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NPN Transistor. 2N5297 Datasheet

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NPN Transistor. 2N5297 Datasheet
















2N5297 Transistor. Datasheet pdf. Equivalent













Part

2N5297

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor 2N5297 DESCRIPTION ·Collector-Emitter Susta ining Voltage- : VCEO(SUS) = 60V(Min) Collector-Emitter Saturation Voltage- : VCE(sat) = 1.0V(Max)@ IC= 1.5A, IB= 0 .15A ·Wide Area of Safe Operation ·10 0% avalanche tested ·Minimum Lot-to-Lo t variations for robust device performa nce and reliable operation APPLICATION S ·Designed for medium .
Manufacture

INCHANGE

Datasheet
Download 2N5297 Datasheet


INCHANGE 2N5297

2N5297; power switching amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SY MBOL PARAMETER VALUE UNIT VCBO Col lector-Base Voltage 80 V VCEO Colle ctor-Emitter Voltage 60 V VEBO Emit ter-Base Voltage 7 V IC Collector C urrent-Continuous 4.0 A IB Base Cur rent PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2. 0 A 36 W 150 ℃ T.


INCHANGE 2N5297

stg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL P ARAMETER Rth j-c Thermal Resistance, J unction to Case MAX UNIT 3.47 ℃/W i sc website:www.iscsemi.com 1 isc & i scsemi is registered trademark isc Sil icon NPN Power Transistor INCHANGE Sem iconductor 2N5297 ELECTRICAL CHARACTER ISTICS TC=25℃ unless otherwise specif ied SYMBOL PARAMETER CO.


INCHANGE 2N5297

NDITIONS VCEO(SUS) Collector-Emitter Su staining Voltage IC=30mA ;IB= 0 VCE(sa t) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A VBE(on) Base-Emitter On Voltage IC= 1A; VCE= 4V IEBO Emi tter Cutoff Current VEB= 5V; IC= 0 hF E DC Current Gain IC= 1.5A; VCE= 4V fT Current-Gain—Bandwidth Product IC = 0.2A; VCE= 4V Switching Times ton Turn-On Time toff .




Part

2N5297

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor 2N5297 DESCRIPTION ·Collector-Emitter Susta ining Voltage- : VCEO(SUS) = 60V(Min) Collector-Emitter Saturation Voltage- : VCE(sat) = 1.0V(Max)@ IC= 1.5A, IB= 0 .15A ·Wide Area of Safe Operation ·10 0% avalanche tested ·Minimum Lot-to-Lo t variations for robust device performa nce and reliable operation APPLICATION S ·Designed for medium .
Manufacture

INCHANGE

Datasheet
Download 2N5297 Datasheet




 2N5297
isc Silicon NPN Power Transistor
2N5297
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 60V(Min)
·Collector-Emitter Saturation Voltage-
: VCE(sat) = 1.0V(Max)@ IC= 1.5A, IB= 0.15A
·Wide Area of Safe Operation
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for medium power switching amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
4.0
A
IB
Base Current
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
2.0
A
36
W
150
Tstg
Storage Temperature Range
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
3.47 /W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




 2N5297
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2N5297
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC=30mA ;IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A
VBE(on) Base-Emitter On Voltage
IC= 1A; VCE= 4V
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 1.5A; VCE= 4V
fT
Current-Gain—Bandwidth Product IC= 0.2A; VCE= 4V
Switching Times
ton
Turn-On Time
toff
Turn-Off Time
IC= 1A; IB= 0.1A; VCC= 30V
MIN MAX UNIT
60
V
1.0
V
1.3
V
1.0
mA
20
80
0.8
MHz
5.0
μs
15
μs
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark








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