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NPN Transistor. 2SC3873 Datasheet

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NPN Transistor. 2SC3873 Datasheet
















2SC3873 Transistor. Datasheet pdf. Equivalent













Part

2SC3873

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·Collector-Base Breakdown Voltag e- : V(BR)CBO= 500V(Min.) ·Low Collect or Saturation Voltage ·Wide Area of Sa fe Operation ·High Speed Switching ·M inimum Lot-to-Lot variations for robust device performance and reliable operat ion APPLICATIONS ·Designed for high s peed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃).
Manufacture

INCHANGE

Datasheet
Download 2SC3873 Datasheet


INCHANGE 2SC3873

2SC3873; SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCES C ollector-Emitter Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEB O Emitter-Base Voltage 7 V IC Coll ector Current-Continuous 12 A ICM C ollector Current-Peak 22 A IB Base Current-Continuous Collector Power Dis sipation @Ta=25℃ PC Collector Power D issipation @TC=25℃ .


INCHANGE 2SC3873

Tj Junction Temperature 5 A 3 W 100 150 ℃ Tstg Storage Temperature Ra nge -55~150 ℃ 2SC3873 · isc websi te:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NP N Power Transistor 2SC3873 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherw ise specified SYMBOL PARAMETER CONDI TIONS MIN TYP. MAX UNIT V(BR)CEO Coll ector-Emitter Breakdown Vol.


INCHANGE 2SC3873

tage IC= 10mA; IB= 0 400 V VCE(sat) C ollector-Emitter Saturation Voltage IC= 7A; IB= 1.4A 1.0 V VBE(sat) Base-Em itter Saturation Voltage IC= 7A; IB= 1 .4A 1.5 V ICBO Collector Cutoff Cur rent VCB= 500V; IE= 0 100 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 100 μA hFE-1 DC Current Gain IC= 0 .1A; VCE= 5V 15 hFE-2 DC Current Gai n IC= 7A; VCE= 5V .





Part

2SC3873

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·Collector-Base Breakdown Voltag e- : V(BR)CBO= 500V(Min.) ·Low Collect or Saturation Voltage ·Wide Area of Sa fe Operation ·High Speed Switching ·M inimum Lot-to-Lot variations for robust device performance and reliable operat ion APPLICATIONS ·Designed for high s peed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃).
Manufacture

INCHANGE

Datasheet
Download 2SC3873 Datasheet




 2SC3873
isc Silicon NPN Power Transistor
DESCRIPTION
·Collector-Base Breakdown Voltage-
: V(BR)CBO= 500V(Min.)
·Low Collector Saturation Voltage
·Wide Area of Safe Operation
·High Speed Switching
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high speed switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
500
V
VCES
Collector-Emitter Voltage
500
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
12
A
ICM
Collector Current-Peak
22
A
IB
Base Current-Continuous
Collector Power Dissipation
@Ta=25
PC
Collector Power Dissipation
@TC=25
Tj
Junction Temperature
5
A
3
W
100
150
Tstg
Storage Temperature Range
-55~150
2SC3873
·
isc websitewww.iscsemi.com
1
isc & iscsemi is registered trademark




 2SC3873
isc Silicon NPN Power Transistor
2SC3873
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
400
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB= 1.4A
1.0
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 7A; IB= 1.4A
1.5
V
ICBO
Collector Cutoff Current
VCB= 500V; IE= 0
100 μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
100 μA
hFE-1
DC Current Gain
IC= 0.1A; VCE= 5V
15
hFE-2
DC Current Gain
IC= 7A; VCE= 5V
8
fT
Current-Gain—Bandwidth Product
IC= 0.5A; VCE= 10V
30
MHz
Switching Times
ton
Turn-on Time
0.7 μs
ts
Storage Time
IC= 7A; IB1= 1.4A; IB2= -2.8A;
VCC= 150V
2.0 μs
tf
Fall Time
0.3 μs
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark








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