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NPN Transistor. 2SC3833 Datasheet

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NPN Transistor. 2SC3833 Datasheet
















2SC3833 Transistor. Datasheet pdf. Equivalent













Part

2SC3833

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor 2SC383 3 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Mi n) ·High Switching Speed ·High Reliab ility ·Minimum Lot-to-Lot variations f or robust device performance and reliab le operation APPLICATIONS ·Designed fo r switching regulator and general purpo se applications. ABSOLUTE MAXIMUM RATI NGS(Ta=25℃) SYMBOL PA.
Manufacture

INCHANGE

Datasheet
Download 2SC3833 Datasheet


INCHANGE 2SC3833

2SC3833; RAMETER VALUE UNIT VCBO Collector-Ba se Voltage 500 V VCEO Collector-Emi tter Voltage 400 V VEBO Emitter-Bas e voltage 10 V IC Collector Current -Continuous 12 A ICM Collector Curr ent-Peak 24 A IB Base Current-Conti nuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 100 W 150 ℃ Tstg Storage Te mperature Range -55~1.


INCHANGE 2SC3833

50 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered trademar k isc Silicon NPN Power Transistor 2S C3833 ELECTRICAL CHARACTERISTICS TC=25 ℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collec tor-Emitter Breakdown Voltage IC= 25mA ; IB= 0 VCE(sat) Collector-Emitter Sat uration Voltage IC= 7A; IB= 1.4A VBE(s at) Base-Emitter Saturat.


INCHANGE 2SC3833

ion Voltage IC= 7A; IB= 1.4A ICBO Col lector Cutoff Current VCB= 500V ; IE= 0 IEBO Emitter Cutoff Current VEB= 1 0V; IC= 0 hFE DC Current Gain IC= 7A ; VCE= 4V COB Output Capacitance IE = 0 ; VCB= 10V; ftest= 1.0MHz fT Curr ent-Gain—Bandwidth Product IE= -1A ; VCE= 12V Switching Times ton Turn-o n Time tstg Storage Time tf Fall Ti me IC= 7A,IB1= 0.7A.





Part

2SC3833

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor 2SC383 3 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Mi n) ·High Switching Speed ·High Reliab ility ·Minimum Lot-to-Lot variations f or robust device performance and reliab le operation APPLICATIONS ·Designed fo r switching regulator and general purpo se applications. ABSOLUTE MAXIMUM RATI NGS(Ta=25℃) SYMBOL PA.
Manufacture

INCHANGE

Datasheet
Download 2SC3833 Datasheet




 2SC3833
isc Silicon NPN Power Transistor
2SC3833
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min)
·High Switching Speed
·High Reliability
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for switching regulator and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
500
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base voltage
10
V
IC
Collector Current-Continuous
12
A
ICM
Collector Current-Peak
24
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
4
A
100
W
150
Tstg
Storage Temperature Range
-55~150
isc websitewww.iscsemi.com
1
isc & iscsemi is registered trademark




 2SC3833
isc Silicon NPN Power Transistor
2SC3833
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB= 1.4A
VBE(sat) Base-Emitter Saturation Voltage
IC= 7A; IB= 1.4A
ICBO
Collector Cutoff Current
VCB= 500V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 10V; IC= 0
hFE
DC Current Gain
IC= 7A ; VCE= 4V
COB
Output Capacitance
IE= 0 ; VCB= 10V; ftest= 1.0MHz
fT
Current-Gain—Bandwidth Product
IE= -1A ; VCE= 12V
Switching Times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 7A,IB1= 0.7A; IB2= -1.4A
RL= 28.5Ω; VCC= 200V
MIN TYP. MAX UNIT
400
V
0.5
V
1.3
V
0.1 mA
0.1 mA
10
30
105
pF
10
MHz
1.0 μs
3.0 μs
0.5 μs
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark








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