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Silicon Transistors. BDX54CG Datasheet

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Silicon Transistors. BDX54CG Datasheet






BDX54CG Transistors. Datasheet pdf. Equivalent




BDX54CG Transistors. Datasheet pdf. Equivalent





Part

BDX54CG

Description

Plastic Medium-Power Complementary Silicon Transistors

Manufacture

ON Semiconductor

Datasheet
Download BDX54CG Datasheet


ON Semiconductor BDX54CG

BDX54CG; BDX53B, BDX53C (NPN), BDX54B, BDX54C (PN P) Plastic Medium-Power Complementary Silicon Transistors These devices are designed for general−purpose amplifie r and low−speed switching application s. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc Collector Emitter Sustaining Voltage − @ 100 mAdc VCEO(sus) = 80 Vdc (Min ) − BDX53B, 54B VCEO(sus) = 10.


ON Semiconductor BDX54CG

0 Vdc (Min) − BDX53C, 54C • Low Coll ector−Emitter Saturation Voltage − VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Ad c VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 A dc • Monolithic Construction with Bui lt−In Base−Emitter Shunt Resistors • These Devices are Pb−Free and ar e RoHS Compliant* ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Rating Symbol Value Unit ÎÎÎÎÎÎÎÎÎÎ.


ON Semiconductor BDX54CG

ÎÎÎÎÎÎÎÎÎ Collector−Emitter V oltage VCEO Vdc ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ BDX53B, BDX54B 80 BDX53C, BDX54C 100 ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ Collector−Base V oltage VCB ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ BDX53B, BDX54B BDX53C, BD X54C Vdc 80 100 ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ Emitter−Base Voltag e ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Current − Continuous ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ − Peak VEB 5.0 Vdc IC 8.0 Adc .



Part

BDX54CG

Description

Plastic Medium-Power Complementary Silicon Transistors

Manufacture

ON Semiconductor

Datasheet
Download BDX54CG Datasheet




 BDX54CG
BDX53B, BDX53C (NPN),
BDX54B, BDX54C (PNP)
Plastic Medium-Power
Complementary Silicon
Transistors
These devices are designed for general−purpose amplifier and
low−speed switching applications.
Features
High DC Current Gain −
hFE = 2500 (Typ) @ IC = 4.0 Adc
Collector Emitter Sustaining Voltage − @ 100 mAdc
VCEO(sus) = 80 Vdc (Min) − BDX53B, 54B
VCEO(sus) = 100 Vdc (Min) − BDX53C, 54C
Low Collector−Emitter Saturation Voltage −
VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc
VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc
Monolithic Construction with Built−In Base−Emitter Shunt Resistors
These Devices are Pb−Free and are RoHS Compliant*
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Rating
Symbol Value
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Emitter Voltage
VCEO
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ BDX53B, BDX54B
80
BDX53C, BDX54C
100
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Base Voltage
VCB
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ BDX53B, BDX54B
BDX53C, BDX54C
Vdc
80
100
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter−Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Current − Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ − Peak
VEB
5.0
Vdc
IC
8.0
Adc
12
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base Current
IB
0.2
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Device Dissipation @ TC = 25°C
PD
65
W
Derate above 25°C
0.48
W/°C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Operating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Temperature Range
TJ, Tstg −65 to +150 °C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic
Symbol
Max
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance, Junction−to−Ambient
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance, Junction−to−Case
RqJA
RqJC
70
°C/W
1.92
°C/W
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DARLINGTON
8 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
80−100 VOLTS, 65 WATTS
4
1
2
3
TO−220
CASE 221A
STYLE 1
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Collector
BDX5xyG
AY WW
1
3
Base 2 Emitter
Collector
BDX5xy =
A
=
Y
=
WW =
G
=
Device Code
x = 3 or 4
y = B or C
Assembly Location
Year
Work Week
Pb−Free Package
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
1
November, 2014 − Rev. 15
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Publication Order Number:
BDX53B/D





