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NPN Transistor. 2SC3870 Datasheet

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NPN Transistor. 2SC3870 Datasheet
















2SC3870 Transistor. Datasheet pdf. Equivalent













Part

2SC3870

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRIP TION ·Collector-Base Breakdown Voltage - : V(BR)CBO= 500V(Min.) ·Low Collecto r Saturation Voltage ·Wide Area of Saf e Operation ·High Speed Switching ·Mi nimum Lot-to-Lot variations for robust device performance and reliable operati on APPLICATIONS ·Designed for high spe ed switching applications. ABSOLUTE MA XIMUM RATINGS (Ta=25℃) .
Manufacture

INCHANGE

Datasheet
Download 2SC3870 Datasheet


INCHANGE 2SC3870

2SC3870; SYMBOL PARAMETER VALUE UNIT VCBO Co llector-Base Voltage 500 V VCES Col lector-Emitter Voltage 500 V VCEO C ollector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collec tor Current-Continuous 7 A ICM Coll ector Current-Peak 15 A IB Base Cur rent-Continuous Collector Power Dissip ation @Ta=25℃ PC Collector Power Diss ipation @TC=25℃ Tj .


INCHANGE 2SC3870

Junction Temperature 3 A 2 W 40 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3870 · isc website www.iscsemi.com 1 isc & iscsemi is r egistered trademark isc Silicon NPN Po wer Transistor 2SC3870 ELECTRICAL CHA RACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITION S MIN TYP. MAX UNIT V(BR)CEO Collecto r-Emitter Breakdown Voltage.


INCHANGE 2SC3870

IC= 10mA; IB= 0 400 V VCE(sat) Colle ctor-Emitter Saturation Voltage IC= 3A; IB= 0.6A 1.0 V VBE(sat) Base-Emitte r Saturation Voltage IC= 3A; IB= 0.6A 1.5 V ICBO Collector Cutoff Current VCB= 500V; IE= 0 100 μA IEBO Emit ter Cutoff Current VEB= 5V; IC= 0 100 μA hFE-1 DC Current Gain IC= 0.1A; VCE= 5V 15 hFE-2 DC Current Gain I C= 3A; VCE= 5V 8 f.





Part

2SC3870

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRIP TION ·Collector-Base Breakdown Voltage - : V(BR)CBO= 500V(Min.) ·Low Collecto r Saturation Voltage ·Wide Area of Saf e Operation ·High Speed Switching ·Mi nimum Lot-to-Lot variations for robust device performance and reliable operati on APPLICATIONS ·Designed for high spe ed switching applications. ABSOLUTE MA XIMUM RATINGS (Ta=25℃) .
Manufacture

INCHANGE

Datasheet
Download 2SC3870 Datasheet




 2SC3870
isc Silicon NPN Power Transistor
DESCRIPTION
·Collector-Base Breakdown Voltage-
: V(BR)CBO= 500V(Min.)
·Low Collector Saturation Voltage
·Wide Area of Safe Operation
·High Speed Switching
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high speed switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
500
V
VCES
Collector-Emitter Voltage
500
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Peak
15
A
IB
Base Current-Continuous
Collector Power Dissipation
@Ta=25
PC
Collector Power Dissipation
@TC=25
Tj
Junction Temperature
3
A
2
W
40
150
Tstg
Storage Temperature Range
-55~150
2SC3870
·
isc websitewww.iscsemi.com
1
isc & iscsemi is registered trademark




 2SC3870
isc Silicon NPN Power Transistor
2SC3870
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
400
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A
1.0
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB= 0.6A
1.5
V
ICBO
Collector Cutoff Current
VCB= 500V; IE= 0
100 μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
100 μA
hFE-1
DC Current Gain
IC= 0.1A; VCE= 5V
15
hFE-2
DC Current Gain
IC= 3A; VCE= 5V
8
fT
Current-Gain—Bandwidth Product
IC= 0.5A; VCE= 10V; f= 10MHz
15
MHz
Switching Times
ton
Turn-on Time
0.7 μs
ts
Storage Time
IC= 3A; IB1= 0.6A; IB2= -1.2A;
VCC= 150V
2.0 μs
tf
Fall Time
0.3 μs
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark








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