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NPN Transistor. 2N4231 Datasheet

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NPN Transistor. 2N4231 Datasheet
















2N4231 Transistor. Datasheet pdf. Equivalent













Part

2N4231

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·Excellent Safe Operating Area Low Collector-Emitter Saturation Volta ge ·100% avalanche tested ·Minimum Lo t-to-Lot variations for robust device p erformance and reliable operation. APP LICATIONS ·Designed for general-purpos e power amplifier and switching applica tions ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VA.
Manufacture

INCHANGE

Datasheet
Download 2N4231 Datasheet


INCHANGE 2N4231

2N4231; LUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A PC Collector Power Dissipation@TC =25℃ 35 W TJ Junction Temperature -65~200 ℃ Tstg Storage Temperatur e -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Re sistance,Junction to Cas.


INCHANGE 2N4231

e MAX UNIT 5.7 ℃/W 2N4231 isc web site:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon N PN Power Transistor ELECTRICAL CHARACT ERISTICS TC=25℃ unless otherwise spec ified SYMBOL PARAMETER CONDITIONS V CEO(SUS)* Collector-Emitter Sustaining Voltage IC=100mA; IB= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 VCE(sat ) Collector-Emitter Satu.


INCHANGE 2N4231

ration Voltage IC= 1.5A; IB= 0.15A VBE( ON) Base-Emitter On Voltage IC=1.5A;VC E= 2V hFE-1* DC Current Gain IC= 1.5 A; VCE= 2V hFE-2* DC Current Gain *: Pulse test:Pulse width=300us,duty cycle ≤2% IC= 3A; VCE= 2V 2N4231 MIN MAX UNIT 40 V 0.5 mA 0.7 V 1.4 V 2 5 100 10 NOTICE: ISC reserves the r ights to make changes of the content he rein the datasheet at .




Part

2N4231

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·Excellent Safe Operating Area Low Collector-Emitter Saturation Volta ge ·100% avalanche tested ·Minimum Lo t-to-Lot variations for robust device p erformance and reliable operation. APP LICATIONS ·Designed for general-purpos e power amplifier and switching applica tions ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VA.
Manufacture

INCHANGE

Datasheet
Download 2N4231 Datasheet




 2N4231
isc Silicon NPN Power Transistor
DESCRIPTION
·Excellent Safe Operating Area
·Low Collector-Emitter Saturation Voltage
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation.
APPLICATIONS
·Designed for general-purpose power amplifier and switching
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
50
V
VCEO
Collector-Emitter Voltage
40
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
5
A
PC
Collector Power Dissipation@TC=25
35
W
TJ
Junction Temperature
-65~200
Tstg
Storage Temperature
-65~200
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
5.7
/W
2N4231
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




 2N4231
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)* Collector-Emitter Sustaining Voltage IC=100mA; IB= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.15A
VBE(ON) Base-Emitter On Voltage
IC=1.5A;VCE= 2V
hFE-1*
DC Current Gain
IC= 1.5A; VCE= 2V
hFE-2*
DC Current Gain
*:Pulse test:Pulse width=300us,duty cycle≤2%
IC= 3A; VCE= 2V
2N4231
MIN MAX UNIT
40
V
0.5 mA
0.7
V
1.4
V
25 100
10
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark








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