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NPN Transistor. 2SC3752 Datasheet

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NPN Transistor. 2SC3752 Datasheet
















2SC3752 Transistor. Datasheet pdf. Equivalent













Part

2SC3752

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·High Breakdown Voltage and High Reliability ·High Switching Speed ·W ide Area of Safe Operation ·Minimum Lo t-to-Lot variations for robust device p erformance and reliable operation APPLI CATIONS ·Designed for switching regula tor applications. ABSOLUTE MAXIMUM RAT INGS(Ta=25℃) SYMBOL PARAMETER VALU E UNIT VCBO Collector-Ba.
Manufacture

INCHANGE

Datasheet
Download 2SC3752 Datasheet


INCHANGE 2SC3752

2SC3752; se Voltage 1100 V VCEO Collector-Emit ter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-C ontinuous 3 A ICM Collector Current -Pulse 10 A IB Base Current-Continu ous PC Collector Power Dissipation @T C=25℃ TJ Junction Temperature 1.5 A 30 W 150 ℃ Tstg Storage Temp erature -55~150 ℃ 2SC3752 isc webs ite:www.iscsemi.com 1 i.


INCHANGE 2SC3752

sc & iscsemi is registered trademark is c Silicon NPN Power Transistor 2SC3752 ELECTRICAL CHARACTERISTICS Tj=25℃ u nless otherwise specified SYMBOL PARA METER CONDITIONS V(BR)CEO Collector-E mitter Breakdown Voltage IC= 5mA; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitt er-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) VBE(sat) .


INCHANGE 2SC3752

Collector-Emitter Saturation Voltage Ba se-Emitter Saturation Voltage IC= 1.5A ; IB= 0.3A IC= 1.5A; IB= 0.3A ICBO Co llector Cutoff Current VCB= 800V ; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 0.2A ; VCE= 5V hFE-2 DC Current Gain IC= 1A ; VCE= 5V fT Current-Gain—B andwidth Product IC= 0.2A ; VCE= 10V COB Output Capacita.





Part

2SC3752

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·High Breakdown Voltage and High Reliability ·High Switching Speed ·W ide Area of Safe Operation ·Minimum Lo t-to-Lot variations for robust device p erformance and reliable operation APPLI CATIONS ·Designed for switching regula tor applications. ABSOLUTE MAXIMUM RAT INGS(Ta=25℃) SYMBOL PARAMETER VALU E UNIT VCBO Collector-Ba.
Manufacture

INCHANGE

Datasheet
Download 2SC3752 Datasheet




 2SC3752
isc Silicon NPN Power Transistor
DESCRIPTION
·High Breakdown Voltage and High Reliability
·High Switching Speed
·Wide Area of Safe Operation
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for switching regulator applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
1100
V
VCEO Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Pulse
10
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@TC=25
TJ
Junction Temperature
1.5
A
30
W
150
Tstg
Storage Temperature
-55~150
2SC3752
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




 2SC3752
isc Silicon NPN Power Transistor
2SC3752
ELECTRICAL CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE=
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat)
VBE(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
IC= 1.5A; IB= 0.3A
IC= 1.5A; IB= 0.3A
ICBO
Collector Cutoff Current
VCB= 800V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 0.2A ; VCE= 5V
hFE-2
DC Current Gain
IC= 1A ; VCE= 5V
fT
Current-Gain—Bandwidth Product
IC= 0.2A ; VCE= 10V
COB
Output Capacitance
IE= 0; VCB= 10V; f= 1MHz
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 2A , IB1= 0.4A; IB2= -0.8A;
RL= 200Ω,VCC= 400V
MIN TYP. MAX UNIT
800
V
1100
V
7
V
2.0
V
1.5
V
10 μA
10 μA
10
40
8
15
MHz
60
pF
0.5 μs
3.0 μs
0.3 μs
hFE-1 Classifications
K
L
M
10-20 15-30 20-40
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark








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