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NPN Transistor. 2SC3854 Datasheet

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NPN Transistor. 2SC3854 Datasheet
















2SC3854 Transistor. Datasheet pdf. Equivalent













Part

2SC3854

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·Collector-Emitter Breakdown Vol tage- V(BR)CEO= 120V(Min) ·Good Linear ity of hFE ·Complement to Type 2SA1490 ·Minimum Lot-to-Lot variations for ro bust device performance and reliable op eration APPLICATIONS ·For audio and ge neral purpose applications ABSOLUTE MA XIMUM RATINGS(Ta=25℃) SYMBOL PARAME TER VALUE UNIT VCBO C.
Manufacture

INCHANGE

Datasheet
Download 2SC3854 Datasheet


INCHANGE 2SC3854

2SC3854; ollector-Base Voltage 120 V VCEO Col lector-Emitter Voltage 120 V VEBO E mitter-Base Voltage 6 V IC Collecto r Current-Continuous 8 A IB Base Cu rrent-Continuous PC Collector Power D issipation @ TC=25℃ TJ Junction Tem perature 3 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3854 isc website:www.iscsemi.co m 1 isc & iscsemi is reg.


INCHANGE 2SC3854

istered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified S YMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 VCE(sat) Collector-Emitt er Saturation Voltage IC= 3A; IB= 0.3A ICBO Collector Cutoff Current VCB= 1 20V; IE= 0 IEBO Emitter Cutoff Curren t VEB= 6V; IC= 0 h.


INCHANGE 2SC3854

FE DC Current Gain IC= 3A; VCE= 4V fT Current-Gain—Bandwidth Product IE= -0.5A; VCE= 12V 2SC3854 MIN TYP. MAX UNIT 120 V 1.5 V 100 μA 100 μA 50 20 MHz NOTICE: ISC reserves t he rights to make changes of the conten t herein the datasheet at any time with out notification. The information conta ined herein is presented only as a guid e for the applications o.





Part

2SC3854

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·Collector-Emitter Breakdown Vol tage- V(BR)CEO= 120V(Min) ·Good Linear ity of hFE ·Complement to Type 2SA1490 ·Minimum Lot-to-Lot variations for ro bust device performance and reliable op eration APPLICATIONS ·For audio and ge neral purpose applications ABSOLUTE MA XIMUM RATINGS(Ta=25℃) SYMBOL PARAME TER VALUE UNIT VCBO C.
Manufacture

INCHANGE

Datasheet
Download 2SC3854 Datasheet




 2SC3854
isc Silicon NPN Power Transistor
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
V(BR)CEO= 120V(Min)
·Good Linearity of hFE
·Complement to Type 2SA1490
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·For audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
8
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
3
A
80
W
150
Tstg
Storage Temperature Range
-55~150
2SC3854
isc websitewww.iscsemi.com
1
isc & iscsemi is registered trademark




 2SC3854
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A
ICBO
Collector Cutoff Current
VCB= 120V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
hFE
DC Current Gain
IC= 3A; VCE= 4V
fT
Current-Gain—Bandwidth Product
IE= -0.5A; VCE= 12V
2SC3854
MIN TYP. MAX UNIT
120
V
1.5
V
100 μA
100 μA
50
20
MHz
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark








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