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NPN Transistor. 2SC3822 Datasheet

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NPN Transistor. 2SC3822 Datasheet
















2SC3822 Transistor. Datasheet pdf. Equivalent













Part

2SC3822

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor 2SC382 2 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V (M in) ·High Speed Switching ·High Relia bility ·Minimum Lot-to-Lot variations for robust device performance and relia ble operation APPLICATIONS ·Switching regulators ·DC-DC converters ·Solid s tate relay ·General purpose power ampl ifiers ABSOLUTE MAXIMUM R.
Manufacture

INCHANGE

Datasheet
Download 2SC3822 Datasheet


INCHANGE 2SC3822

2SC3822; ATINGS(Ta=25℃) SYMBOL PARAMETER VAL UE UNIT VCBO Collector-Base Voltage 450 V VCEO Collector-Emitter Voltag e 400 V VCEO(SUS) Collector-Emitter Voltage 400 V VEBO Emitter-Base Vol tage 10 V IC Collector Current-Cont inuous 5 A IB Base Current-Continuo us PC Collector Power Dissipation @ T C=25℃ TJ Junction Temperature 2 A 30 W 150 ℃ Tstg .


INCHANGE 2SC3822

Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARA METER MAX UNIT Rth j-c Thermal Resist ance,Junction to Case 4.1 ℃/W isc we bsite:www.iscsemi.com 1 isc & iscsem i is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARAC TERISTICS TC=25℃ unless otherwise spe cified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter.


INCHANGE 2SC3822

Breakdown Voltage IC= 50mA; IB= 0 V(BR )CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base B reakdown Voltage IE= 10mA; IC= 0 VCE( sat) Collector-Emitter Saturation Volta ge IC= 2A; IB= 0.4A VBE(sat) Base-Emit ter Saturation Voltage IC= 2A; IB= 0.4 A ICBO Collector Cutoff Current VCB= 450V; IE= 0 IEBO Emitter Cutoff Curr ent VEB= 10V; IC=.





Part

2SC3822

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor 2SC382 2 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V (M in) ·High Speed Switching ·High Relia bility ·Minimum Lot-to-Lot variations for robust device performance and relia ble operation APPLICATIONS ·Switching regulators ·DC-DC converters ·Solid s tate relay ·General purpose power ampl ifiers ABSOLUTE MAXIMUM R.
Manufacture

INCHANGE

Datasheet
Download 2SC3822 Datasheet




 2SC3822
isc Silicon NPN Power Transistor
2SC3822
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V (Min)
·High Speed Switching
·High Reliability
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Switching regulators
·DC-DC converters
·Solid state relay
·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
450
V
VCEO
Collector-Emitter Voltage
400
V
VCEO(SUS) Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current-Continuous
5
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
2
A
30
W
150
Tstg
Storage Temperature Range
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 4.1 /W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




 2SC3822
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 10mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A; IB= 0.4A
ICBO
Collector Cutoff Current
VCB= 450V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 10V; IC= 0
hFE
DC Current Gain
IC= 2A; VCE= 5V
Switching times
ton
Turn-On Time
tstg
Storage Time
tf
Fall Time
IC= 4A; IB1= 0.8A; IB2= -1.6A;
RL= 37.5Ω;
PW=20μs; Duty Cycle2%
2SC3822
MIN TYP. MAX UNIT
400
V
450
V
10
V
0.8
V
1.2
V
1
mA
0.1 mA
10
30
1.0 μs
2.5 μs
0.5 μs
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark








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