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NPN Transistor. 2N4232A Datasheet

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NPN Transistor. 2N4232A Datasheet
















2N4232A Transistor. Datasheet pdf. Equivalent













Part

2N4232A

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·Excellent Safe Operating Area Low Collector-Emitter Saturation Volta ge ·100% avalanche tested ·Minimum Lo t-to-Lot variations for robust device p erformance and reliable operation. APP LICATIONS ·Designed for general-purpos e power amplifier and switching applica tions ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VA.
Manufacture

INCHANGE

Datasheet
Download 2N4232A Datasheet


INCHANGE 2N4232A

2N4232A; LUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A PC Collector Power Dissipation@TC =25℃ 75 W TJ Junction Temperature -65~200 ℃ Tstg Storage Temperatur e -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Re sistance,Junction to Cas.


INCHANGE 2N4232A

e MAX UNIT 2.32 ℃/W 2N4232A isc web site:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon N PN Power Transistor ELECTRICAL CHARACT ERISTICS TC=25℃ unless otherwise spec ified SYMBOL PARAMETER CONDITIONS V CEO(SUS)* Collector-Emitter Sustaining Voltage IC=100mA; IB= 0 ICEO Collecto r Cutoff Current VCE=50V;IB= 0 ICEX Collector-Emitter Leakag.


INCHANGE 2N4232A

e current VCE=60V,VBE(OFF)=1.5V ICBO Collector Cutoff Current VCE=60V;IB= 0 IEBO Emitter Cutoff Current VEB= 5V ; IC= 0 VCE(sat)-1* Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.15A VCE(sat)-2* Collector-Emitter Saturati on Voltage IC= 3A; IB= 0.3A VCE(sat)-3 * Collector-Emitter Saturation Voltage IC= 5A; IB=1.25A VBE(ON)* Base-Emitter On Voltage IC=1..




Part

2N4232A

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·Excellent Safe Operating Area Low Collector-Emitter Saturation Volta ge ·100% avalanche tested ·Minimum Lo t-to-Lot variations for robust device p erformance and reliable operation. APP LICATIONS ·Designed for general-purpos e power amplifier and switching applica tions ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VA.
Manufacture

INCHANGE

Datasheet
Download 2N4232A Datasheet




 2N4232A
isc Silicon NPN Power Transistor
DESCRIPTION
·Excellent Safe Operating Area
·Low Collector-Emitter Saturation Voltage
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation.
APPLICATIONS
·Designed for general-purpose power amplifier and switching
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
5
A
PC
Collector Power Dissipation@TC=25
75
W
TJ
Junction Temperature
-65~200
Tstg
Storage Temperature
-65~200
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
2.32 /W
2N4232A
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




 2N4232A
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)* Collector-Emitter Sustaining Voltage IC=100mA; IB= 0
ICEO
Collector Cutoff Current
VCE=50V;IB= 0
ICEX
Collector-Emitter Leakage current
VCE=60V,VBE(OFF)=1.5V
ICBO
Collector Cutoff Current
VCE=60V;IB= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
VCE(sat)-1* Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.15A
VCE(sat)-2* Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A
VCE(sat)-3* Collector-Emitter Saturation Voltage IC= 5A; IB=1.25A
VBE(ON)* Base-Emitter On Voltage
IC=1.5A;VCE= 2V
hFE-1*
DC Current Gain
IC= 0.5A; VCE= 2V
hFE-2*
DC Current Gain
IC= 1.5A; VCE= 2V
hFE-3*
DC Current Gain
IC= 3A; VCE= 2V
hFE-4*
DC Current Gain
*:Pulse test:Pulse width=300us,duty cycle≤2%
IC= 5A; VCE= 4V
2N4232A
MIN MAX UNIT
60
V
1
mA
0.1 mA
50
uA
0.5 mA
0.7
V
2.0
V
4
V
1.4
V
40
25 100
10
4
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark




 2N4232A
isc Silicon NPN Power Transistor
2N4232A
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
3 isc & iscsemi is registered trademark




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