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NPN Transistor. BUX81 Datasheet

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NPN Transistor. BUX81 Datasheet
















BUX81 Transistor. Datasheet pdf. Equivalent













Part

BUX81

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistors BUX81 DESCRIPTION ·Collector-Emitter Susta ining Voltage- : VCEO(SUS)= 450V(Min) High Switching Speed ·Minimum Lot-to- Lot variations for robust device perfor mance and reliable operation APPLICATIO NS ·Designed for switching-mode power supplies, CRT scanning, Inverters, and other industrial applications. ABSOLUT E MAXIMUM RATINGS(Ta=2.
Manufacture

INCHANGE

Datasheet
Download BUX81 Datasheet


INCHANGE BUX81

BUX81; 5℃) SYMBOL PARAMETER VALUE UNIT V CES Collector-Emitter Voltage VBE= 0 850 V VCEO Collector-Emitter Voltage 430 V VCER Collector-Emitter Volta ge RBE= 50Ω 500 V VEBO Emitter-Bas e Voltage 10 V IC Collector Current -Continuous 10 A ICM Collector Curr ent-Peak 15 A IB Base Current-Conti nuous 5 A PC Collector Power Dissip ation @TC=25℃ 150 W .


INCHANGE BUX81

TJ Junction Temperature 150 ℃ Tst g Storage Temperature -65~150 ℃ TH ERMAL CHARACTERISTICS SYMBOL PARAMETE R Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.1 ℃/W isc websit e:www.iscsemi.com 1 isc & iscsemi is registered trademarkk isc Silicon NPN Power Transistors ELECTRICAL CHARACTE RISTICS TC=25℃ unless otherwise speci fied SYMBOL PARAMETER CON.


INCHANGE BUX81

DITIONS VCEO(SUS) Collector-Emitter Sus taining Voltage IC= 50mA; IB= 0 VCE(sa t)-1 Collector-Emitter Saturation Volta ge IC= 5A; IB= 1A VCE(sat)-2 Collector -Emitter Saturation Voltage IC= 8A; IB= 2.5A VBE(sat)-1 Base-Emitter Saturati on Voltage IC= 5A; IB= 1A VBE(sat)-2 Base-Emitter Saturation Voltage ICBO Collector Cutoff Current IEBO Emitter Cutoff Current I.




Part

BUX81

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistors BUX81 DESCRIPTION ·Collector-Emitter Susta ining Voltage- : VCEO(SUS)= 450V(Min) High Switching Speed ·Minimum Lot-to- Lot variations for robust device perfor mance and reliable operation APPLICATIO NS ·Designed for switching-mode power supplies, CRT scanning, Inverters, and other industrial applications. ABSOLUT E MAXIMUM RATINGS(Ta=2.
Manufacture

INCHANGE

Datasheet
Download BUX81 Datasheet




 BUX81
isc Silicon NPN Power Transistors
BUX81
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 450V(Min)
·High Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for switching-mode power supplies, CRT scanning,
Inverters, and other industrial applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage VBE= 0
850
V
VCEO
Collector-Emitter Voltage
430
V
VCER
Collector-Emitter Voltage RBE= 50Ω
500
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
15
A
IB
Base Current-Continuous
5
A
PC
Collector Power Dissipation @TC=25150
W
TJ
Junction Temperature
150
Tstg
Storage Temperature
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.1 /W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademarkk




 BUX81
isc Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 1A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 2.5A
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 5A; IB= 1A
VBE(sat)-2 Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 8A; IB= 2.5A
VCB=1000V; IE= 0
VCB=1000V; IE= 0,TC=125
VEB= 10V; IC= 0
hFE
DC Current Gain
IC= 1.2A; VCE= 5V
BUX81
MIN TYP. MAX UNIT
450
V
1.5
V
3.0
V
1.4
V
1.8
V
1.0
3.0
mA
10 mA
20
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark








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