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IGBT. MMG200HB060H6EN Datasheet

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IGBT. MMG200HB060H6EN Datasheet






MMG200HB060H6EN IGBT. Datasheet pdf. Equivalent




MMG200HB060H6EN IGBT. Datasheet pdf. Equivalent





Part

MMG200HB060H6EN

Description

IGBT



Feature


March 2012 MMG200HB060H6EN PRELIMINARY 600V 200A IGBT Module RoHS Compliant FEATURES □ High short circuit capabi lity,self limiting short circuit curren t □ VCE(sat) with positive temperatur e coefficient □ Fast switching and sh ort tail current □ Free wheeling diod es with fast and soft reverse recovery □ Low switching losses APPLICATIONS □ High frequency switching a.
Manufacture

MacMic

Datasheet
Download MMG200HB060H6EN Datasheet


MacMic MMG200HB060H6EN

MMG200HB060H6EN; pplication □ Medical applications □ Motion/servo control □ UPS systems A BSOLUTE MAXIMUM RATINGS Symbol Parame ter IGBT VCES Collector - Emitter Vo ltage VGES Gate - Emitter Voltage IC DC Collector Current ICM Ptot Diode VRRM Repetitive Peak Collector Current Power Dissipation Per IGBT Repetitive Reverse Voltage IF(AV) Average Forwar d Current IFRM Repetit.


MacMic MMG200HB060H6EN

ive Peak Forward Current I2t TC=25°C unless otherwise specified Test Condit ions Values Unit TVj=25°C TC=25°C TC=75°C tp=1ms 600 V ±20 V 250 A 200 A 400 A 680 W TVj=25°C 6 00 V TC=25°C 250 A TC=75°C 200 A tp=1ms 400 A TVj =125°C, t=10ms , VR=0V 2800 A2s MacMic Science & Te chnology Co., Ltd. Version: 1 Add:# 18, Hua Shan Zhong Lu, New Di.


MacMic MMG200HB060H6EN

strict, Changzhou City, Jiangsu Province , P. R .of China Tel.:+86-519-851637 08 Fax:+86-519-85162291 Post Code:2 13022 Website:www.macmicst.com MMG20 0HB060H6EN ELECTRICAL AND THERMAL CHAR ACTERISTICS TC=25°C unless otherwise s pecified Symbol Parameter Test Condi tions IGBT VGE(th) Gate - Emitter Thr eshold Voltage VCE=VGE, IC=3.2mA VCE(s at) Collector - Emitter Sa.

Part

MMG200HB060H6EN

Description

IGBT



Feature


March 2012 MMG200HB060H6EN PRELIMINARY 600V 200A IGBT Module RoHS Compliant FEATURES □ High short circuit capabi lity,self limiting short circuit curren t □ VCE(sat) with positive temperatur e coefficient □ Fast switching and sh ort tail current □ Free wheeling diod es with fast and soft reverse recovery □ Low switching losses APPLICATIONS □ High frequency switching a.
Manufacture

MacMic

Datasheet
Download MMG200HB060H6EN Datasheet




 MMG200HB060H6EN
March 2012
MMG200HB060H6EN
PRELIMINARY
600V 200A IGBT Module
RoHS Compliant
FEATURES
High short circuit capability,self limiting short circuit current
VCE(sat) with positive temperature coefficient
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
Low switching losses
APPLICATIONS
High frequency switching application
Medical applications
Motion/servo control
UPS systems
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
IGBT
VCES
Collector - Emitter Voltage
VGES
Gate - Emitter Voltage
IC
DC Collector Current
ICM
Ptot
Diode
VRRM
Repetitive Peak Collector Current
Power Dissipation Per IGBT
Repetitive Reverse Voltage
IF(AV)
Average Forward Current
IFRM
Repetitive Peak Forward Current
I2t
TC=25°C unless otherwise specified
Test Conditions
Values
Unit
TVj=25°C
TC=25°C
TC=75°C
tp=1ms
600
V
±20
V
250
A
200
A
400
A
680
W
TVj=25°C
600
V
TC=25°C
250
A
TC=75°C
200
A
tp=1ms
400
A
TVj =125°C, t=10ms, VR=0V
2800
A2s
MacMic Science & Technology Co., Ltd.
Version: 1
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com




