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NPN Transistor. 2N6102 Datasheet

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NPN Transistor. 2N6102 Datasheet
















2N6102 Transistor. Datasheet pdf. Equivalent













Part

2N6102

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor 2N6102 DESCRIPTION ·DC Current Gain - : hFE = 20-80@ IC= 5A ·Collector-Emitter Su staining Voltage- : VCEO(SUS)= 40V(Min) ·Minimum Lot-to-Lot variations for ro bust device performance and reliable op eration APPLICATIONS ·Designed for us e in general-purpose amplifier and swit ching applications. ABSOLUTE MAXIMUM R ATINGS(Ta=25℃) SYMBOL.
Manufacture

INCHANGE

Datasheet
Download 2N6102 Datasheet


INCHANGE 2N6102

2N6102; PARAMETER VALUE UNIT VCBO Collecto r-Base Voltage 45 V VCEO Collector- Emitter Voltage 40 V VCER Collector -Emitter Voltage RBE= 100Ω 45 V VEB O Emitter-Base Voltage 5 V IC Coll ector Current-Continuous 16 A IB Ba se Current-Continuous PC Collector Po wer Dissipation @ TC=25℃ TJ Junctio n Temperature 4 A 75 W 150 ℃ T stg Storage Temperatur.


INCHANGE 2N6102

e Range -65~150 ℃ THERMAL CHARACTERI STICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Ca se 1.67 ℃/W Rth j-a Thermal Resist ance, Junction to Ambient 70 ℃/W is c website:www.iscsemi.com 1 isc & is csemi is registered trademark isc Sili con NPN Power Transistor ELECTRICAL CH ARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETE.


INCHANGE 2N6102

R CONDITIONS VCEO(SUS) Collector-Emitt er Sustaining Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation V oltage IC= 16A; IB= 3.2A VBE(on) Base- Emitter On Voltage ICEX Collector Cut off Current ICEO Collector Cutoff Cur rent IC= 8A ; VCE= 4V VCE= 45V; VBE= - 1.5V VCE= 40V; VBE= -1.5V;TC=150℃ VCE = 40V;IB= 0 IEBO Emitter Cutoff Curre nt VEB= 5V; IC= 0 .




Part

2N6102

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor 2N6102 DESCRIPTION ·DC Current Gain - : hFE = 20-80@ IC= 5A ·Collector-Emitter Su staining Voltage- : VCEO(SUS)= 40V(Min) ·Minimum Lot-to-Lot variations for ro bust device performance and reliable op eration APPLICATIONS ·Designed for us e in general-purpose amplifier and swit ching applications. ABSOLUTE MAXIMUM R ATINGS(Ta=25℃) SYMBOL.
Manufacture

INCHANGE

Datasheet
Download 2N6102 Datasheet




 2N6102
isc Silicon NPN Power Transistor
2N6102
DESCRIPTION
·DC Current Gain -
: hFE = 20-80@ IC= 5A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 40V(Min)
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in general-purpose amplifier and
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
45
V
VCEO
Collector-Emitter Voltage
40
V
VCER
Collector-Emitter Voltage RBE= 100Ω
45
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
16
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
4
A
75
W
150
Tstg
Storage Temperature Range
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
1.67 /W
Rth j-a
Thermal Resistance, Junction to Ambient
70 /W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




 2N6102
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 16A; IB= 3.2A
VBE(on) Base-Emitter On Voltage
ICEX
Collector Cutoff Current
ICEO
Collector Cutoff Current
IC= 8A ; VCE= 4V
VCE= 45V; VBE= -1.5V
VCE= 40V; VBE= -1.5V;TC=150
VCE= 40V;IB= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 8A ; VCE= 4V
hFE-2
DC Current Gain
IC= 16A ; VCE= 4V
2N6102
MIN MAX UNIT
40
V
2.5
V
1.7
V
2.0
10
mA
2.0
mA
1.0
mA
15
60
5
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark








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