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NPN Transistor. 2N3879 Datasheet

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NPN Transistor. 2N3879 Datasheet
















2N3879 Transistor. Datasheet pdf. Equivalent













Part

2N3879

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·Excellent Safe Operating Area Low Collector-Emitter Saturation Volta ge ·100% avalanche tested ·Minimum Lo t-to-Lot variations for robust device p erformance and reliable operation. APP LICATIONS ·Designed for high speed swi tching and linear- amplifier applicatio ns. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALU.
Manufacture

INCHANGE

Datasheet
Download 2N3879 Datasheet


INCHANGE 2N3879

2N3879; E UNIT VCBO Collector-Base Voltage 1 20 V VCEO Collector-Emitter Voltage 75 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7 A PC Collector Power Dissipation@TC= 25℃ 35 W TJ Junction Temperature -65~200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Res istance,Junction to Case.


INCHANGE 2N3879

MAX UNIT 5 ℃/W 2N3879 isc websit e:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERI STICS TC=25℃ unless otherwise specifi ed SYMBOL PARAMETER CONDITIONS VCEO (SUS)* Collector-Emitter Sustaining Vol tage IC=200mA; IB= 0 IEBO Emitter Cut off Current VEB= 7V; IC= 0 VCE(sat) C ollector-Emitter Saturat.


INCHANGE 2N3879

ion Voltage IC= 4A; IB= 0.4A VBE(sat) B ase-Emitter Saturation Voltage IC= 4A; IB= 0.4A hFE-1* DC Current Gain IC= 4A; VCE= 2V hFE-2* DC Current Gain IC= 4A; VCE= 5V hFE-3* DC Current Gai n *:Pulse test:Pulse width=300us,duty cycle≤2% IC= 0.5A; VCE= 5V 2N3879 MIN MAX UNIT 75 V 10 mA 1.2 V 2. 0 V 12 100 20 80 40 NOTICE: ISC reserves the rights t.





Part

2N3879

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·Excellent Safe Operating Area Low Collector-Emitter Saturation Volta ge ·100% avalanche tested ·Minimum Lo t-to-Lot variations for robust device p erformance and reliable operation. APP LICATIONS ·Designed for high speed swi tching and linear- amplifier applicatio ns. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALU.
Manufacture

INCHANGE

Datasheet
Download 2N3879 Datasheet




 2N3879
isc Silicon NPN Power Transistor
DESCRIPTION
·Excellent Safe Operating Area
·Low Collector-Emitter Saturation Voltage
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation.
APPLICATIONS
·Designed for high speed switching and linear- amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
75
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
7
A
PC
Collector Power Dissipation@TC=25
35
W
TJ
Junction Temperature
-65~200
Tstg
Storage Temperature
-65~200
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
5
/W
2N3879
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




 2N3879
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)* Collector-Emitter Sustaining Voltage IC=200mA; IB= 0
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A
VBE(sat) Base-Emitter Saturation Voltage
IC= 4A; IB= 0.4A
hFE-1*
DC Current Gain
IC= 4A; VCE= 2V
hFE-2*
DC Current Gain
IC= 4A; VCE= 5V
hFE-3*
DC Current Gain
*:Pulse test:Pulse width=300us,duty cycle≤2%
IC= 0.5A; VCE= 5V
2N3879
MIN MAX UNIT
75
V
10
mA
1.2
V
2.0
V
12 100
20
80
40
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark








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