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IGBT. MMG200Q120B6TC Datasheet

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IGBT. MMG200Q120B6TC Datasheet






MMG200Q120B6TC IGBT. Datasheet pdf. Equivalent




MMG200Q120B6TC IGBT. Datasheet pdf. Equivalent





Part

MMG200Q120B6TC

Description

IGBT



Feature


September 2020 PRODUCT FEATURES □ IGBT CHIP(Trench+Field Stop technology) □ VCE(sat) with positive temperature coe fficient □ High short circuit capabil ity □ Fast switching and short tail c urrent □ Free wheeling diodes with fa st and soft reverse recovery □ Low sw itching losses APPLICATIONS □ High fr equency switching application □ Medic al applications □ Motion/servo con.
Manufacture

MacMic

Datasheet
Download MMG200Q120B6TC Datasheet


MacMic MMG200Q120B6TC

MMG200Q120B6TC; trol □ UPS systems MMG200Q120B6TC Ve rsion 01 1200V 200A IGBT Module RoHS C ompliant IGBT-inverter ABSOLUTE MAXIM UM RATINGS(T C =25°C unless otherwise specified) Symbol Parameter/Test Cond itions VCES Collector Emitter Voltage TJ=25℃ VGES Gate Emitter Voltage I C DC Collector Current TC=25℃, TJma x=175℃ TC=100℃, TJmax=175℃ ICM Repetitive Peak Collector Curre.


MacMic MMG200Q120B6TC

nt tp=1ms Ptot Power Dissipation Per IGBT TC=25℃, TJmax=175℃ Values U nit 1200 V ±20 300 200 A 400 107 1 W Diode-inverter ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise sp ecified) Symbol Parameter/Test Condit ions VRRM Repetitive Reverse Voltage TJ=25℃ IF(AV) Average Forward Curren t IFRM Repetitive Peak Forward Curren t I2t tp=1ms TJ =125℃, t.


MacMic MMG200Q120B6TC

=10ms, VR=0V Values 1200 200 400 11.25 Unit V A KA2S MacMic Science & Techno logy Co., Ltd. Add:#18, Hua Shan Zho ng Lu, New District, Changzhou City, Ji angsu Province, P. R .of China 1 Tel. :+86-519-85163708 Fax:+86-519-85162 291 Post Code:213022 Website:www.ma cmicst.com MMG200Q120B6TC MMG200Q120B 6TC IGBT-inverter ELECTRICAL CHARACTE RISTICS (T C =25°C unless ot.

Part

MMG200Q120B6TC

Description

IGBT



Feature


September 2020 PRODUCT FEATURES □ IGBT CHIP(Trench+Field Stop technology) □ VCE(sat) with positive temperature coe fficient □ High short circuit capabil ity □ Fast switching and short tail c urrent □ Free wheeling diodes with fa st and soft reverse recovery □ Low sw itching losses APPLICATIONS □ High fr equency switching application □ Medic al applications □ Motion/servo con.
Manufacture

MacMic

Datasheet
Download MMG200Q120B6TC Datasheet




 MMG200Q120B6TC
September 2020
PRODUCT FEATURES
IGBT CHIP(Trench+Field Stop technology)
VCE(sat) with positive temperature coefficient
High short circuit capability
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
Low switching losses
APPLICATIONS
High frequency switching application
Medical applications
Motion/servo control
UPS systems
MMG200Q120B6TC
Version 01
1200V 200A IGBT Module
RoHS Compliant
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES Collector Emitter Voltage
TJ=25
VGES Gate Emitter Voltage
IC
DC Collector Current
TC=25, TJmax=175
TC=100, TJmax=175
ICM
Repetitive Peak Collector Current
tp=1ms
Ptot
Power Dissipation Per IGBT
TC=25, TJmax=175
Values
Unit
1200
V
±20
300
200
A
400
1071
W
Diode-inverter
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM Repetitive Reverse Voltage
TJ=25
IF(AV) Average Forward Current
IFRM
Repetitive Peak Forward Current
I2t
tp=1ms
TJ =125, t=10ms, VR=0V
Values
1200
200
400
11.25
Unit
V
A
KA2S
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com
MMG200Q120B6TC




 MMG200Q120B6TC
MMG200Q120B6TC
IGBT-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emitter Threshold Voltage
VCE(sat)
Collector - Emitter
Saturation Voltage
ICES
Collector Leakage Current
IGES
Gate Leakage Current
VCE=VGE, IC=8mA
IC=200A, VGE=15V, TJ=25
IC=200A, VGE=15V, TJ=125
IC=200A, VGE=15V, TJ=150
VCE=1200V, VGE=0V, TJ=25
VCE=1200V, VGE=0V, TJ=150
VCE=0V,VGE=±20V, TJ=25
Rgint
Integrated Gate Resistor
Qg
Gate Charge
VCE=600V, IC=200A , VGE=15V
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
td(on)
Turn on Delay Time
tr
Rise Time
td(off)
Turn off Delay Time
tf
Fall Time
Eon
Turn on Energy
Eoff
Turn off Energy
VCE=25V, VGE=0V, f =1MHz
VCC=600V,IC=200A
RG =2.7Ω,
VGE=±15V,
Inductive Load
VCC=600V,IC=200A
RG =2.7Ω,
VGE=±15V,
Inductive Load
VCC=600V,IC=200A
RG =2.7Ω,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
TJ=125
TJ=150
TJ=125
TJ=150
ISC
Short Circuit Current
tpsc10µS , VGE=15V
TJ=125,VCC=800V
RthJC Junction to Case Thermal Resistance (Per IGBT)
Min.
5.0
-400
Typ.
5.8
1.8
2.1
2.15
3.5
1.06
14.2
600
160
180
190
60
64
66
390
440
460
100
180
200
23.6
26.1
16.9
18.4
840
Max. Unit
6.5
2.25
V
1
mA
10
400 nA
Ω
µC
nF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
0.14 K /W
Diode-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
IF=200A , VGE=0V, TJ =25
VF
Forward Voltage
IF=200A , VGE=0V, TJ =125
IF=200A , VGE=0V, TJ =150
trr
Reverse Recovery Time
IRRM
Max. Reverse Recovery Current
QRR
Reverse Recovery Charge
Erec
Reverse Recovery Energy
IF=200A , VR=600V
dIF/dt=-3600A/μs
TJ =150
RthJCD Junction to Case Thermal Resistance Per Diode
2
MMG200Q120B6TC
Min. Typ. Max. Unit
1.75
2.3
1.5
V
1.45
330
ns
273
A
44
µC
18.5
mJ
0.2 K /W




 MMG200Q120B6TC
MMG200Q120B6TC
MODULE CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
TJmax
TJop
Max. Junction Temperature
Operating Temperature
Tstg
Storage Temperature
Visol
Isolation Breakdown Voltage
AC, 50Hz(R.M.S), t=1minute
CTI
Comparative Tracking Index
to heatsink
Torque
to terminal
RecommendedM6
RecommendedM5
Weight
Values
Unit
175
-40~150
-40~125
3000
V
200
3~5
Nm
2.5~5
Nm
200
g
400
25
150
300
200
100
VGE=15V
400
Vge=17V
Vge=15V
300
Vge=13V
Vge=11V
Vge=9V
200
100
TJ=150
0
0
1
2
3
4
VCEV
Figure 1. Typical Output Characteristics IGBT-inverter
3
0
0
1
2
3
4
5
VCEV
Figure 2. Typical Output Characteristics IGBT-inverter
MMG200Q120B6TC






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