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NPN Transistor. BUX42 Datasheet

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NPN Transistor. BUX42 Datasheet
















BUX42 Transistor. Datasheet pdf. Equivalent













Part

BUX42

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·Low Collector Saturation Voltag e- : VCE(sat)= 1.2V (Max.)@IC= 4A ·Fas t Switching Speed ·Minimum Lot-to-Lot variations for robust device performanc e and reliable operation APPLICATIONS ·Designed for use in switching and lin ear applications in military and indust rial equipment. Absolute maximum ratin gs(Ta=25℃) SYMBOL PA.
Manufacture

INCHANGE

Datasheet
Download BUX42 Datasheet


INCHANGE BUX42

BUX42; RAMETER VCEO VCEX VCBO Collector-Emitt er Voltage Collector-Emitter Voltage VB E= -1.5V Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Cur rent-Continuous ICM Collector Current -Peak IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storag e Temperature Range VALUE UNIT 250 V 300 V 300 V 7 .


INCHANGE BUX42

V 12 A 15 A 2.4 A 120 W 200 -65~200 ℃ THERMAL CHARACTERISTIC S SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1. 46 ℃/W BUX42 isc website:www.iscs emi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transi stor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(.


INCHANGE BUX42

SUS) Collector-Emitter Sustaining Voltag e IC=50mA ; IB= 0 V(BR)EBO Emitter-Bas e Breakdown Voltage IE= 50mA; IC= 0 V CE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A VCE(sat)-2 Co llector-Emitter Saturation Voltage IC= 6A ;IB= 0.75A VBE(sat) Base-Emitter Sa turation Voltage IC= 6A ;IB= 0.75A IC EO Collector Cutoff Current ICBO Col lector Cutoff Curr.





Part

BUX42

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·Low Collector Saturation Voltag e- : VCE(sat)= 1.2V (Max.)@IC= 4A ·Fas t Switching Speed ·Minimum Lot-to-Lot variations for robust device performanc e and reliable operation APPLICATIONS ·Designed for use in switching and lin ear applications in military and indust rial equipment. Absolute maximum ratin gs(Ta=25℃) SYMBOL PA.
Manufacture

INCHANGE

Datasheet
Download BUX42 Datasheet




 BUX42
isc Silicon NPN Power Transistor
DESCRIPTION
·Low Collector Saturation Voltage-
: VCE(sat)= 1.2V (Max.)@IC= 4A
·Fast Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in switching and linear applications in
military and industrial equipment.
Absolute maximum ratings(Ta=25)
SYMBOL
PARAMETER
VCEO
VCEX
VCBO
Collector-Emitter Voltage
Collector-Emitter Voltage
VBE= -1.5V
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
ICM
Collector Current-Peak
IB
Base Current-Continuous
PC
Collector Power Dissipation
@TC=25
Tj
Junction Temperature
Tstg
Storage Temperature Range
VALUE UNIT
250
V
300
V
300
V
7
V
12
A
15
A
2.4
A
120
W
200
-65~200
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 1.46 /W
BUX42
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




 BUX42
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA ; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50mA; IC= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 6A ;IB= 0.75A
VBE(sat) Base-Emitter Saturation Voltage
IC= 6A ;IB= 0.75A
ICEO
Collector Cutoff Current
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCE= 200V; IB= 0
VCB= 300V; IE= 0
VCB= 300V; IE= 0;TC=125
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 4A ; VCE= 4V
hFE-2
DC Current Gain
IC= 6A ; VCE= 4V
BUX42
MIN TYP. MAX UNIT
250
V
7
V
1.2
V
1.6
V
2.0
V
1.0 mA
1.0
5.0
mA
1
mA
15
45
8
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark








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