 BDX54CG
BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP)
TA TC
4.0 80
3.0 60
2.0 40
1.0 20
TC
TA
0
0 20 40 60 80 100 120 140 160
T, TEMPERATURE (°C)
Figure 1. Power Derating
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 100 mAdc, IB = 0)
VCEO(sus)
Vdc
BDX53B, BDX54B
80
BDX53C, BDX54C
100
Collector Cutoff Current
(VCE = 40 Vdc, IB = 0)
(VCE = 50 Vdc, IB = 0)
Collector Cutoff Current
(VCB = 80 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0)
BDX53B, BDX54B
BDX53C, BDX54C
BDX53B, BDX54B
BDX53C, BDX54C
ICEO
ICBO
mAdc
0.5
0.5
mAdc
0.2
0.2
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 3.0 Adc, VCE = 3.0 Vdc)
Collector−Emitter Saturation Voltage
(IC = 3.0 Adc, IB = 12 mAdc)
hFE
750
VCE(sat)
2.0
Vdc
4.0
Base−Emitter Saturation Voltage
(IC = 3.0 Adc, IC = 12 mA)
VBE(sat)
2.5
Vdc
DYNAMIC CHARACTERISTICS
Small−Signal Current Gain
(IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)
hfe
4.0
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
Cob
BDX53B, 53C
BDX54B, 54C
pF
300
200
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
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2





 BDX54CG
BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP)
RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPES, e.g.:
 1N5825 USED ABOVE IB [ 100 mA
 MSD6100 USED BELOW IB [ 100 mA
TUT
VCC
- 30 V
RC
SCOPE
V2
RB
APPROX
+ 8.0 V
0
51 D1
[ 8.0 k [ 120
V1
APPROX
-12 V
25 ms
tr, tf v 10 ns
DUTY CYCLE = 1.0%
+ 4.0 V
for td and tr, D1 is disconnected
and V2 = 0
For NPN test circuit reverse all polarities
Figure 2. Switching Time Test Circuit
5.0
3.0
ts
2.0
1.0
tf
0.7
0.5
0.3
0.2 VCC = 30 V
IC/IB = 250
0.1 IB1 = IB2
0.07 TJ = 25°C
0.05
0.1
0.2 0.3
tr
td @ VBE(off) = 0 V
0.5 0.7 1.0 2.0 3.0
IC, COLLECTOR CURRENT (AMP)
Figure 3. Switching Times
5.0 7.0 10
1.0
0.7 D = 0.5
0.5
0.3
0.2
0.2
0.1
0.1
0.05
0.07
0.02
0.05
0.03
SINGLE PULSE
0.02
0.01
0.01
0.01 0.02 0.03 0.05 0.1
0.2 0.3 0.5
P(pk)
t1
t2
SINGLE
PULSE
DUTY CYCLE, D = t1/t2
RqJC(t) = r(t) RqJC
RqJC = 1.92°C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RqJC(t)
1.0 2.0 3.0 5.0 10
t, TIME OR PULSE WIDTH (ms)
20 30 50 100 200 300 500 1000
Figure 4. Thermal Response
20
100 ms
10
500 ms
5.0
5.0 ms
2.0
TJ = 150°C
1.0 ms
dc
1.0
BONDING WIRE LIMITED
0.5
THERMALLY LIMITED @ TC = 25°C
 (SINGLE PULSE)
0.2
SECOND BREAKDOWN LIMITED
0.1 CURVES APPLY BELOW RATED VCEO
0.05
0.02
1.0
2.0 3.0
BDX53B, BDX54B
BDX53C, BDX54C
5.0 7.0 10
20 30 50
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
70 100
Figure 5. Active−Region Safe Operating Area
There are two limitations on the power handling ability of
a transistor average junction temperature and second
breakdown. Safe operating area curves indicate IC −VCE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150°C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided
TJ(pk) t 150°C. TJ(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
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