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NPN Transistor. 2SC3890 Datasheet

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NPN Transistor. 2SC3890 Datasheet
















2SC3890 Transistor. Datasheet pdf. Equivalent













Part

2SC3890

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·Collector-Emitter Breakdown Vol tage- : V(BR)CEO= 400V(Min) ·Low Colle ctor Saturation Voltage- : VCE(sat)= 0. 5V(Max)@ IC= 3A ·High Speed Switching ·Minimum Lot-to-Lot variations for rob ust device performance and reliable ope ration APPLICATIONS ·Designed for swit ching regulator and general purpose app lications. ABSOLUTE MA.
Manufacture

INCHANGE

Datasheet
Download 2SC3890 Datasheet


INCHANGE 2SC3890

2SC3890; XIMUM RATINGS(Ta=25℃) SYMBOL PARAMET ER VALUE UNIT VCBO Collector-Base Vo ltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Vol tage 10 V IC Collector Current-Cont inuous 7 A ICM Collector Current-Pe ak 14 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25 ℃ TJ Junction Temperature 2 A 30 W 150 ℃ Tstg Sto.


INCHANGE 2SC3890

rage Temperature -55~150 ℃ 2SC3890 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc S ilicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherw ise specified SYMBOL PARAMETER CONDI TIONS V(BR)CEO Collector-Emitter Break down Voltage IC= 25mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC = 3A; IB= 0.6A VBE(sat).


INCHANGE 2SC3890

Base-Emitter Saturation Voltage IC= 3A ; IB= 0.6A ICBO Collector Cutoff Curr ent VCB= 500V; IE= 0 IEBO Emitter Cu toff Current VEB= 10V; IC= 0 hFE DC Current Gain IC= 3A; VCE= 4V COB Out put Capacitance IE= 0; VCB= 10V; f= 1M Hz fT Current-Gain—Bandwidth Produc t IE= -0.5A; VCE= 12V Switching Times ton Turn-On Time tstg Storage Time tf Fall Time IC=.





Part

2SC3890

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·Collector-Emitter Breakdown Vol tage- : V(BR)CEO= 400V(Min) ·Low Colle ctor Saturation Voltage- : VCE(sat)= 0. 5V(Max)@ IC= 3A ·High Speed Switching ·Minimum Lot-to-Lot variations for rob ust device performance and reliable ope ration APPLICATIONS ·Designed for swit ching regulator and general purpose app lications. ABSOLUTE MA.
Manufacture

INCHANGE

Datasheet
Download 2SC3890 Datasheet




 2SC3890
isc Silicon NPN Power Transistor
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min)
·Low Collector Saturation Voltage-
: VCE(sat)= 0.5V(Max)@ IC= 3A
·High Speed Switching
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for switching regulator and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
500
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Peak
14
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@TC=25
TJ
Junction Temperature
2
A
30
W
150
Tstg
Storage Temperature
-55~150
2SC3890
isc websitewww.iscsemi.com
1
isc & iscsemi is registered trademark




 2SC3890
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB= 0.6A
ICBO
Collector Cutoff Current
VCB= 500V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 10V; IC= 0
hFE
DC Current Gain
IC= 3A; VCE= 4V
COB
Output Capacitance
IE= 0; VCB= 10V; f= 1MHz
fT
Current-Gain—Bandwidth Product
IE= -0.5A; VCE= 12V
Switching Times
ton
Turn-On Time
tstg
Storage Time
tf
Fall Time
IC= 3A; IB1= 0.3A; IB2= -0.6A;
VCC= 200V; RL= 66Ω
2SC3890
MIN TYP. MAX UNIT
400
V
0.5
V
1.3
V
100 μA
100 μA
10
30
50
pF
10
MHz
1.0 μs
3.0 μs
0.5 μs
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark








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