DatasheetsPDF.com

NPN Transistor. BUX37 Datasheet

DatasheetsPDF.com

NPN Transistor. BUX37 Datasheet
















BUX37 Transistor. Datasheet pdf. Equivalent













Part

BUX37

Description

NPN Transistor



Feature


isc Silicon NPN Darlington Power Transis tor DESCRIPTION ·Collector-Emitter Su staining Voltage- : VCEO(SUS)= 400V (Mi n) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power switchin g ·Solenoid drivers ·Automotive ignit ion ·Series and shunt regulators ABSO LUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT .
Manufacture

INCHANGE

Datasheet
Download BUX37 Datasheet


INCHANGE BUX37

BUX37; VCBO Collector-Base Voltage 400 V VC EO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC C ollector Current 15 A IB Base Curre nt PC Collector Power Dissipation @TC =25℃ Tj Junction Temperature 4 A 35 W 150 ℃ Tstg Storage Tempera ture Range -65~150 ℃ THERMAL CHARA CTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resis.


INCHANGE BUX37

tance, Junction to Case 1.5 ℃/W BUX3 7 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transisto r ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PAR AMETER CONDITIONS VCEO(SUS) Collector -Emitter Sustaining Voltage IC= 50mA; I B= 0; V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0.


INCHANGE BUX37

VCE(sat)-1 Collector-Emitter Saturatio n Voltage IC= 7A; IB= 70mA V CE(sat)-2 Collector-Emitter Saturation Voltage I C= 10A; IB= 150mA V BE(sat) Base-Emitt er Saturation Voltage IC= 10A; IB= 150 mA ICEO Collector Cutoff Current VCE = 400V; IB= 0 hFE DC Current Gain IC = 15A; VCE= 5V BUX37 MIN TYP. MAX UNI T 400 V 7 V 1.5 V 2.0 V 2.7 V 0.25 mA 20 NOT.




Part

BUX37

Description

NPN Transistor



Feature


isc Silicon NPN Darlington Power Transis tor DESCRIPTION ·Collector-Emitter Su staining Voltage- : VCEO(SUS)= 400V (Mi n) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power switchin g ·Solenoid drivers ·Automotive ignit ion ·Series and shunt regulators ABSO LUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT .
Manufacture

INCHANGE

Datasheet
Download BUX37 Datasheet




 BUX37
isc Silicon NPN Darlington Power Transistor
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V (Min)
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Power switching
·Solenoid drivers
·Automotive ignition
·Series and shunt regulators
ABSOLUTE MAXIMUM RATINGS (Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
400
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current
15
A
IB
Base Current
PC
Collector Power Dissipation
@TC=25
Tj
Junction Temperature
4
A
35
W
150
Tstg
Storage Temperature Range
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Thermal Resistance, Junction to Case
1.5 /W
BUX37
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




 BUX37
isc Silicon NPN Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0;
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50mA; IC= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 7A; IB= 70mA
V CE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 150mA
V BE(sat) Base-Emitter Saturation Voltage
IC= 10A; IB= 150mA
ICEO
Collector Cutoff Current
VCE= 400V; IB= 0
hFE
DC Current Gain
IC= 15A; VCE= 5V
BUX37
MIN TYP. MAX UNIT
400
V
7
V
1.5
V
2.0
V
2.7
V
0.25 mA
20
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark








Recommended third-party BUX37 Datasheet







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)