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NPN Transistor. BUX47 Datasheet

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NPN Transistor. BUX47 Datasheet
















BUX47 Transistor. Datasheet pdf. Equivalent













Part

BUX47

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor BUX47 DESCRIPTION ·Collector-Emitter Sustai ning Voltage- : VCEO(SUS)= 400V (Min) Fast Switching Speed ·Minimum Lot-to- Lot variations for robust device perfor mance and reliable operation APPLICATIO NS Designed for high voltage, fast swit ching applications. Absolute maximum r atings(Ta=25℃) SYMBOL PARAMETER VC ER VCES Collector-Emit.
Manufacture

INCHANGE

Datasheet
Download BUX47 Datasheet


INCHANGE BUX47

BUX47; ter Voltage (RBE= 10Ω) Collector-Emitte r Voltage (VBE= 0) VCEO Collector-Emi tter Voltage VEBO Emitter-Base Voltag e IC Collector Current-Continuous IC M Collector Current-Peak tp< 5ms IB Base Current-Continuous IBM Base Curr ent-peak tp< 5ms PC Collector Power D issipation @TC=25℃ Tj Junction Temp erature Tstg Storage Temperature Rang e VALUE UNIT 850 V.


INCHANGE BUX47

850 V 400 V 7 V 9 A 15 A 8 A 10 A 125 W 175 ℃ -65~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARA METER Rth j-c Thermal Resistance,Junct ion to Case MAX 1.2 UNIT ℃/W isc w ebsite:www.iscsemi.com 1 isc & iscse mi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARA CTERISTICS TC=25℃ unless otherwise sp ecified SYMBOL PARAMETER .


INCHANGE BUX47

CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 V(B R)EBO Emitter-Base Breakdown Voltage I E= 50mA; IC= 0 VCE(sat)-1 Collector-Em itter Saturation Voltage IC= 6A; IB= 1. 2A VCE(sat)-2 Collector-Emitter Satura tion Voltage IC= 9A; IB= 3A VBE(sat) B ase-Emitter Saturation Voltage ICBO C ollector Cutoff Current IEBO Emitter Cutoff Current IC.





Part

BUX47

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor BUX47 DESCRIPTION ·Collector-Emitter Sustai ning Voltage- : VCEO(SUS)= 400V (Min) Fast Switching Speed ·Minimum Lot-to- Lot variations for robust device perfor mance and reliable operation APPLICATIO NS Designed for high voltage, fast swit ching applications. Absolute maximum r atings(Ta=25℃) SYMBOL PARAMETER VC ER VCES Collector-Emit.
Manufacture

INCHANGE

Datasheet
Download BUX47 Datasheet




 BUX47
isc Silicon NPN Power Transistor
BUX47
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V (Min)
·Fast Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for high voltage, fast switching applications.
Absolute maximum ratings(Ta=25)
SYMBOL
PARAMETER
VCER
VCES
Collector-Emitter Voltage
(RBE= 10Ω)
Collector-Emitter Voltage
(VBE= 0)
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
ICM
Collector Current-Peak tp< 5ms
IB
Base Current-Continuous
IBM
Base Current-peak tp< 5ms
PC
Collector Power Dissipation
@TC=25
Tj
Junction Temperature
Tstg
Storage Temperature Range
VALUE UNIT
850
V
850
V
400
V
7
V
9
A
15
A
8
A
10
A
125
W
175
-65~175
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
1.2
UNIT
/W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




 BUX47
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50mA; IC= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 6A; IB= 1.2A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 9A; IB= 3A
VBE(sat) Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 6A; IB= 1.2A
VCB= 850V; IE= 0
VCB= 850V; IE= 0; TC=125
VEB= 5V; IC= 0
BUX47
MIN MAX UNIT
400
V
7
30
V
1.5
V
3.0
V
1.6
V
0.4
3
mA
1.0 mA
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark








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