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NPN Transistor. 2N5467 Datasheet

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NPN Transistor. 2N5467 Datasheet
















2N5467 Transistor. Datasheet pdf. Equivalent













Part

2N5467

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·Excellent Safe Operating Area Low Collector-Emitter Saturation Volta ge ·The device employs the popular JED EC TO-3 ·100% avalanche tested ·Minim um Lot-to-Lot variations for robust dev ice performance and reliable operation. APPLICATIONS ·High voltage high curr ent power transistors ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL.
Manufacture

INCHANGE

Datasheet
Download 2N5467 Datasheet


INCHANGE 2N5467

2N5467; PARAMETER VALUE UNIT VCBO VCEO VEBO IC PC TJ Tstg Collector-Base Voltage 700 V Collector-Emitter Voltage 400 V Emitter-Base Voltage 7 V Collec tor Current-Continuous 3 A Collector Power Dissipation@TC=25℃ 140 W Jun ction Temperature 150 ℃ Storage Te mperature -65~200 ℃ THERMAL CHARACT ERISTICS SYMBOL PARAMETER Rth j-c Th ermal Resistance,Junctio.


INCHANGE 2N5467

n to Case MAX UNIT 1.48 ℃/W 2N5467 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Si licon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwi se specified SYMBOL PARAMETER CONDIT IONS VCEO(SUS)* Collector-Emitter Sust aining Voltage IC=200mA; IB= 0 ICBO C ollector Cutoff Current VCB=700V;IB= 0 IEBO Emitter Cutoff C.


INCHANGE 2N5467

urrent VEB=5V; IC= 0 hFE-1 DC Current Gain IC=1A; VCE= 4V hFE-2 DC Curren t Gain IC=2A; VCE= 4V VCE(sat) Collec tor-Emitter Saturation Voltage IC= 2A; IB= 0.4A VBE(sat) Base-Emitter Saturat ion Voltage *:Pulse test:Pulse width=30 0us,duty cycle≤2% IC= 2A; IB= 0.4A 2N5467 MIN MAX UNIT 400 V 1 mA 0. 1 mA 15 45 8 2.0 V 2.0 V NOTICE : ISC reserves the r.





Part

2N5467

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·Excellent Safe Operating Area Low Collector-Emitter Saturation Volta ge ·The device employs the popular JED EC TO-3 ·100% avalanche tested ·Minim um Lot-to-Lot variations for robust dev ice performance and reliable operation. APPLICATIONS ·High voltage high curr ent power transistors ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL.
Manufacture

INCHANGE

Datasheet
Download 2N5467 Datasheet




 2N5467
isc Silicon NPN Power Transistor
DESCRIPTION
·Excellent Safe Operating Area
·Low Collector-Emitter Saturation Voltage
·The device employs the popular JEDEC TO-3
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation.
APPLICATIONS
·High voltage high current power transistors
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Collector-Base Voltage
700
V
Collector-Emitter Voltage
400
V
Emitter-Base Voltage
7
V
Collector Current-Continuous
3
A
Collector Power Dissipation@TC=25140
W
Junction Temperature
150
Storage Temperature
-65~200
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.48 /W
2N5467
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




 2N5467
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)* Collector-Emitter Sustaining Voltage IC=200mA; IB= 0
ICBO
Collector Cutoff Current
VCB=700V;IB= 0
IEBO
Emitter Cutoff Current
VEB=5V; IC= 0
hFE-1
DC Current Gain
IC=1A; VCE= 4V
hFE-2
DC Current Gain
IC=2A; VCE= 4V
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A
VBE(sat) Base-Emitter Saturation Voltage
*:Pulse test:Pulse width=300us,duty cycle≤2%
IC= 2A; IB= 0.4A
2N5467
MIN MAX UNIT
400
V
1
mA
0.1 mA
15
45
8
2.0
V
2.0
V
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark








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