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NPN Transistor. BUX48B Datasheet

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NPN Transistor. BUX48B Datasheet
















BUX48B Transistor. Datasheet pdf. Equivalent













Part

BUX48B

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor BUX48B DESCRIPTION ·Collector-Emitter Susta ining Voltage- : VCEO(SUS)= 600V (Min) ·High Current Capability ·Fast Switch ing Speed ·Minimum Lot-to-Lot variatio ns for robust device performance and re liable operation APPLICATIONS ·Designe d for switching and industrial applicat ions from single and three-phase mains. Absolute maximum rati.
Manufacture

INCHANGE

Datasheet
Download BUX48B Datasheet


INCHANGE BUX48B

BUX48B; ngs(Ta=25℃) SYMBOL PARAMETER VCER V CES Collector-Emitter Voltage (RBE= 10 Ω) Collector-Emitter Voltage (VBE= 0) VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Cu rrent-Continuous ICM Collector Curren t-Peak tp< 5ms IB Base Current-Contin uous IBM Base Current-peak tp< 5ms P C Collector Power Dissipation @TC=25 Tj Junction Tempera.


INCHANGE BUX48B

ture Tstg Storage Temperature Range V ALUE UNIT 1200 V 1200 V 600 V 7 V 15 A 30 A 4 A 20 A 175 W 150 ℃ -65~150 ℃ THERMAL CHARACTE RISTICS SYMBOL PARAMETER MAX UNIT R th j-c Thermal Resistance,Junction to C ase 1.0 ℃/W isc website:www.iscsem i.com 1 isc & iscsemi is registered tr ademark isc Silicon NPN Power Transist or ELECTRICAL CHARACTERIS.


INCHANGE BUX48B

TICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(S US) Collector-Emitter Sustaining Voltag e IC= 50mA; IB= 0 VCER(SUS) Collector -Emitter Sustaining Voltage IC= 0.5A; L= 2mH; Vclamp= 1200V RBE= 10Ω VCE(sa t)-1 Collector-Emitter Saturation Volta ge IC= 6A; IB= 1.5A VCE (sat)-2 Collec tor-Emitter Saturation Voltage IC= 10A; IB= 4A VBE(sat)-1 B.




Part

BUX48B

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor BUX48B DESCRIPTION ·Collector-Emitter Susta ining Voltage- : VCEO(SUS)= 600V (Min) ·High Current Capability ·Fast Switch ing Speed ·Minimum Lot-to-Lot variatio ns for robust device performance and re liable operation APPLICATIONS ·Designe d for switching and industrial applicat ions from single and three-phase mains. Absolute maximum rati.
Manufacture

INCHANGE

Datasheet
Download BUX48B Datasheet




 BUX48B
isc Silicon NPN Power Transistor
BUX48B
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 600V (Min)
·High Current Capability
·Fast Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for switching and industrial applications from
single and three-phase mains.
Absolute maximum ratings(Ta=25)
SYMBOL
PARAMETER
VCER
VCES
Collector-Emitter Voltage
(RBE= 10Ω)
Collector-Emitter Voltage
(VBE= 0)
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
ICM
Collector Current-Peak tp< 5ms
IB
Base Current-Continuous
IBM
Base Current-peak tp< 5ms
PC
Collector Power Dissipation
@TC=25
Tj
Junction Temperature
Tstg
Storage Temperature Range
VALUE UNIT
1200
V
1200
V
600
V
7
V
15
A
30
A
4
A
20
A
175
W
150
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 1.0 /W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




 BUX48B
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
VCER(SUS)
Collector-Emitter Sustaining Voltage
IC= 0.5A; L= 2mH; Vclamp= 1200V
RBE= 10Ω
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 6A; IB= 1.5A
VCE (sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 4A
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 6A; IB= 1.5A
VBE(sat)-2 Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
ICEO
Collector Cutoff Current
IC= 10A; IB= 4A
VCB= 1200V; IE= 0
VCB= 1200V; IE= 0; TC=125
VCE= 600V; IB= 0
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
BUX48B
MIN MAX UNIT
600
V
1200
V
1.5
V
3.0
V
1.5
V
2.0
V
0.5
3.0
mA
1.0 mA
1.0 mA
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark








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