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IGBT. MMG200D120B6UC Datasheet

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IGBT. MMG200D120B6UC Datasheet






MMG200D120B6UC IGBT. Datasheet pdf. Equivalent




MMG200D120B6UC IGBT. Datasheet pdf. Equivalent





Part

MMG200D120B6UC

Description

IGBT



Feature


April 2020 PRODUCT FEATURES □ IGBT chi p in trench FS-technology □ Low switc hing losses □ VCE(sat) with positive temperature coefficient □ Fast switch ing and short tail current □ Free whe eling diodes with fast and soft reverse recovery MMG200D120B6UC Version 01 1200V 200A IGBT Module RoHS Compliant APPLICATIONS □ Welding Machine □ Po wer Supplies □ Others IGBT-inve.
Manufacture

MacMic

Datasheet
Download MMG200D120B6UC Datasheet


MacMic MMG200D120B6UC

MMG200D120B6UC; rter ABSOLUTE MAXIMUM RATINGS(T C =25° C unless otherwise specified) Symbol Parameter/Test Conditions VCES Collect or Emitter Voltage TJ=25℃ VGES Gate Emitter Voltage IC DC Collector Curr ent TC=25℃,TJmax=175℃ TC=95℃,TJm ax=175℃ ICM Repetitive Peak Collect or Current tp=1ms Ptot Power Dissipa tion Per IGBT TC=25℃,TJmax=175℃ V alues Unit 1200 V ±20 291 200.


MacMic MMG200D120B6UC

A 400 1071 W Diode-inverter ABSOL UTE MAXIMUM RATINGS (T C =25°C unless otherwise specified) Symbol Parameter /Test Conditions VRRM Repetitive Rever se Voltage TJ=25℃ IF(AV) Average Fo rward Current IFRM Repetitive Peak Fo rward Current I2t tp=1ms TJ =125℃, t=10ms, VR=0V Values Unit 1200 V 2 00 A 400 10000 A2S MacMic Science & Technology Co., Ltd. A.


MacMic MMG200D120B6UC

dd:#18, Hua Shan Zhong Lu, New Distric t, Changzhou City, Jiangsu Province, P. R .of China 1 Tel.:+86-519-8516370 8 Fax:+86-519-85162291 Post Code:21 3022 Website:www.macmicst.com MMG200 D120B6UC MMG200D120B6UC IGBT-inverter ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified) Symbol P arameter/Test Conditions VGE(th) Gate Emitter Threshold Voltage VC.

Part

MMG200D120B6UC

Description

IGBT



Feature


April 2020 PRODUCT FEATURES □ IGBT chi p in trench FS-technology □ Low switc hing losses □ VCE(sat) with positive temperature coefficient □ Fast switch ing and short tail current □ Free whe eling diodes with fast and soft reverse recovery MMG200D120B6UC Version 01 1200V 200A IGBT Module RoHS Compliant APPLICATIONS □ Welding Machine □ Po wer Supplies □ Others IGBT-inve.
Manufacture

MacMic

Datasheet
Download MMG200D120B6UC Datasheet




 MMG200D120B6UC
April 2020
PRODUCT FEATURES
IGBT chip in trench FS-technology
Low switching losses
VCE(sat) with positive temperature coefficient
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
MMG200D120B6UC
Version 01
1200V 200A IGBT Module
RoHS Compliant
APPLICATIONS
Welding Machine
Power Supplies
Others
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES Collector Emitter Voltage
TJ=25
VGES Gate Emitter Voltage
IC
DC Collector Current
TC=25,TJmax=175
TC=95,TJmax=175
ICM
Repetitive Peak Collector Current
tp=1ms
Ptot
Power Dissipation Per IGBT
TC=25,TJmax=175
Values
Unit
1200
V
±20
291
200
A
400
1071
W
Diode-inverter
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM Repetitive Reverse Voltage
TJ=25
IF(AV) Average Forward Current
IFRM
Repetitive Peak Forward Current
I2t
tp=1ms
TJ =125, t=10ms, VR=0V
Values
Unit
1200
V
200
A
400
10000
A2S
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com
MMG200D120B6UC




 MMG200D120B6UC
MMG200D120B6UC
IGBT-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emitter Threshold Voltage
VCE=VGE, IC=8mA
VCE(sat)
Collector Emitter
Saturation Voltage
IC=200A, VGE=15V, TJ=25
IC=200A, VGE=15V, TJ=125
IC=200A, VGE=15V, TJ=150
ICES
Collector Leakage Current
VCE=1200V, VGE=0V, TJ=25
VCE=1200V, VGE=0V, TJ=150
IGES
Gate Leakage Current
VCE=0V,VGE=±20V, TJ=25
Rgint
Integrated Gate Resistor
Qg
Gate Charge
VCE=600V, IC=200A , VGE=15V
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
VCE=25V, VGE=0V, f =1MHz
TJ=25
td(on)
Turn on Delay Time
tr
Rise Time
VCC=600V,IC=200A
RG =2.7Ω,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
TJ=25
td(off)
Turn off Delay Time
tf
Fall Time
VCC=600V,IC=200A
RG =2.7Ω,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
Eon
Turn on Energy
Eoff
Turn off Energy
VCC=600V,IC=200A
RG =2.7Ω,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=125
TJ=150
ISC
Short Circuit Current
tpsc10µS , VGE=15V
TJ=150,VCC=800V
RthJC Junction to Case Thermal Resistance Per IGBT
Min.
5.2
-400
Typ.
6.0
1.9
2.25
2.35
3.8
1
14.6
660
130
150
160
58
64
68
420
470
490
70
100
110
31.7
35.1
12.3
13
900
Max. Unit
6.5
2.35
V
100 µA
1
mA
400 nA
Ω
µC
nF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
0.14 K /W
Diode-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
IF=200A , VGE=0V, TJ=25
VF
Forward Voltage
IF=200A , VGE=0V, TJ=125
IF=200A , VGE=0V, TJ=150
trr
Reverse Recovery Time
IRRM
Max. Reverse Recovery Current
QRR
Reverse Recovery Charge
Erec
Reverse Recovery Energy
IF=200A , VR=600V
dIF/dt=-3000A/μs
TJ =150
RthJCD Junction to Case Thermal Resistance Per Diode
2
MMG200D120B6UC
Min. Typ. Max. Unit
1.75
2.3
1.55
V
1.5
580
ns
207
A
48
µC
16.2
mJ
0.25 K /W




 MMG200D120B6UC
MMG200D120B6UC
MODULE CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
TJmax
TJop
Max. Junction Temperature
Operating Temperature
Tstg
Storage Temperature
Visol
Isolation Breakdown Voltage
AC, 50Hz(R.M.S), t=1minute
CTI
Comparative Tracking Index
to heatsink
Torque
to terminal
RecommendedM6
RecommendedM6
Weight
Values
Unit
175
-40~150
-40~125
3000
V
225
3~5
Nm
2.5~5
Nm
300
g
400
25
150
300
200
400
Vge=17V
Vge=15V
300
Vge=13V
Vge=11V
200
Vge=9V
100
VGE=15V
0
0
1
2
3
4
VCEV
Figure 1. Typical Output Characteristics IGBT-inverter
3
100
TJ=150
0
0
1
2
3
4
5
VCEV
Figure 2. Typical Output Characteristics IGBT-inverter
MMG200D120B6UC






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