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NPN Transistor. BUX40A Datasheet

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NPN Transistor. BUX40A Datasheet
















BUX40A Transistor. Datasheet pdf. Equivalent













Part

BUX40A

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION · Collector-Emitter Sustaining V oltage- : VCEO(SUS) = 125V(Min) ·High Current Capability ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching and linear applications in m ilitary equipment. ABSOLUTE MAXIMUM RA TINGS(Ta=25℃) SYMBOL .
Manufacture

INCHANGE

Datasheet
Download BUX40A Datasheet


INCHANGE BUX40A

BUX40A; PARAMETER VALUE UNIT VCBO Collector-Ba se Voltage 160 V VCEO(SUS) Collector -Emitter Voltage 125 V VEBO Emitter -Base Voltage 7 V IC Collector Curr ent-Continuous 20 A ICM Collector C urrent-Peak 28 A IB Base Current-Co ntinuous PC Collector Power Dissipati on @TC=100℃ TJ Junction Temperature 4 A 120 W 200 ℃ Tstg Storage Temperature -65~200 .


INCHANGE BUX40A

℃ THERMAL CHARACTERISTICS SYMBOL PA RAMETER MAX UNIT Rth j-c Thermal Resi stance,Junction to Case 1.46 ℃/W BUX 40A isc website:www.iscsemi.com 1 i sc & iscsemi is registered trademark i sc Silicon NPN Power Transistor ELECTR ICAL CHARACTERISTICS TC=25℃ unless ot herwise specified SYMBOL PARAMETER C ONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50m.


INCHANGE BUX40A

A ; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB= 1A VCE (sat)-2 Collector-Emitter Saturation Vo ltage IC= 15A; IB= 1.88A VBE(sat) Base -Emitter Saturation Voltage IC= 15A; I B= 1.88A ICEO Collector Cutoff Curren t ICBO Collector Cutoff Current IEBO Emitter Cutoff Current VCE= 100V;IB= 0 VCB= 160V; IE= 0 VCB= 160V; IE= 0; T C= 125℃ VEB= 5V; I.





Part

BUX40A

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION · Collector-Emitter Sustaining V oltage- : VCEO(SUS) = 125V(Min) ·High Current Capability ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching and linear applications in m ilitary equipment. ABSOLUTE MAXIMUM RA TINGS(Ta=25℃) SYMBOL .
Manufacture

INCHANGE

Datasheet
Download BUX40A Datasheet




 BUX40A
isc Silicon NPN Power Transistor
DESCRIPTION
· Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 125V(Min)
·High Current Capability
·Good Linearity of hFE
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for switching and linear applications in military
equipment.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
160
V
VCEO(SUS) Collector-Emitter Voltage
125
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
20
A
ICM
Collector Current-Peak
28
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@TC=100
TJ
Junction Temperature
4
A
120
W
200
Tstg
Storage Temperature
-65~200
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 1.46 /W
BUX40A
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




 BUX40A
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB= 1A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 15A; IB= 1.88A
VBE(sat) Base-Emitter Saturation Voltage
IC= 15A; IB= 1.88A
ICEO
Collector Cutoff Current
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCE= 100V;IB= 0
VCB= 160V; IE= 0
VCB= 160V; IE= 0; TC= 125
VEB= 5V; IC=0
hFE-1
DC Current Gain
IC= 10A ; VCE= 4V
hFE-2
DC Current Gain
IC= 15A ; VCE= 4V
fT
Current-Gain—Bandwidth Product IC= 1A ; VCE= 15V; ftest= 10MHz
BUX40A
MIN TYP. MAX UNIT
125
V
1.2
V
1.6
V
2.0
V
3.0 mA
3.0
12
mA
1.0 mA
15
45
8
50
MHz
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark








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