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NPN Transistor. 2N4070 Datasheet

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NPN Transistor. 2N4070 Datasheet
















2N4070 Transistor. Datasheet pdf. Equivalent













Part

2N4070

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·Excellent Safe Operating Area Low Collector-Emitter Saturation Volta ge ·100% avalanche tested ·Minimum Lo t-to-Lot variations for robust device p erformance and reliable operation. APP LICATIONS ·Designed for general-purpos e switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SY MBOL PARAMETER VALUE U.
Manufacture

INCHANGE

Datasheet
Download 2N4070 Datasheet


INCHANGE 2N4070

2N4070; NIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 10 A PC Collector Power Dissipation@TC=25 ℃ 65 W TJ Operating Temperature R ange -65~+150 ℃ Tstg Storage Junct ion Temperature Range -65~+200 ℃ THE RMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resist.


INCHANGE 2N4070

ance,Junction to Case MAX UNIT 1.5 ℃/ W 2N4070 isc website:www.iscsemi.co m 1 isc & iscsemi is registered tradem ark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ un less otherwise specified SYMBOL PARAM ETER CONDITIONS VCEO(SUS) * Collector -Emitter Sustaining Voltage IC=100mA ; IB=0 VCE(sat) Collector-Emitter Satura tion Voltage IC= 5A; IB=.


INCHANGE 2N4070

0.5A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A ICEO Collec tor Cutoff Current VCE= 100V; IB=0 IE BO Emitter Cutoff Current VEB= 8.0V; IC=0 hFE DC Current Gain IC= 5A ; VC E= 5V fT Current Gain-Bandwidth Produ ct *:Pulse test:Pulse width=300us,duty cycle≤2% IC= 0.2A ; VCE= 10V;f=1.0M Hz 2N4070 MIN MAX UNIT 100 V 0.6 V 1.5 V 0.25 mA .




Part

2N4070

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·Excellent Safe Operating Area Low Collector-Emitter Saturation Volta ge ·100% avalanche tested ·Minimum Lo t-to-Lot variations for robust device p erformance and reliable operation. APP LICATIONS ·Designed for general-purpos e switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SY MBOL PARAMETER VALUE U.
Manufacture

INCHANGE

Datasheet
Download 2N4070 Datasheet




 2N4070
isc Silicon NPN Power Transistor
DESCRIPTION
·Excellent Safe Operating Area
·Low Collector-Emitter Saturation Voltage
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation.
APPLICATIONS
·Designed for general-purpose switching and amplifier
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
10
A
PC
Collector Power Dissipation@TC=25
65
W
TJ
Operating Temperature Range
-65~+150
Tstg
Storage Junction Temperature Range -65~+200
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.5 /W
2N4070
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




 2N4070
isc Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) * Collector-Emitter Sustaining Voltage IC=100mA ; IB=0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB= 0.5A
ICEO
Collector Cutoff Current
VCE= 100V; IB=0
IEBO
Emitter Cutoff Current
VEB= 8.0V; IC=0
hFE
DC Current Gain
IC= 5A ; VCE= 5V
fT
Current Gain-Bandwidth Product
*:Pulse test:Pulse width=300us,duty cycle≤2%
IC= 0.2A ; VCE= 10V;f=1.0MHz
2N4070
MIN MAX UNIT
100
V
0.6
V
1.5
V
0.25 mA
5.0 mA
40 120
20
MHz
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark








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