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NPN Transistor. BUX11 Datasheet

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NPN Transistor. BUX11 Datasheet
















BUX11 Transistor. Datasheet pdf. Equivalent













Part

BUX11

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor BUX11 DESCRIPTION ·Low Collector Saturation Voltage·High Switching Speed ·High C urrent Current Capability ·Minimum Lot -to-Lot variations for robust device pe rformance and reliable operation APPLIC ATIONS ·Motor control ·Linear and swi tching industrial equipment Absolute m aximum ratings(Ta=25℃) SYMBOL PARAM ETER VCBO VCEX VCEO Coll.
Manufacture

INCHANGE

Datasheet
Download BUX11 Datasheet


INCHANGE BUX11

BUX11; ector-Base Voltage Collector-Emitter Vol tage VBE= -1.5V Collector-Emitter Volta ge VEBO Emitter-Base Voltage IC Col lector Current-Continuous ICM Collect or Current-Peak IB Base Current-Conti nuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Ts tg Storage Temperature Range VALUE UN IT 250 V 250 V 200 V 7 V 20 A 25 A 4 A 150 .


INCHANGE BUX11

W 200 ℃ -65~200 ℃ THERMAL CHARAC TERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.17 ℃/W isc website:www.isc semi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Trans istor BUX11 ELECTRICAL CHARACTERISTIC S TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS ) Collector-Emitter Sustaini.


INCHANGE BUX11

ng Voltage IC=50mA; IB= 0 V(BR)EBO Emit ter-Base Breakdown Voltage IE= 50mA; I C= 0 VCE(sat)-1 Collector-Emitter Satu ration Voltage IC= 6A; IB= 0.6A VCE(sa t)-2 Collector-Emitter Saturation Volta ge IC= 12A ;IB= 1.5A VBE(sat) Base-Emi tter Saturation Voltage IC= 12A ;IB= 1 .5A ICEO Collector Cutoff Current IC BO Collector-Base Cutoff Current IEBO Emitter Cutoff C.




Part

BUX11

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor BUX11 DESCRIPTION ·Low Collector Saturation Voltage·High Switching Speed ·High C urrent Current Capability ·Minimum Lot -to-Lot variations for robust device pe rformance and reliable operation APPLIC ATIONS ·Motor control ·Linear and swi tching industrial equipment Absolute m aximum ratings(Ta=25℃) SYMBOL PARAM ETER VCBO VCEX VCEO Coll.
Manufacture

INCHANGE

Datasheet
Download BUX11 Datasheet




 BUX11
isc Silicon NPN Power Transistor
BUX11
DESCRIPTION
·Low Collector Saturation Voltage-
·High Switching Speed
·High Current Current Capability
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Motor control
·Linear and switching industrial equipment
Absolute maximum ratings(Ta=25)
SYMBOL
PARAMETER
VCBO
VCEX
VCEO
Collector-Base Voltage
Collector-Emitter Voltage
VBE= -1.5V
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
ICM
Collector Current-Peak
IB
Base Current-Continuous
PC
Collector Power Dissipation
@TC=25
Tj
Junction Temperature
Tstg
Storage Temperature Range
VALUE UNIT
250
V
250
V
200
V
7
V
20
A
25
A
4
A
150
W
200
-65~200
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 1.17 /W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




 BUX11
isc Silicon NPN Power Transistor
BUX11
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50mA; IC= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 6A; IB= 0.6A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 12A ;IB= 1.5A
VBE(sat) Base-Emitter Saturation Voltage
IC= 12A ;IB= 1.5A
ICEO
Collector Cutoff Current
ICBO
Collector-Base Cutoff Current
IEBO
Emitter Cutoff Current
VCE= 160V; IB= 0
VCB=VCBO; IE= 0
VCB=VCBO; IE= 0;TC=125
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 6A; VCE= 2V
hFE-2
DC Current Gain
IC= 12A; VCE= 4V
fT
Current-Gain—Bandwidth Product IC= 1A; VCE= 15V, ftest= 10MHz
Switching Times
ton
Turn-on Time
IC= 12A; IB1= 1.5A; VCC= 150V
ts
Storage Time
tf
Fall Time
IC= 12A; IB1= -IB2= 1.5A;
VCC= 150V
MIN TYP. MAX UNIT
200
V
7
V
0.6
V
1.5
V
1.5
V
1.5 mA
1.5
6.0
mA
1.0 mA
20
60
10
8
MHz
1.0 μs
1.8 μs
0.4 μs
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark








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