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NPN Transistor. BUX84F Datasheet

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NPN Transistor. BUX84F Datasheet
















BUX84F Transistor. Datasheet pdf. Equivalent













Part

BUX84F

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor BUX84F DESCRIPTION ·Collector-Emitter Susta ining Voltage- : VCEO(SUS)= 400V(Min.) ·High Speed Switching ·Minimum Lot-to -Lot variations for robust device perfo rmance and reliable operation APPLICATI ONS ·Designed for use in high-voltage, high-speed,power switching regulators,c onverters,inverters,motor control syste m. ABSOLUTE MAXIMUM R.
Manufacture

INCHANGE

Datasheet
Download BUX84F Datasheet


INCHANGE BUX84F

BUX84F; ATINGS (Ta=25℃) SYMBOL PARAMETER VA LUE UNIT VCES Collector-Emitter Volt age 800 V VCEO Collector-Emitter Vo ltage 400 V VEBO Emitter-Base Volta ge 10 V IC Collector Current-Contin uous 2 A ICM Collector Current-Peak 3 A IB Base Current 0.75 A IBM Base Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Te mperature 1 A 18 W.


INCHANGE BUX84F

150 ℃ Tstg Storage Temperature Ra nge -65~150 ℃ THERMAL CHARACTERISTI CS SYMBOL PARAMETER MAX UNIT Rth j- c Thermal Resistance,Junction to Case 7 .2 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered tradema rk isc Silicon NPN Power Transistor B UX84F ELECTRICAL CHARACTERISTICS TC=25 ℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN .


INCHANGE BUX84F

TYP. MAX UNIT V(BR)CEO Collector-Emitte r Breakdown Voltage IC= 50mA; IB= 0 40 0 V VCE(sat)-1 Collector-Emitter Satu ration Voltage IC= 0.3A; IB= 0.03A 0.8 V VCE(sat)-2 Collector-Emitter Satur ation Voltage IC= 1A; IB= 0.2A 1.0 V VBE(sat) Base-Emitter Saturation Volta ge ICBO Collector Cutoff Current IEB O Emitter Cutoff Current IC= 1A; IB= 0.2A VCB= 800V; IE.





Part

BUX84F

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor BUX84F DESCRIPTION ·Collector-Emitter Susta ining Voltage- : VCEO(SUS)= 400V(Min.) ·High Speed Switching ·Minimum Lot-to -Lot variations for robust device perfo rmance and reliable operation APPLICATI ONS ·Designed for use in high-voltage, high-speed,power switching regulators,c onverters,inverters,motor control syste m. ABSOLUTE MAXIMUM R.
Manufacture

INCHANGE

Datasheet
Download BUX84F Datasheet




 BUX84F
isc Silicon NPN Power Transistor
BUX84F
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V(Min.)
·High Speed Switching
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in high-voltage,high-speed,power switching
regulators,converters,inverters,motor control system.
ABSOLUTE MAXIMUM RATINGS (Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage
800
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current-Continuous
2
A
ICM
Collector Current-Peak
3
A
IB
Base Current
0.75
A
IBM
Base Current-Peak
PC
Collector Power Dissipation
@TC=25
Tj
Junction Temperature
1
A
18
W
150
Tstg
Storage Temperature Range
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 7.2 /W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




 BUX84F
isc Silicon NPN Power Transistor
BUX84F
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0
400
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 0.3A; IB= 0.03A
0.8
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A
1.0
V
VBE(sat) Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 1A; IB= 0.2A
VCB= 800V; IE= 0
VCB= 800V; IE= 0;TC=125
VEB= 5V; IC= 0
1.1
V
0.2
1.5
mA
1.0 mA
hFE-1
DC Current Gain
IC= 0.1A; VCE= 5V
20
100
hFE-2
DC Current Gain
IC= 0.5A; VCE= 5V
15
fT
Current-Gain—Bandwidth Product
IC= 0.2A; VCE= 10V, ftest= 1MHz
20
MHz
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark








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