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NPN Transistor. 2N6098 Datasheet

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NPN Transistor. 2N6098 Datasheet
















2N6098 Transistor. Datasheet pdf. Equivalent













Part

2N6098

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·DC Current Gain - : hFE = 20-80 @ IC= 4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot v ariations for robust device performance and reliable operation APPLICATIONS · Designed for use in general-purpose amp lifier and switching applications. ABS OLUTE MAXIMUM RATINGS(T.
Manufacture

INCHANGE

Datasheet
Download 2N6098 Datasheet


INCHANGE 2N6098

2N6098; a=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 10 A IB Base Current-Continuous PC Collecto r Power Dissipation @ TC=25℃ TJ Jun ction Temperature 4 A 75 W 150 Tstg Storage Temperature Range -65 ~150 ℃ THERMAL CHARACTE.


INCHANGE 2N6098

RISTICS SYMBOL PARAMETER Rth j-c Ther mal Resistance, Junction to Case MAX U NIT 1.67 ℃/W 2N6098 isc website:w ww.iscsemi.com 1 isc & iscsemi is regi stered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified S YMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage I C= 50mA; IB= 0 VCE(sat).


INCHANGE 2N6098

-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VCE(sat)-2 Collector- Emitter Saturation Voltage IC= 10A; IB= 2.5A VBE(on) Base-Emitter On Voltage IC= 4A ; VCE= 4V ICEO Collector Cuto ff Current VCE= 60V;IB= 0 IEBO Emitt er Cutoff Current VEB= 8V; IC= 0 hFE DC Current Gain IC= 4A ; VCE= 4V fT Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 4V,ftest.





Part

2N6098

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·DC Current Gain - : hFE = 20-80 @ IC= 4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot v ariations for robust device performance and reliable operation APPLICATIONS · Designed for use in general-purpose amp lifier and switching applications. ABS OLUTE MAXIMUM RATINGS(T.
Manufacture

INCHANGE

Datasheet
Download 2N6098 Datasheet




 2N6098
isc Silicon NPN Power Transistor
DESCRIPTION
·DC Current Gain -
: hFE = 20-80@ IC= 4A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 60V(Min)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in general-purpose amplifier and
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
70
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
10
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
4
A
75
W
150
Tstg
Storage Temperature Range
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
1.67 /W
2N6098
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




 2N6098
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 2.5A
VBE(on) Base-Emitter On Voltage
IC= 4A ; VCE= 4V
ICEO
Collector Cutoff Current
VCE= 60V;IB= 0
IEBO
Emitter Cutoff Current
VEB= 8V; IC= 0
hFE
DC Current Gain
IC= 4A ; VCE= 4V
fT
Current-Gain—Bandwidth Product
IC= 0.5A ; VCE= 4V,ftest= 0.1MHz
2N6098
MIN MAX UNIT
60
V
1.3
V
3.5
V
1.3
V
0.5
mA
1.0
mA
20
80
0.8
MHz
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark








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