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NPN Transistor. 2SC3549 Datasheet

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NPN Transistor. 2SC3549 Datasheet
















2SC3549 Transistor. Datasheet pdf. Equivalent













Part

2SC3549

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistors 2SC35 49 DESCRIPTION ·High Voltage ·High S peed Switching ·High Reliability ·Min imum Lot-to-Lot variations for robust d evice performance and reliable operatio n APPLICATIONS ·Switching regulators DC-DC converter ·Solids state relay General purpose power amplifiers ABSO LUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCB.
Manufacture

INCHANGE

Datasheet
Download 2SC3549 Datasheet


INCHANGE 2SC3549

2SC3549; O Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEB O Emitter-Base Voltage 10 V IC Col lector Current-Continuous 3 A IB Ba se Current-Continuous PC Collector Po wer Dissipation @ TC=25℃ TJ Junctio n Temperature 1 A 40 W 150 ℃ T stg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Therm.


INCHANGE 2SC3549

al Resistance,Junction to Case MAX UNIT 4.16 ℃/W isc website:www.iscsemi. com 1 isc & iscsemi is registered trad emark isc Silicon NPN Power Transistor s 2SC3549 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SY MBOL PARAMETER CONDITIONS V(BR)CEO C ollector-Emitter Breakdown Voltage IC= 10mA; IB= 0 V(BR)CBO Collector-Base Br eakdown Voltage IC= 1mA.


INCHANGE 2SC3549

; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Coll ector-Emitter Saturation Voltage IC= 1A ; IB= 0.2A VBE(sat) Base-Emitter Satur ation Voltage IC= 1A; IB= 0.2A ICBO Collector Cutoff Current VCB= 900V; IE = 0 IEBO Emitter Cutoff Current VEB= 10V; IC= 0 hFE DC Current Gain IC= 1A ; VCE= 5V Switching times ton Tur n-on Time tstg S.





Part

2SC3549

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistors 2SC35 49 DESCRIPTION ·High Voltage ·High S peed Switching ·High Reliability ·Min imum Lot-to-Lot variations for robust d evice performance and reliable operatio n APPLICATIONS ·Switching regulators DC-DC converter ·Solids state relay General purpose power amplifiers ABSO LUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCB.
Manufacture

INCHANGE

Datasheet
Download 2SC3549 Datasheet




 2SC3549
isc Silicon NPN Power Transistors
2SC3549
DESCRIPTION
·High Voltage
·High Speed Switching
·High Reliability
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Switching regulators
·DC-DC converter
·Solids state relay
·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
900
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current-Continuous
3
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
1
A
40
W
150
Tstg
Storage Temperature Range
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
4.16 /W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




 2SC3549
isc Silicon NPN Power Transistors
2SC3549
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A
VBE(sat) Base-Emitter Saturation Voltage
IC= 1A; IB= 0.2A
ICBO
Collector Cutoff Current
VCB= 900V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 10V; IC= 0
hFE
DC Current Gain
IC= 1A ; VCE= 5V
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 2A , IB1= 0.4A; IB2= -0.8A
RL=150Ω;
PW= 20μs; Duty2%
MIN TYP. MAX UNIT
800
V
900
V
10
V
1.0
V
1.5
V
1.0 mA
1.0 mA
10
1.0 μs
4.0 μs
0.8 μs
Notice
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark








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