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NPN Transistor. 2SC3851 Datasheet

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NPN Transistor. 2SC3851 Datasheet
















2SC3851 Transistor. Datasheet pdf. Equivalent













Part

2SC3851

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·Collector-Emitter Breakdown Vol tage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 40(Min)@ IC= 1A ·Complem ent to Type 2SA1488 ·Minimum Lot-to-Lo t variations for robust device performa nce and reliable operation APPLICATIONS ·Designed for audio and general purpo se applications. ABSOLUTE MAXIMUM RATI NGS(Ta=25℃) SYMBOL PA.
Manufacture

INCHANGE

Datasheet
Download 2SC3851 Datasheet


INCHANGE 2SC3851

2SC3851; RAMETER VALUE UNIT VCBO Collector-Bas e Voltage 80 V VCEO Collector-Emitt er Voltage 60 V VEBO Emitter-Base V oltage 6 V IC Collector Current-Con tinuous 4 A IB Base Current-Continu ous PC Collector Power Dissipation @T C=25℃ TJ Junction Temperature 1 A 25 W 150 ℃ Tstg Storage Temper ature -55~150 ℃ 2SC3851 isc websit e:www.iscsemi.com 1 isc.


INCHANGE 2SC3851

& iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICA L CHARACTERISTICS Tj=25℃ unless other wise specified SYMBOL PARAMETER COND ITIONS V(BR)CEO Collector-Emitter Brea kdown Voltage IC= 25mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage I C= 2A; IB= 0.2A ICBO Collector Cutoff Current VCB= 80V; IE= 0 IEBO Emitte r Cutoff Current VE.


INCHANGE 2SC3851

B= 6V; IC= 0 hFE DC Current Gain IC= 1A; VCE= 4V COB Output Capacitance I E= 0; VCB= 10V; f= 1MHz fT Current-Ga in—Bandwidth Product IE= -0.2A; VCE= 12V Switching Times ton Turn-On Tim e tstg Storage Time tf Fall Time I C= 2A; IB1= -IB2= 0.2A; VCC= 12V; RL= 6 Ω 2SC3851 MIN TYP. MAX UNIT 60 V 0.5 V 100 μA 100 μA 40 320 60 pF 15 MHz 0.2 μs 1.





Part

2SC3851

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·Collector-Emitter Breakdown Vol tage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 40(Min)@ IC= 1A ·Complem ent to Type 2SA1488 ·Minimum Lot-to-Lo t variations for robust device performa nce and reliable operation APPLICATIONS ·Designed for audio and general purpo se applications. ABSOLUTE MAXIMUM RATI NGS(Ta=25℃) SYMBOL PA.
Manufacture

INCHANGE

Datasheet
Download 2SC3851 Datasheet




 2SC3851
isc Silicon NPN Power Transistor
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min)
·DC Current Gain-
: hFE= 40(Min)@ IC= 1A
·Complement to Type 2SA1488
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
4
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@TC=25
TJ
Junction Temperature
1
A
25
W
150
Tstg
Storage Temperature
-55~150
2SC3851
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




 2SC3851
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A
ICBO
Collector Cutoff Current
VCB= 80V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
hFE
DC Current Gain
IC= 1A; VCE= 4V
COB
Output Capacitance
IE= 0; VCB= 10V; f= 1MHz
fT
Current-Gain—Bandwidth Product
IE= -0.2A; VCE= 12V
Switching Times
ton
Turn-On Time
tstg
Storage Time
tf
Fall Time
IC= 2A; IB1= -IB2= 0.2A;
VCC= 12V; RL= 6Ω
2SC3851
MIN TYP. MAX UNIT
60
V
0.5
V
100 μA
100 μA
40
320
60
pF
15
MHz
0.2
μs
1.0
μs
0.3
μs
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark








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