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NPN Transistor. 2N5989 Datasheet

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NPN Transistor. 2N5989 Datasheet
















2N5989 Transistor. Datasheet pdf. Equivalent













Part

2N5989

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·Collector-Emitter Breakdown Vol tage- : V(BR)CEO= 60V(Min) ·Low Collec tor-Emitter Saturation Voltage ·100% a valanche tested ·Minimum Lot-to-Lot va riations for robust device performance and reliable operation APPLICATIONS · Designed for use in general purpose amp lifier and switching circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃.
Manufacture

INCHANGE

Datasheet
Download 2N5989 Datasheet


INCHANGE 2N5989

2N5989; ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO C ollector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collect or Current-Continuous 12 A ICM Coll ector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction T emperature 20 A 100 W -65~150 ℃ Tstg Storage Temperature Range -65~ 150 ℃ THERMAL CHARAC.


INCHANGE 2N5989

TERISTICS SYMBOL PARAMETER Rth j-c Th ermal Resistance, Junction to Case MAX 1.25 UNIT ℃/W 2N5989 isc website www.iscsemi.com isc & iscsemi is reg istered trademark isc Silicon NPN Powe r Transistor 2N5989 ELECTRICAL CHARAC TERISTICS TC=25℃ unless otherwise spe cified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-E mitter Breakdown Voltage.


INCHANGE 2N5989

IC= 200mA ; IB= 0 40 V VCE(sat)-1 Co llector-Emitter Saturation Voltage IC= 6A; IB= 0.6A 0.6 V VCE(sat)-2 Collec tor-Emitter Saturation Voltage IC= 12A; IB= 1.8A 1.7 V VBE(sat) Base-Emitte r Saturation Voltage IC= 12A; IB= 1.8A 2.5 V ICEO Collector Cutoff Curren t VCE= 20V ; IB= 0 2 mA IEBO Emitt er Cutoff Current VEB= 5V ; IC= 0 1 mA hFE-1 DC Curr.





Part

2N5989

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·Collector-Emitter Breakdown Vol tage- : V(BR)CEO= 60V(Min) ·Low Collec tor-Emitter Saturation Voltage ·100% a valanche tested ·Minimum Lot-to-Lot va riations for robust device performance and reliable operation APPLICATIONS · Designed for use in general purpose amp lifier and switching circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃.
Manufacture

INCHANGE

Datasheet
Download 2N5989 Datasheet




 2N5989
isc Silicon NPN Power Transistor
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min)
·Low Collector-Emitter Saturation Voltage
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in general purpose amplifier and
switching circuits
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
40
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
12
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
20
A
100
W
-65~150
Tstg
Storage Temperature Range
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX
1.25
UNIT
/W
2N5989
isc websitewww.iscsemi.com
isc & iscsemi is registered trademark




 2N5989
isc Silicon NPN Power Transistor
2N5989
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 200mA ; IB= 0
40
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 6A; IB= 0.6A
0.6
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 12A; IB= 1.8A
1.7
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 12A; IB= 1.8A
2.5
V
ICEO
Collector Cutoff Current
VCE= 20V ; IB= 0
2
mA
IEBO
Emitter Cutoff Current
VEB= 5V ; IC= 0
1
mA
hFE-1
DC Current Gain
IC= 1.5A ; VCE= 2V
40
hFE-2
DC Current Gain
IC= 6A ; VCE= 2V
20
120
hFE-3
DC Current Gain
IC= 12A ; VCE= 2V
7
fT
Current-Gain—Bandwidth Product
IC= 0.5A; VCE= 10V;ftest= 1.0MHz
2
MHz
isc websitewww.iscsemi.com
isc & iscsemi is registered trademark




 2N5989
isc Silicon NPN Power Transistor
2N5989
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
isc & iscsemi is registered trademark




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