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NPN Transistor. 2N5991 Datasheet

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NPN Transistor. 2N5991 Datasheet
















2N5991 Transistor. Datasheet pdf. Equivalent













Part

2N5991

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·Collector-Emitter Breakdown Vol tage- : V(BR)CEO= 60V(Min) ·Low Collec tor-Emitter Saturation Voltage ·100% a valanche tested ·Minimum Lot-to-Lot va riations for robust device performance and reliable operation APPLICATIONS · Designed for use in general purpose amp lifier and switching circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃.
Manufacture

INCHANGE

Datasheet
Download 2N5991 Datasheet


INCHANGE 2N5991

2N5991; ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collec tor Current-Continuous 12 A ICM Col lector Current-Peak PC Collector Powe r Dissipation @ TC=25℃ TJ Junction Temperature 20 A 100 W -65~150 Tstg Storage Temperature Range -65 ~150 ℃ THERMAL CHARA.


INCHANGE 2N5991

CTERISTICS SYMBOL PARAMETER Rth j-c T hermal Resistance, Junction to Case MA X 1.25 UNIT ℃/W 2N5991 isc website :www.iscsemi.com isc & iscsemi is re gistered trademark isc Silicon NPN Pow er Transistor 2N5991 ELECTRICAL CHARA CTERISTICS TC=25℃ unless otherwise sp ecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector- Emitter Breakdown Voltag.


INCHANGE 2N5991

e IC= 200mA ; IB= 0 80 V VCE(sat)-1 C ollector-Emitter Saturation Voltage IC= 6A; IB= 0.6A 0.6 V VCE(sat)-2 Colle ctor-Emitter Saturation Voltage IC= 12A ; IB= 1.8A 1.7 V VBE(sat) Base-Emitt er Saturation Voltage IC= 12A; IB= 1.8 A 2.5 V ICEO Collector Cutoff Curre nt VCE= 40V ; IB= 0 2 mA IEBO Emit ter Cutoff Current VEB= 5V ; IC= 0 1 mA hFE-1 DC Cur.




Part

2N5991

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·Collector-Emitter Breakdown Vol tage- : V(BR)CEO= 60V(Min) ·Low Collec tor-Emitter Saturation Voltage ·100% a valanche tested ·Minimum Lot-to-Lot va riations for robust device performance and reliable operation APPLICATIONS · Designed for use in general purpose amp lifier and switching circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃.
Manufacture

INCHANGE

Datasheet
Download 2N5991 Datasheet




 2N5991
isc Silicon NPN Power Transistor
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min)
·Low Collector-Emitter Saturation Voltage
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in general purpose amplifier and
switching circuits
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
12
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
20
A
100
W
-65~150
Tstg
Storage Temperature Range
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX
1.25
UNIT
/W
2N5991
isc websitewww.iscsemi.com
isc & iscsemi is registered trademark




 2N5991
isc Silicon NPN Power Transistor
2N5991
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 200mA ; IB= 0
80
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 6A; IB= 0.6A
0.6
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 12A; IB= 1.8A
1.7
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 12A; IB= 1.8A
2.5
V
ICEO
Collector Cutoff Current
VCE= 40V ; IB= 0
2
mA
IEBO
Emitter Cutoff Current
VEB= 5V ; IC= 0
1
mA
hFE-1
DC Current Gain
IC= 1.5A ; VCE= 2V
40
hFE-2
DC Current Gain
IC= 6A ; VCE= 2V
20
120
hFE-3
DC Current Gain
IC= 12A ; VCE= 2V
7
fT
Current-Gain—Bandwidth Product
IC= 0.5A; VCE= 10V;ftest= 1.0MHz
2
MHz
isc websitewww.iscsemi.com
isc & iscsemi is registered trademark




 2N5991
isc Silicon NPN Power Transistor
2N5991
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
isc & iscsemi is registered trademark




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