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NPN Transistor. 2SC3519A Datasheet

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NPN Transistor. 2SC3519A Datasheet
















2SC3519A Transistor. Datasheet pdf. Equivalent













Part

2SC3519A

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistors DESCR IPTION ·Collector-Emitter Breakdown Vo ltage- V(BR)CEO= 160V(Min)-2SC3519 = 18 0V(Min)-2SC3519A ·Good Linearity of hF E ·Complement to Type 2SA1386/A ·Mini mum Lot-to-Lot variations for robust de vice performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃).
Manufacture

INCHANGE

Datasheet
Download 2SC3519A Datasheet


INCHANGE 2SC3519A

2SC3519A; SYMBOL PARAMETER VALUE UNIT 2SC351 9 160 VCBO Collector-Base Voltage V 2SC3519A 180 2SC3519 160 VCEO Co llector-Emitter Voltage V 2SC3519A 1 80 VEBO Emitter-Base Voltage 5 V I C Collector Current-Continuous 15 A IB Base Current-Continuous PC Colle ctor Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 130 W 150 ℃ Tstg Storage T.


INCHANGE 2SC3519A

emperature Range -55~150 ℃ 2SC3519/ A isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors 2SC3519 /A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PA RAMETER CONDITIONS V(BR)CEO Collecto r-Emitter Breakdown Voltage 2SC3519 2S C3519A IC= 25mA ; IB= 0 VCE(sat) Coll ector-Emitter Saturation.


INCHANGE 2SC3519A

Voltage IC= 5.0A; IB= 0.5A ICBO Colle ctor Cutoff Current 2SC3519 VCB= 160V; IE= 0 2SC3519A VCB= 180V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 5A ; VCE= 4 V COB Output Capacitance IE= 0; VCB= 10V;ftest= 1.0MHz fT Current-Gain— Bandwidth Product IE= -2A ; VCE= 12V S witching Times ton Turn-on Time tstg Storage Time tf .





Part

2SC3519A

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistors DESCR IPTION ·Collector-Emitter Breakdown Vo ltage- V(BR)CEO= 160V(Min)-2SC3519 = 18 0V(Min)-2SC3519A ·Good Linearity of hF E ·Complement to Type 2SA1386/A ·Mini mum Lot-to-Lot variations for robust de vice performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃).
Manufacture

INCHANGE

Datasheet
Download 2SC3519A Datasheet




 2SC3519A
isc Silicon NPN Power Transistors
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
V(BR)CEO= 160V(Min)-2SC3519
= 180V(Min)-2SC3519A
·Good Linearity of hFE
·Complement to Type 2SA1386/A
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
2SC3519
160
VCBO
Collector-Base
Voltage
V
2SC3519A
180
2SC3519
160
VCEO
Collector-Emitter
Voltage
V
2SC3519A
180
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
15
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
4
A
130
W
150
Tstg
Storage Temperature Range
-55~150
2SC3519/A
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




 2SC3519A
isc Silicon NPN Power Transistors
2SC3519/A
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-Emitter
Breakdown Voltage
2SC3519
2SC3519A
IC= 25mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5.0A; IB= 0.5A
ICBO
Collector
Cutoff Current
2SC3519 VCB= 160V; IE= 0
2SC3519A VCB= 180V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 5A ; VCE= 4V
COB
Output Capacitance
IE= 0; VCB= 10V;ftest= 1.0MHz
fT
Current-Gain—Bandwidth Product IE= -2A ; VCE= 12V
Switching Times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 10A ,RL= 4Ω,
IB1= -IB2= 1A,VCC= 40V
MIN TYP. MAX UNIT
160
V
180
2.0
V
100
μA
100
100 μA
50
180
250
pF
50
MHz
0.2
μs
1.3
μs
0.45
μs
hFE Classifications
O
P
Y
50-100 70-140 90-180
Notice
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark








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