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NPN Transistor. BUY18S Datasheet

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NPN Transistor. BUY18S Datasheet
















BUY18S Transistor. Datasheet pdf. Equivalent













Part

BUY18S

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor BUY18S DESCRIPTION · ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(MI N) ·Low Collector Saturation Voltage- : VCE(sat)= 1.0V@ IC= 5A ·Minimum L ot-to-Lot variations for robust device performance and reliable operation AP PLICATIONS ·Designed for use switching and general purpose applications. ABS OLUTE MAXIMUM RATINGS(T.
Manufacture

INCHANGE

Datasheet
Download BUY18S Datasheet


INCHANGE BUY18S

BUY18S; a=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 400 V V CEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PC Colle ctor Power Dissipation @TC<75℃ Tj Junction Temperature 7 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT.


INCHANGE BUY18S

Rth j-c Thermal Resistance, Junction t o Case 2.08 ℃/W isc website:www.is csemi.com 1 isc & iscsemi is registere d trademark isc Silicon NPN Power Tran sistor ELECTRICAL CHARACTERISTICS TC=2 5℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Colle ctor-Emitter Breakdown Voltage IC= 50mA ; IB= 0 V(BR)CBO Collector-Base Breakd own Voltage IC= 1mA; IE.


INCHANGE BUY18S

= 0 V(BR)EBO Emitter-Base Breakdown Vol tage IE= 1m A; IC= 0 VCE(sat) Collect or-Emitter Saturation Voltage IC= 5A; I B= 0.5A VBE(sat) Base-Emitter Saturati on Voltage IC= 5A; IB= 0.5A ICBO Col lector Cutoff Current VCB=400V; IE= 0 hFE DC Current Gain IC= 1A ; VCE= 5V fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 5V BUY18S MIN TYP. MA X UNIT 200 V 400 .





Part

BUY18S

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor BUY18S DESCRIPTION · ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(MI N) ·Low Collector Saturation Voltage- : VCE(sat)= 1.0V@ IC= 5A ·Minimum L ot-to-Lot variations for robust device performance and reliable operation AP PLICATIONS ·Designed for use switching and general purpose applications. ABS OLUTE MAXIMUM RATINGS(T.
Manufacture

INCHANGE

Datasheet
Download BUY18S Datasheet




 BUY18S
isc Silicon NPN Power Transistor
BUY18S
DESCRIPTION
·
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V(MIN)
·Low Collector Saturation Voltage-
: VCE(sat)= 1.0V@ IC= 5A
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use switching and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
MAX
UNIT
VCBO
Collector-Base Voltage
400
V
VCEO
Collector-Emitter Voltage
200
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation
@TC75
Tj
Junction Temperature
7
A
50
W
150
Tstg
Storage Temperature Range
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case 2.08 /W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




 BUY18S
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1m A; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB= 0.5A
ICBO
Collector Cutoff Current
VCB=400V; IE= 0
hFE
DC Current Gain
IC= 1A ; VCE= 5V
fT
Current-Gain—Bandwidth Product
IC= 0.5A; VCE= 5V
BUY18S
MIN TYP. MAX UNIT
200
V
400
V
6
V
1.0
V
1.2
V
10 μA
20
50
MHz
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark








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