 MMG200HB060H6EN
MMG200HB060H6EN
ELECTRICAL AND THERMAL CHARACTERISTICS TC=25°C unless otherwise specified
Symbol
Parameter
Test Conditions
IGBT
VGE(th) Gate - Emitter Threshold Voltage VCE=VGE, IC=3.2mA
VCE(sat)
Collector - Emitter
Saturation Voltage
IC=200A, VGE=15V, TVj=25°C
IC=200A, VGE=15V, TVj=125°C
ICES
Collector Leakage Current
VCE=600V, VGE=0V, TVj=25°C
VCE=600V, VGE=0V, TVj=125°C
IGES
Gate Leakage Current
VCE=0V,VGE±15V, TVj=125°C
RGint
Integrated Gate Resistor
Qge
Gate Charge
VCE=300V, IC=200A , VGE=±15V
Cies
Input Capacitance
VCE=25V, VGE=0V, f =1MHz
Cres
Reverse Transfer Capacitance
td(on)
Turn - on Delay Time
tr
Rise Time
VCC=300V,IC=200A,
RG =3.9Ω,
VGE=±15V,
Inductive Load
TVj =25°C
TVj =125°C
TVj =25°C
TVj =125°C
td(off)
Turn - off Delay Time
tf
Fall Time
VCC=300V,IC=200A,
RG =3.9Ω,
VGE=±15V,
Inductive Load
TVj =25°C
TVj =125°C
TVj =25°C
TVj =125°C
Eon
Turn - on Energy
Eoff
Turn - off Energy
VCC=300V,IC=200A,
RG =3.9Ω,
VGE=±15V,
Inductive Load
TVj =25°C
TVj =125°C
TVj =25°C
TVj =125°C
ISC
Short Circuit Current
tpsc6µS , VGE=15V
TVj=125°C,VCC=360V
RthJC
Junction-to-Case Thermal Resistance Per IGBT
Diode
VF
Forward Voltage
IF=200A , VGE=0V, TVj =25°C
IF=200A , VGE=0V, TVj =125°C
IRRM
Qrr
Erec
RthJCD
Max. Reverse Recovery Current
Reverse Recovery Charge
Reverse Recovery Energy
IF=200A , VR=300V
diF/dt=-3500A/μs
TVj=125°C
Junction-to-Case Thermal Resistance Per Diode
Min.
4.9
-400
Typ.
5.8
1.45
1.6
1
2.1
13
0.38
110
120
50
60
490
520
60
70
2.5
3.5
5.5
8.0
950
1.55
1.50
170
16.0
4.0
Max.
6.5
1
5
400
0.22
0.42
Unit
V
V
V
mA
mA
nA
µC
nF
nF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
K /W
V
V
A
µC
mJ
K /W
-2-




 MMG200HB060H6EN
NTC SECTOR
CHARACTERISTIC VALUES
Symbol
Parameter
R25
B25/50
Resistance
MMG200HB060H6EN
TC=25°C unless otherwise specified
Test Conditions
TC =25°C
Min. Typ. Max. Unit
5
K
3375
K
MODULE CHARACTERISTICS
Symbol
Parameter
TVj max
TVj op
Tstg
Visol
CTI
Max. Junction Temperature
Operating Temperature
Storage Temperature
Insulation Test Voltage
Comparative Tracking Index
Torque Module-to-Sink
Torque Module Electrodes
Weight
TC=25°C unless otherwise specified
Test Conditions
AC, t=1min
RecommendedM6
RecommendedM6
Min.
-40
-40
350
3
2.5
Typ.
3000
200
Max.
175
150
125
5
5
Unit
°C
°C
°C
V
N·m
N·m
g
400
VGE =15V
320
240
TVj=25°C
160
TVj=125°C
80
00 0.4 0.8 1.2 1.6 2.0 2.4
VCEV
Figure1. Typical Output characteristics
IGBT-inverter
400
320
240 TVj =125°C
160
80
00 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VCEV
Figure2. Typical Output characteristics
IGBT-inverter
-3-






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