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NPN Transistor. 2SC3568 Datasheet

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NPN Transistor. 2SC3568 Datasheet
















2SC3568 Transistor. Datasheet pdf. Equivalent













Part

2SC3568

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·Low Collector Saturation Voltag e ·Fast Switching Speed ·Complement t o Type 2SA1396 ·Minimum Lot-to-Lot var iations for robust device performance a nd reliable operation APPLICATIONS ·De signed for switching regulator, DC-DC c onverter and high frequency power ampli fier applications. ABSOLUTE MAXIMUM RA TINGS(Ta=25℃) SYMBOL .
Manufacture

INCHANGE

Datasheet
Download 2SC3568 Datasheet


INCHANGE 2SC3568

2SC3568; PARAMETER VALUE UNIT VCBO Collector-Ba se Voltage 150 V VCEO Collector-Emit ter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-C ontinuous 10 A ICM Collector Curren t-Peak 20 A IB Base Current-Continu ous PC Total Power Dissipation @ TC=2 5℃ TJ Junction Temperature 5 A 3 0 W 150 ℃ Tstg Storage Temperatu re Range -55~150 ℃ 2.


INCHANGE 2SC3568

SC3568 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELEC TRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO VCEX(SUS)-1 VCEX(SUS) -2 VCE(sat) Collector-Emitter Sustaini ng Voltage Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining V oltage Collector-Emitt.


INCHANGE 2SC3568

er Saturation Voltage IC= 30mA ; IB= 0 IC= 5.0A ; IB1=-IB2= 0.5A, L=180μH,cla mped IC= 10A ; IB1= 1.0A; IB2= -0.5A, L = 180μH,clamped IC= 3.0A; IB= 0.3A VB E(sat) Base-Emitter Saturation Voltage IC= 3.0A; IB= 0.3A ICBO Collector Cu toff Current VCB= 100V; IE= 0 ICER C ollector Cutoff Current ICEX Collecto r Cutoff Current IEBO Emitter Cutoff Current VCE= 100V; .





Part

2SC3568

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·Low Collector Saturation Voltag e ·Fast Switching Speed ·Complement t o Type 2SA1396 ·Minimum Lot-to-Lot var iations for robust device performance a nd reliable operation APPLICATIONS ·De signed for switching regulator, DC-DC c onverter and high frequency power ampli fier applications. ABSOLUTE MAXIMUM RA TINGS(Ta=25℃) SYMBOL .
Manufacture

INCHANGE

Datasheet
Download 2SC3568 Datasheet




 2SC3568
isc Silicon NPN Power Transistor
DESCRIPTION
·Low Collector Saturation Voltage
·Fast Switching Speed
·Complement to Type 2SA1396
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for switching regulator, DC-DC converter and
high frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
150
V
VCEO Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
20
A
IB
Base Current-Continuous
PC
Total Power Dissipation
@ TC=25
TJ
Junction Temperature
5
A
30
W
150
Tstg
Storage Temperature Range
-55~150
2SC3568
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




 2SC3568
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO
VCEX(SUS)-1
VCEX(SUS)-2
VCE(sat)
Collector-Emitter Sustaining Voltage
Collector-Emitter Sustaining Voltage
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
IC= 30mA ; IB= 0
IC= 5.0A ; IB1=-IB2= 0.5A,
L=180μH,clamped
IC= 10A ; IB1= 1.0A; IB2= -0.5A,
L= 180μH,clamped
IC= 3.0A; IB= 0.3A
VBE(sat) Base-Emitter Saturation Voltage
IC= 3.0A; IB= 0.3A
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0
ICER
Collector Cutoff Current
ICEX
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCE= 100V; RBE= 51Ω, Ta=125
VCE= 100V; VBE(off)= -1.5V
VCE= 100V; VBE(off)= -1.5V, Ta=125
VEB= 5V; IC=0
hFE-1
DC Current Gain
IC= 0.5A; VCE= 5V
hFE-2
DC Current Gain
IC= 3.0A; VCE= 5V
hFE-3
DC Current Gain
IC= 5.0A; VCE= 5V
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 5.0A ,RL= 10Ω,
IB1= -IB2= 0.5A,VCC50V
2SC3568
MIN MAX UNIT
100
V
100
V
100
V
0.6
V
1.5
V
10
μA
1.0
mA
10
μA
1.0
mA
10
μA
40
40
200
20
0.5
μs
1.5
μs
0.5
μs
hFE-2 Classifications
M
L
K
40-80 60-120 100-200
Notice
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark








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