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NPN Transistor. 2N4298 Datasheet

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NPN Transistor. 2N4298 Datasheet
















2N4298 Transistor. Datasheet pdf. Equivalent













Part

2N4298

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·Excellent Safe Operating Area Low Collector-Emitter Saturation Volta ge ·100% avalanche tested ·Minimum Lo t-to-Lot variations for robust device p erformance and reliable operation. APP LICATIONS ·Designed for switching regu lator applications where high frequency and high voltage swings and required ABSOLUTE MAXIMUM RATING.
Manufacture

INCHANGE

Datasheet
Download 2N4298 Datasheet


INCHANGE 2N4298

2N4298; S(Ta=25℃) SYMBOL PARAMETER VALUE U NIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 35 0 V VEBO Emitter-Base Voltage 4 V IC Collector Current-Continuous 1 A PC Collector Power Dissipation@TC=25 ℃ 20 W TJ Junction Temperature - 65~175 ℃ Tstg Storage Temperature -65~175 ℃ THERMAL CHARACTERISTICS S YMBOL PARAMETER Rth j-c .


INCHANGE 2N4298

Thermal Resistance,Junction to Case MAX UNIT 7.5 ℃/W 2N4298 isc website www.iscsemi.com 1 isc & iscsemi is r egistered trademark isc Silicon NPN Po wer Transistor ELECTRICAL CHARACTERIST ICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(S US)* Collector-Emitter Sustaining Volta ge IC=50mA; IB= 0 ICBO Collector Cuto ff Current VCE=500V;IB=.


INCHANGE 2N4298

0 IEBO Emitter Cutoff Current VEB= 4 V; IC= 0 VCE(sat)* Collector-Emitter S aturation Voltage IC= 50mA; IB= 5mA VB E(sat)* Base-Emitter Saturation Voltage IC=50mA; IB= 5mA VBE(ON)* Base-Emitt er On Voltage IC=0.1A;VCE= 10V hFE-1* DC Current Gain IC= 5mA; VCE= 10V h FE-2* DC Current Gain IC= 50mA; VCE= 10V hFE-3* DC Current Gain *:Pulse t est:Pulse width=30.





Part

2N4298

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·Excellent Safe Operating Area Low Collector-Emitter Saturation Volta ge ·100% avalanche tested ·Minimum Lo t-to-Lot variations for robust device p erformance and reliable operation. APP LICATIONS ·Designed for switching regu lator applications where high frequency and high voltage swings and required ABSOLUTE MAXIMUM RATING.
Manufacture

INCHANGE

Datasheet
Download 2N4298 Datasheet




 2N4298
isc Silicon NPN Power Transistor
DESCRIPTION
·Excellent Safe Operating Area
·Low Collector-Emitter Saturation Voltage
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation.
APPLICATIONS
·Designed for switching regulator applications where high
frequency and high voltage swings and required
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
500
V
VCEO
Collector-Emitter Voltage
350
V
VEBO
Emitter-Base Voltage
4
V
IC
Collector Current-Continuous
1
A
PC
Collector Power Dissipation@TC=25
20
W
TJ
Junction Temperature
-65~175
Tstg
Storage Temperature
-65~175
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
7.5
/W
2N4298
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




 2N4298
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)* Collector-Emitter Sustaining Voltage IC=50mA; IB= 0
ICBO
Collector Cutoff Current
VCE=500V;IB= 0
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
VCE(sat)* Collector-Emitter Saturation Voltage IC= 50mA; IB= 5mA
VBE(sat)* Base-Emitter Saturation Voltage
IC=50mA; IB= 5mA
VBE(ON)* Base-Emitter On Voltage
IC=0.1A;VCE= 10V
hFE-1*
DC Current Gain
IC= 5mA; VCE= 10V
hFE-2*
DC Current Gain
IC= 50mA; VCE= 10V
hFE-3*
DC Current Gain
*:Pulse test:Pulse width=300us,duty cycle≤2%
IC= 0.1A; VCE= 10V
2N4298
MIN MAX UNIT
350
V
0.1 mA
0.1 mA
0.9
V
1.5
V
0.9
V
20
25
75
20
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark








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