω
3.0 μs
0.3 μs
Notice
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark








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