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NPN Transistor. 2SC3506 Datasheet

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NPN Transistor. 2SC3506 Datasheet
















2SC3506 Transistor. Datasheet pdf. Equivalent













Part

2SC3506

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor 2SC350 6 DESCRIPTION ·High Collector-Base Br eakdown Voltage- : V(BR)CBO= 1000V(Min) ·High Switching Speed APPLICATIONS Designed for switching regulator and h igh voltage switching applications. AB SOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBO L PARAMETER VALUE UNIT VCBO Collec tor-Base Voltage 1000 V VCEO Collec tor-Emitter Voltage 80.
Manufacture

INCHANGE

Datasheet
Download 2SC3506 Datasheet


INCHANGE 2SC3506

2SC3506; 0 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 6 A IB Base Current-Continuous Collector Pow er Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junct ion Temperature 2 A 70 W 3 150 ℃ Tstg Storage Temperature Range -55~ 150 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registe.


INCHANGE 2SC3506

red trademark isc Silicon NPN Power Tra nsistor ELECTRICAL CHARACTERISTICS TC= 25℃ unless otherwise specified SYMBO L PARAMETER CONDITIONS VCEO(SUS) Col lector-Emitter Sustaining Voltage IC= 1 mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A VB E(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.4A ICBO Collector Cuto ff Current VCB= 100.


INCHANGE 2SC3506

0V ; IE= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 hFE DC Current Gain IC= 2A ; VCE= 5V fT Current-Gain—B andwidth Product IC= 0.2A ; VCE= 5V; f = 1MHz Switching times ton Turn-On T ime tstg Storage Time tf Fall Time IC= 2A; IB1= 0.4A, IB2= -0.8A; VCC= 25 0V 2SC3506 MIN TYP. MAX UNIT 800 V 1.5 V 1.5 V 50 μA 50 μA 6 4 MHz 1.0 μs 2.5 μs 0.5.





Part

2SC3506

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor 2SC350 6 DESCRIPTION ·High Collector-Base Br eakdown Voltage- : V(BR)CBO= 1000V(Min) ·High Switching Speed APPLICATIONS Designed for switching regulator and h igh voltage switching applications. AB SOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBO L PARAMETER VALUE UNIT VCBO Collec tor-Base Voltage 1000 V VCEO Collec tor-Emitter Voltage 80.
Manufacture

INCHANGE

Datasheet
Download 2SC3506 Datasheet




 2SC3506
isc Silicon NPN Power Transistor
2SC3506
DESCRIPTION
·High Collector-Base Breakdown Voltage-
: V(BR)CBO= 1000V(Min)
·High Switching Speed
APPLICATIONS
·Designed for switching regulator and high voltage
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1000
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base voltage
7
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Peak
6
A
IB
Base Current-Continuous
Collector Power Dissipation
@ TC=25
PC
Collector Power Dissipation
@ Ta=25
TJ
Junction Temperature
2
A
70
W
3
150
Tstg
Storage Temperature Range
-55~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




 2SC3506
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 1mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A; IB= 0.4A
ICBO
Collector Cutoff Current
VCB= 1000V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
hFE
DC Current Gain
IC= 2A ; VCE= 5V
fT
Current-Gain—Bandwidth Product
IC= 0.2A ; VCE= 5V; f= 1MHz
Switching times
ton
Turn-On Time
tstg
Storage Time
tf
Fall Time
IC= 2A; IB1= 0.4A, IB2= -0.8A;
VCC= 250V
2SC3506
MIN TYP. MAX UNIT
800
V
1.5
V
1.5
V
50 μA
50 μA
6
4
MHz
1.0 μs
2.5 μs
0.5 μs
Notice
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark








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