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NPN Transistor. 2SC3893 Datasheet

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NPN Transistor. 2SC3893 Datasheet
















2SC3893 Transistor. Datasheet pdf. Equivalent













Part

2SC3893

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·High Breakdown Voltage- :VCBO = 1400V (Min) ·High Switching Speed · Low Saturation Voltage ·Built-in Dampe r Diode ·Minimum Lot-to-Lot variations for robust device performance and reli able operation APPLICATIONS ·Designed for horizontal deflection output applic ations ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALU.
Manufacture

INCHANGE

Datasheet
Download 2SC3893 Datasheet


INCHANGE 2SC3893

2SC3893; E UNIT VCBO Collector-Base Voltage 1 400 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 8 A ICM Collector Current- Peak 15 A IB Base Current- Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 50 W 150 ℃ Tstg Storage Temperature Ra nge -55~150 ℃ 2SC38.


INCHANGE 2SC3893

93 isc website:www.iscsemi.com 1 is c & iscsemi is registered trademark is c Silicon NPN Power Transistor 2SC3893 ELECTRICAL CHARACTERISTICS TC=25℃ u nless otherwise specified SYMBOL PARA METER CONDITIONS V(BR)EBO Emitter-Bas e Breakdown Voltage IE= 200mA; IC= 0 V(BR)CBO Collector-Base Breakdown Volta ge IC= 50μA; IE= 0 VCE(sat) Collecto r-Emitter Saturation Vo.


INCHANGE 2SC3893

ltage IC= 6A; IB= 1.5A VBE(sat) Base-Em itter Saturation Voltage IC= 6A; IB= 1 .5A ICBO Collector Cutoff Current VC B= 500V; IE= 0 IEBO Emitter Cutoff Cu rrent VEB= 5V; IC= 0 hFE DC Current Gain IC= 1A; VCE= 5V VECF C-E Diode Forward Voltage IF= 6A fT Current-Ga in—Bandwidth Product IC= 0.1A; VCE= 10V COB Output Capacitance IE= 0; VC B= 10V; ftest=1.0MHz.





Part

2SC3893

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·High Breakdown Voltage- :VCBO = 1400V (Min) ·High Switching Speed · Low Saturation Voltage ·Built-in Dampe r Diode ·Minimum Lot-to-Lot variations for robust device performance and reli able operation APPLICATIONS ·Designed for horizontal deflection output applic ations ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALU.
Manufacture

INCHANGE

Datasheet
Download 2SC3893 Datasheet




 2SC3893
isc Silicon NPN Power Transistor
DESCRIPTION
·High Breakdown Voltage-
VCBO= 1400V (Min)
·High Switching Speed
·Low Saturation Voltage
·Built-in Damper Diode
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for horizontal deflection output applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1400
V
VCEO
Collector-Emitter Voltage
600
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current- Continuous
8
A
ICM
Collector Current- Peak
15
A
IB
Base Current- Continuous
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
4
A
50
W
150
Tstg
Storage Temperature Range
-55~150
2SC3893
isc websitewww.iscsemi.com
1
isc & iscsemi is registered trademark




 2SC3893
isc Silicon NPN Power Transistor
2SC3893
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 200mA; IC= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 50μA; IE= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.5A
VBE(sat) Base-Emitter Saturation Voltage
IC= 6A; IB= 1.5A
ICBO
Collector Cutoff Current
VCB= 500V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 1A; VCE= 5V
VECF
C-E Diode Forward Voltage
IF= 6A
fT
Current-Gain—Bandwidth Product
IC= 0.1A; VCE= 10V
COB
Output Capacitance
IE= 0; VCB= 10V; ftest=1.0MHz
Switching Times , Resistive load
tstg
Storage Time
tf
Fall Time
ICP= 6A, IB1= 1.2A; IB2= -2.4A;
RL= 33.3Ω
MIN TYP. MAX UNIT
5
V
1400
V
5.0
V
1.5
V
10 μA
66
200 mA
8
2.0
V
3
MHz
210
pF
2.5 μs
0.2 μs
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark








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