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NPN Transistor. BUX48C Datasheet

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NPN Transistor. BUX48C Datasheet
















BUX48C Transistor. Datasheet pdf. Equivalent













Part

BUX48C

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·High Voltage Capability ·Fast Switching Speed ·Minimum Lot-to-Lot va riations for robust device performance and reliable operation APPLICATIONS · Designed for switching and industrial a pplications from single and three-phase mains. Absolute maximum ratings(Ta=25 ℃) SYMBOL PARAMETER VCER VCES Col lector-Emitter Voltage R.
Manufacture

INCHANGE

Datasheet
Download BUX48C Datasheet


INCHANGE BUX48C

BUX48C; BE= 10Ω Collector-Emitter Voltage VBE= 0 VCEO Collector-Emitter Voltage VEB O Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Curr ent-Peak tp<5ms ICP Collector Current -Peak tp<20μs IB Base Current-Contin uous IBM Base Current-peak PC Colle ctor Power Dissipation @TC=25℃ Tj J unction Temperature Tstg Storage Temp erature Range VALUE U.


INCHANGE BUX48C

NIT 1200 V 1200 V 700 V 7 V 15 A 30 A 55 A 4 A 20 A 175 W 200 ℃ -65~200 ℃ THERMAL CHARACTE RISTICS SYMBOL PARAMETER MAX UNIT R th j-c Thermal Resistance,Junction to C ase 1.0 ℃/W BUX48C isc website:ww w.iscsemi.com 1 isc & iscsemi is regis tered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise sp.


INCHANGE BUX48C

ecified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCBO(SUS) Coll ector-Emitter Sustaining Voltage IE= 1m A; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 6A; IB= 1.5A VC E(sat)-2 Collector-Emitter Saturation V oltage IC= 10A ;IB= 4A VBE(sat)-1 Base -Emitter Saturation Voltage IC= 6A; IB = 1.5A VBE(sat)-2.





Part

BUX48C

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·High Voltage Capability ·Fast Switching Speed ·Minimum Lot-to-Lot va riations for robust device performance and reliable operation APPLICATIONS · Designed for switching and industrial a pplications from single and three-phase mains. Absolute maximum ratings(Ta=25 ℃) SYMBOL PARAMETER VCER VCES Col lector-Emitter Voltage R.
Manufacture

INCHANGE

Datasheet
Download BUX48C Datasheet




 BUX48C
isc Silicon NPN Power Transistor
DESCRIPTION
·High Voltage Capability
·Fast Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for switching and industrial applications from
single and three-phase mains.
Absolute maximum ratings(Ta=25)
SYMBOL
PARAMETER
VCER
VCES
Collector-Emitter Voltage
RBE= 10Ω
Collector-Emitter Voltage
VBE= 0
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
ICM
Collector Current-Peak tp<5ms
ICP
Collector Current-Peak tp<20μs
IB
Base Current-Continuous
IBM
Base Current-peak
PC
Collector Power Dissipation
@TC=25
Tj
Junction Temperature
Tstg
Storage Temperature Range
VALUE UNIT
1200
V
1200
V
700
V
7
V
15
A
30
A
55
A
4
A
20
A
175
W
200
-65~200
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 1.0 /W
BUX48C
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




 BUX48C
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
VCBO(SUS) Collector-Emitter Sustaining Voltage IE= 1mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 6A; IB= 1.5A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A ;IB= 4A
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 6A; IB= 1.5A
VBE(sat)-2 Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
ICEO
Collector Cutoff Current
IC= 10A ;IB= 4A
VCB= 1200V; IE= 0
VCB= 1200V; IE= 0; TC=125
VCE= 700V; IB= 0
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
BUX48C
MIN MAX UNIT
700
V
1200
V
1.5
V
3.0
V
1.5
V
2.0
V
0.5
3
mA
1
mA
1
mA
NOTICE:
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark








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