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IGBT. MMG200S060B6TC Datasheet

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IGBT. MMG200S060B6TC Datasheet






MMG200S060B6TC IGBT. Datasheet pdf. Equivalent




MMG200S060B6TC IGBT. Datasheet pdf. Equivalent





Part

MMG200S060B6TC

Description

IGBT



Feature


August 2020 PRODUCT FEATURES □ IGBT CH IP(Trench+Field Stop technology) □ Hi gh short circuit capability,self limiti ng short circuit current □ VCE(sat) w ith positive temperature coefficient Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery □ Low switchin g losses APPLICATIONS □ High frequenc y switching application □ Medica.
Manufacture

MacMic

Datasheet
Download MMG200S060B6TC Datasheet


MacMic MMG200S060B6TC

MMG200S060B6TC; l applications □ Motion/servo control □ UPS systems MMG200S060B6TC Versio n 01 600V 200A IGBT Module RoHS Compli ant IGBT-inverter ABSOLUTE MAXIMUM RA TINGS(T C =25°C unless otherwise speci fied) Symbol Parameter/Test Condition s VCES VGES Collector Emitter Voltage Gate Emitter Voltage TJ=25℃ IC DC Collector Current ICM Repetitive Pea k Collector Current TC=2.


MacMic MMG200S060B6TC

5℃,TJmax=175℃ TC=60℃,TJmax=175℃ tp=1ms Ptot Power Dissipation Per IGB T TC=25℃,TJmax=175℃ Values Unit 600 V ±20 236 200 A 400 600 W Diode-inverter ABSOLUTE MAXIMUM RATING S (T C =25°C unless otherwise specifie d) Symbol Parameter/Test Conditions VRRM Repetitive Reverse Voltage TJ=25 IF(AV) Average Forward Current IF RM Repetitive Peak Forward Curren.


MacMic MMG200S060B6TC

t tp=1ms I2t TJ =125℃, t=10ms, VR=0 V Values Unit 600 V 200 A 400 360 0 A2S MacMic Science & Technology Co. , Ltd. Add:#18, Hua Shan Zhong Lu, Ne w District, Changzhou City, Jiangsu Pro vince, P. R .of China 1 Tel.:+86-519- 85163708 Fax:+86-519-85162291 Post Co de:213022 Website :www.macmicst.com MMG200S060B6TC IGBT-inverter ELECTR ICAL CHARACTERISTICS (T C =25°.

Part

MMG200S060B6TC

Description

IGBT



Feature


August 2020 PRODUCT FEATURES □ IGBT CH IP(Trench+Field Stop technology) □ Hi gh short circuit capability,self limiti ng short circuit current □ VCE(sat) w ith positive temperature coefficient Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery □ Low switchin g losses APPLICATIONS □ High frequenc y switching application □ Medica.
Manufacture

MacMic

Datasheet
Download MMG200S060B6TC Datasheet




 MMG200S060B6TC
August 2020
PRODUCT FEATURES
IGBT CHIP(Trench+Field Stop technology)
High short circuit capability,self limiting short circuit current
VCE(sat) with positive temperature coefficient
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
Low switching losses
APPLICATIONS
High frequency switching application
Medical applications
Motion/servo control
UPS systems
MMG200S060B6TC
Version 01
600V 200A IGBT Module
RoHS Compliant
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES
VGES
Collector Emitter Voltage
Gate Emitter Voltage
TJ=25
IC
DC Collector Current
ICM
Repetitive Peak Collector Current
TC=25,TJmax=175
TC=60,TJmax=175
tp=1ms
Ptot
Power Dissipation Per IGBT
TC=25,TJmax=175
Values
Unit
600
V
±20
236
200
A
400
600
W
Diode-inverter
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM Repetitive Reverse Voltage
TJ=25
IF(AV)
Average Forward Current
IFRM
Repetitive Peak Forward Current
tp=1ms
I2t
TJ =125, t=10ms, VR=0V
Values
Unit
600
V
200
A
400
3600
A2S
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Website www.macmicst.com




 MMG200S060B6TC
MMG200S060B6TC
IGBT-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emitter Threshold Voltage
VCE=VGE, IC=3.2mA
VCE(sat)
Collector Emitter
Saturation Voltage
IC=200A, VGE=15V, TJ=25
IC=200A, VGE=15V, TJ=125
IC=200A, VGE=15V, TJ=150
ICES
Collector Leakage Current
VCE=600V, VGE=0V, TJ=25
VCE=600V, VGE=0V, TJ=150
IGES
Gate Leakage Current
VCE=0V,VGE=±20V, TJ=25
Rgint
Integrated Gate Resistor
Qg
Gate Charge
VCE=300V, IC=200A , VGE=15V
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
VCE=25V, VGE=0V, f =1MHz
td(on)
Turn on Delay Time
tr
Rise Time
VCC=300V,IC=200A
RG =2.7,
VGE=±15V,
Inductive Load
TJ=25
TJ=150
TJ=25
TJ=150
td(off)
Turn off Delay Time
tf
Fall Time
VCC=300V,IC=200A
RG =2.7,
VGE=±15V,
Inductive Load
TJ=25
TJ=150
TJ=25
TJ=150
TJ=25
Eon
Turn on Energy
Eoff
Turn off Energy
VCC=300V,IC=200A
RG =2.7,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
ISC
Short Circuit Current
tpsc6µS , VGE=15V
TJ=125,VCC=360V
RthJC Junction to Case Thermal Resistance Per IGBT
Diode-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
IF=200A , VGE=0V, TJ=25
VF
Forward Voltage
IF=200A , VGE=0V, TJ=125
IF=200A , VGE=0V, TJ=150
trr
Reverse Recovery Time
IRRM
Max. Reverse Recovery Current
QRR
Reverse Recovery Charge
Erec
Reverse Recovery Energy
IF=200A , VR=300V
dIF/dt=-3400A/μs
TJ =150
RthJCD Junction to Case Thermal Resistance Per Diode
Min. Typ. Max. Unit
5.0
5.8
6.5
1.55
2.0
V
1.75
1.8
1
mA
5
mA
-400
400 nA
2
0.94
µC
12.6
nF
520
pF
70
ns
80
ns
60
ns
70
ns
310
ns
350
ns
60
ns
70
ns
3.5
mJ
5.3
mJ
5.7
mJ
4.6
mJ
5.7
mJ
6.1
mJ
880
A
0.25 K /W
Min. Typ. Max. Unit
1.7
2.1
1.55
V
1.45
146
ns
165
A
13.2
µC
3
mJ
0.45 K /W
2




 MMG200S060B6TC
MMG200S060B6TC
MODULE CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
TJmax
TJop
Tstg
Visol
Max. Junction Temperature
Operating Temperature
Storage Temperature
Isolation Breakdown Voltage
AC, 50Hz(R.M.S), t=1minute
CTI
Comparative Tracking Index
to heatsink
Torque
to terminal
RecommendedM6
RecommendedM5
Weight
Values
Unit
175
-40~150
-40~125
3000
V
200
3~5
Nm
2.5~5
Nm
160
g
400
25
150
300
200
400
Vge=17V
Vge=15V
300
Vge=13V
Vge=11V
Vge=9V
200
100
VGE=15V
0
0 0.5 1 1.5 2 2.5 3 3.5
VCEV
Figure 1. Typical Output Characteristics IGBT-inverter
3
100
TJ=150
0
0
1
2
3
4
5
VCEV
Figure 2. Typical Output Characteristics IGBT-inverter






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