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NPN Transistor. 2N5656 Datasheet

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NPN Transistor. 2N5656 Datasheet
















2N5656 Transistor. Datasheet pdf. Equivalent













Part

2N5656

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistors DESCR IPTION ·Collector-Emitter Sustaining V oltage- : VCEO(SUS) = 300V(Min) ·Low S aturation Voltage ·100% avalanche test ed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for use in line-operated equipment such as audio output amplifiers; low-current, h igh-voltage converters;.
Manufacture

INCHANGE

Datasheet
Download 2N5656 Datasheet


INCHANGE 2N5656

2N5656; and AC line relays. ABSOLUTE MAXIMUM R ATINGS(Ta=25℃) SYMBOL PARAMETER VA LUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Volta ge 300 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 0.5 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25 ℃ TJ Junction Temperature 1 A 20 W 150 ℃ Tstg Sto.


INCHANGE 2N5656

rage Temperature Range -65~150 ℃ THE RMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction t o Case MAX UNIT 6.25 ℃/W 2N5656 is c website:www.iscsemi.com isc & iscs emi is registered trademark isc Silico n NPN Power Transistors 2N5656 ELECTR ICAL CHARACTERISTICS TC=25℃ unless ot herwise specified SYMBOL PARAMETER C ONDITIONS MIN TYP. MAX UN.


INCHANGE 2N5656

IT VCEO(SUS)* Collector-Emitter Sustain ing Voltage IC= 100mA ; L= 50mH 300 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 300 V VCE(s at)-1 Collector-Emitter Saturation Volt age IC= 0.1A; IB= 10mA 1.0 V VCE(sat )-2 Collector-Emitter Saturation Voltag e IC= 0.25 A; IB= 25mA 2.5 V VCE(sat )-3 Collector-Emitter Saturation Voltag e IC= 0.5 A; IB= 0.





Part

2N5656

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistors DESCR IPTION ·Collector-Emitter Sustaining V oltage- : VCEO(SUS) = 300V(Min) ·Low S aturation Voltage ·100% avalanche test ed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for use in line-operated equipment such as audio output amplifiers; low-current, h igh-voltage converters;.
Manufacture

INCHANGE

Datasheet
Download 2N5656 Datasheet




 2N5656
isc Silicon NPN Power Transistors
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 300V(Min)
·Low Saturation Voltage
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation.
APPLICATIONS
·Designed for use in line-operated equipment such as audio
output amplifiers; low-current, high-voltage converters; and
AC line relays.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
300
V
VCEO
Collector-Emitter Voltage
300
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
0.5
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
1
A
20
W
150
Tstg
Storage Temperature Range
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
6.25 /W
2N5656
isc websitewww.iscsemi.com
isc & iscsemi is registered trademark




 2N5656
isc Silicon NPN Power Transistors
2N5656
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS)* Collector-Emitter Sustaining Voltage IC= 100mA ; L= 50mH
300
V
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0
300
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 0.1A; IB= 10mA
1.0
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 0.25 A; IB= 25mA
2.5
V
VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 0.5 A; IB= 0.1A
10
V
VBE(on) Base-Emitter On Voltage
IC= 0.1A ; VCE= 10V
1.0
V
ICEO
Collector Cutoff Current
ICEX
Collector Cutoff Current
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCE= 150V; IB= 0
VCE=250V;VBE(off)=1.5V
VCE=150V;VBE(off)=1.5V,TC=100
VCB= 275V; IE= 0
VEB= 6V; IC= 0
0.1 mA
0.1
1.0
mA
10 μA
10 μA
hFE-1
DC Current Gain
IC= 50mA ; VCE= 10V
25
hFE-2
DC Current Gain
IC= 0.1A ; VCE= 10V
30
250
hFE-3
DC Current Gain
IC= 0.25A ; VCE= 10V
15
hFE-4
DC Current Gain
IC= 0.5A ; VCE= 10V
5
COB
Output Capacitance
IE= 0; VCB= 10V; f= 100kHz
25
pF
fT
Current-Gain—Bandwidth Product
IC= 50mA; VCE= 10V; f= 10MHz
10
*:Pulse test:Pulse width=300us,duty cycle≤2%
MHz
isc websitewww.iscsemi.com
isc & iscsemi is registered trademark




 2N5656
isc Silicon NPN Power Transistors
2N5656
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
isc & iscsemi is registered trademark




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