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NPN Transistor. 2N5468 Datasheet

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NPN Transistor. 2N5468 Datasheet
















2N5468 Transistor. Datasheet pdf. Equivalent













Part

2N5468

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·Excellent Safe Operating Area Low Collector-Emitter Saturation Volta ge ·The device employs the popular TO- 66 ·100% avalanche tested ·Minimum Lo t-to-Lot variations for robust device p erformance and reliable operation. APP LICATIONS ·High voltage high current p ower transistors ABSOLUTE MAXIMUM RATI NGS(Ta=25℃) SYMBOL PAR.
Manufacture

INCHANGE

Datasheet
Download 2N5468 Datasheet


INCHANGE 2N5468

2N5468; AMETER VALUE UNIT VCBO VCEO VEBO IC P C TJ Tstg Collector-Base Voltage 500 V Collector-Emitter Voltage 400 V Emitter-Base Voltage 7 V Collector C urrent-Continuous 3 A Collector Powe r Dissipation@TC=25℃ 70 W Junction Temperature 150 ℃ Storage Tempera ture -65~200 ℃ THERMAL CHARACTERIST ICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to .


INCHANGE 2N5468

Case MAX UNIT 2.5 ℃/W 2N5468 isc website:www.iscsemi.com 1 isc & iscs emi is registered trademark isc Silico n NPN Power Transistor ELECTRICAL CHAR ACTERISTICS TC=25℃ unless otherwise s pecified SYMBOL PARAMETER CONDITIONS VCEO(SUS)* Collector-Emitter Sustaini ng Voltage IC=200mA; IB= 0 ICBO Colle ctor Cutoff Current VCB=500V;IB= 0 IE BO Emitter Cutoff Curre.


INCHANGE 2N5468

nt VEB=5V; IC= 0 hFE DC Current Gain IC=3A; VCE= 5V VCE(sat) Collector-Emi tter Saturation Voltage IC= 3A; IB= 0.6 A VBE(sat) Base-Emitter Saturation Vol tage *:Pulse test:Pulse width=300us,dut y cycle≤2% IC= 3A; IB= 0.6A 2N5468 MIN MAX UNIT 400 V 1 mA 0.1 mA 1 5 60 5 V 1.5 V NOTICE: ISC rese rves the rights to make changes of the content herein the dat.




Part

2N5468

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·Excellent Safe Operating Area Low Collector-Emitter Saturation Volta ge ·The device employs the popular TO- 66 ·100% avalanche tested ·Minimum Lo t-to-Lot variations for robust device p erformance and reliable operation. APP LICATIONS ·High voltage high current p ower transistors ABSOLUTE MAXIMUM RATI NGS(Ta=25℃) SYMBOL PAR.
Manufacture

INCHANGE

Datasheet
Download 2N5468 Datasheet




 2N5468
isc Silicon NPN Power Transistor
DESCRIPTION
·Excellent Safe Operating Area
·Low Collector-Emitter Saturation Voltage
·The device employs the popular TO-66
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation.
APPLICATIONS
·High voltage high current power transistors
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Collector-Base Voltage
500
V
Collector-Emitter Voltage
400
V
Emitter-Base Voltage
7
V
Collector Current-Continuous
3
A
Collector Power Dissipation@TC=25
70
W
Junction Temperature
150
Storage Temperature
-65~200
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
2.5
/W
2N5468
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




 2N5468
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)* Collector-Emitter Sustaining Voltage IC=200mA; IB= 0
ICBO
Collector Cutoff Current
VCB=500V;IB= 0
IEBO
Emitter Cutoff Current
VEB=5V; IC= 0
hFE
DC Current Gain
IC=3A; VCE= 5V
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A
VBE(sat) Base-Emitter Saturation Voltage
*:Pulse test:Pulse width=300us,duty cycle≤2%
IC= 3A; IB= 0.6A
2N5468
MIN MAX UNIT
400
V
1
mA
0.1 mA
15
60
5
V
1.5
V
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark








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