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MOSFET. IQE013N04LM6CG Datasheet

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MOSFET. IQE013N04LM6CG Datasheet






IQE013N04LM6CG MOSFET. Datasheet pdf. Equivalent




IQE013N04LM6CG MOSFET. Datasheet pdf. Equivalent





Part

IQE013N04LM6CG

Description

MOSFET



Feature


IQE013N04LM6CG MOSFET OptiMOSTMPower-M OSFET,40V Features •Optimizedfor synchronousrectification •Verylow on-stateresistanceRDS(on) •100%av alanchetested •Superiorthermalres istance •N-channel,logiclevel • Pb-freeleadplating;RoHScompliant Halogen-freeaccordingtoIEC61249-2- 21 Productvalidation Fullyqualifieda ccordingtoJEDECforIndustrial.
Manufacture

Infineon

Datasheet
Download IQE013N04LM6CG Datasheet


Infineon IQE013N04LM6CG

IQE013N04LM6CG; Applications Table1KeyPerforman ceParameters Parameter Value Unit VDS 40 V RDS(on),max 1.35 mΩ ID 205 A Qoss 45 nC Qg(0V..10V) 41 nC PG-TTFN-9-1 1 234 9 8765 Drain Pi n 5-8 Gate Pin 9 Source Pin 1-4 Type/ OrderingCode IQE013N04LM6CG Package PG-TTFN-9-1 Marking 01304C6 RelatedL inks - Final Data Sheet 1 Rev.2.0, 2020-07-15 OptiMOS.


Infineon IQE013N04LM6CG

TMPower-MOSFET,40V IQE013N04LM6CG Tab leofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum rati ngs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..


Infineon IQE013N04LM6CG

. . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characte ristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical c haracteristics dia.

Part

IQE013N04LM6CG

Description

MOSFET



Feature


IQE013N04LM6CG MOSFET OptiMOSTMPower-M OSFET,40V Features •Optimizedfor synchronousrectification •Verylow on-stateresistanceRDS(on) •100%av alanchetested •Superiorthermalres istance •N-channel,logiclevel • Pb-freeleadplating;RoHScompliant Halogen-freeaccordingtoIEC61249-2- 21 Productvalidation Fullyqualifieda ccordingtoJEDECforIndustrial.
Manufacture

Infineon

Datasheet
Download IQE013N04LM6CG Datasheet




 IQE013N04LM6CG
IQE013N04LM6CG
MOSFET
OptiMOSTMPower-MOSFET,40V
Features
•Optimizedforsynchronousrectification
•Verylowon-stateresistanceRDS(on)
•100%avalanchetested
•Superiorthermalresistance
•N-channel,logiclevel
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
40
V
RDS(on),max
1.35
m
ID
205
A
Qoss
45
nC
Qg(0V..10V)
41
nC
PG-TTFN-9-1
1 234
9
8765
Drain
Pin 5-8
Gate
Pin 9
Source
Pin 1-4
Type/OrderingCode
IQE013N04LM6CG
Package
PG-TTFN-9-1
Marking
01304C6
RelatedLinks
-
Final Data Sheet
1
Rev.2.0,2020-07-15




 IQE013N04LM6CG
OptiMOSTMPower-MOSFET,40V
IQE013N04LM6CG
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Final Data Sheet
2
Rev.2.0,2020-07-15




 IQE013N04LM6CG
OptiMOSTMPower-MOSFET,40V
IQE013N04LM6CG
1Maximumratings
atTA=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current1)
ID
Pulsed drain current3)
Avalanche current, single pulse4)
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
ID,pulse
IAS
EAS
VGS
Ptot
Tj,Tstg
Min.
-
-
-
-
-
-
-
-
-20
-
-
-55
Values
Typ. Max.
-
205
-
145
-
170
-
120
-
31
-
820
-
50
-
255
-
20
-
107
-
2.5
-
175
Unit Note/TestCondition
VGS=10V,TC=25°C
VGS=10V,TC=100°C
A VGS=4.5V,TC=25°C
VGS=4.5V,TC=100°C
VGS=10V,TA=25°C,RthJA=60K/W2)
A TC=25°C
A TC=25°C
mJ ID=20A,RGS=25
V-
W
TC=25°C
TA=25°C,RthJA=60K/W2)
°C
IEC climatic category;
DIN IEC 68-1: 55/175/56
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case
Device on PCB,
6 cm2 cooling area2)
RthJC
RthJA
Min.
-
Values
Typ. Max.
-
1.4
Unit Note/TestCondition
K/W -
-
-
60 K/W -
1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual
environmental conditions.
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) See Diagram 3 for more detailed information
4) See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.2.0,2020-07-15






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