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Static RAM. IDT71V416 Datasheet

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Static RAM. IDT71V416 Datasheet
















IDT71V416 RAM. Datasheet pdf. Equivalent













Part

IDT71V416

Description

3.3V CMOS Static RAM



Feature


3.3V CMOS Static RAM 4 Meg (256K x 16-Bi t) 71V416S 71V416L Features ◆ 256K x 16 advanced high-speed CMOS Static RA M ◆ JEDEC Center Power / GND pinout f or reduced noise. ◆ Equal access and cycle times – Commercial and Industri al: 10/12/15ns ◆ One Chip Select plus one Output Enable pin ◆ Bidirectiona l data inputs and outputs directly LVTT L-compatible ◆ Low power consu.
Manufacture

Renesas

Datasheet
Download IDT71V416 Datasheet


Renesas IDT71V416

IDT71V416; mption via chip deselect ◆ Upper and L ower Byte Enable Pins ◆ Single 3.3V p ower supply ◆ Available in 44-pin, 40 0 mil plastic SOJ package and a 44- pin , 400 mil TSOP Type II package and a 48 ball grid array, 9mm x 9mm package. Green parts available, see ordering i nformation Functional Block Diagram De scription The IDT71V416 is a 4,194,304- bit high-speed Static RAM .


Renesas IDT71V416

organized as 256K x 16. It is fabricated using high-performance, high-reliabili ty CMOS technology. This state-of-the-a rt technology, combined with innovative circuit design techniques, provides a cost-effective solution for highspeed m emory needs. The IDT71V416 has an outpu t enable pin which operates as fast as 5ns, with address access times as fast as 10ns. All bidir.


Renesas IDT71V416

ectional inputs and outputs of the IDT71 V416 are LVTTL-compatible and operation is from a single 3.3V supply. Fully st atic asynchronous circuitry is used, re quiring no clocks or refresh for operat ion. The IDT71V416 is packaged in a 44- pin, 400 mil Plastic SOJ and a 44-pin, 400 mil TSOP Type II package and a 48 b all grid array, 9mm x 9mm package. Out put OE Enable B.





Part

IDT71V416

Description

3.3V CMOS Static RAM



Feature


3.3V CMOS Static RAM 4 Meg (256K x 16-Bi t) 71V416S 71V416L Features ◆ 256K x 16 advanced high-speed CMOS Static RA M ◆ JEDEC Center Power / GND pinout f or reduced noise. ◆ Equal access and cycle times – Commercial and Industri al: 10/12/15ns ◆ One Chip Select plus one Output Enable pin ◆ Bidirectiona l data inputs and outputs directly LVTT L-compatible ◆ Low power consu.
Manufacture

Renesas

Datasheet
Download IDT71V416 Datasheet




 IDT71V416
3.3V CMOS Static RAM
4 Meg (256K x 16-Bit)
71V416S
71V416L
Features
256K x 16 advanced high-speed CMOS Static RAM
JEDEC Center Power / GND pinout for reduced noise.
Equal access and cycle times
– Commercial and Industrial: 10/12/15ns
One Chip Select plus one Output Enable pin
Bidirectional data inputs and outputs directly
LVTTL-compatible
Low power consumption via chip deselect
Upper and Lower Byte Enable Pins
Single 3.3V power supply
Available in 44-pin, 400 mil plastic SOJ package and a 44-
pin, 400 mil TSOP Type II package and a 48 ball grid array,
9mm x 9mm package.
Green parts available, see ordering information
Functional Block Diagram
Description
The IDT71V416 is a 4,194,304-bit high-speed Static RAM organized
as 256K x 16. It is fabricated using high-performance, high-reliability
CMOS technology. This state-of-the-art technology, combined with inno-
vative circuit design techniques, provides a cost-effective solution for high-
speed memory needs.
The IDT71V416 has an output enable pin which operates as fast as
5ns, with address access times as fast as 10ns. All bidirectional inputs and
outputs of the IDT71V416 are LVTTL-compatible and operation is from a
single 3.3V supply. Fully static asynchronous circuitry is used, requiring
no clocks or refresh for operation.
The IDT71V416 is packaged in a 44-pin, 400 mil Plastic SOJ and a
44-pin, 400 mil TSOP Type II package and a 48 ball grid array, 9mm x
9mm package.
Output
OE
Enable
Buffer
A0 - A17
Address
Buffers
Chip
CS
Select
Buffer
Write
WE
Enable
Buffer
BHE
BLE
Byte
Enable
Buffers
May.26.21
Row / Column
Decoders
4,194,304-bit
Memory
Array
8
8
Sense
16
Amps
and
Write
Drivers
8
8
High
Byte
8
Output
Buffer
High
Byte
8
Write
Buffer
Low
Byte
8
Output
Buffer
Low
Byte
8
Write
Buffer
I/O 15
I/O 8
I/O 7
I/O 0
3624 drw 01
1




 IDT71V416
71V416S, 71V416L, 3.3V CMOS Static RAM
4 Meg (256K x 16-Bit)
Pin Configurations - SOJ/TSOP(2)
Commercial and Industrial Temperature Ranges
Pin Configurations - BGA(1)
A0
1
A1
2
A2
3
A3
4
A4
5
CS
6
I/O0
7
I/O1
8
I/O2
9
I/O3
10
VDD
11
VSS
12
I/O4
13
I/O5
14
I/O6
15
I/O7
16
WE
17
A5
18
A6
19
A7
20
A8
21
A9
22
44
43
42
41
40
39
PHG44 38
or
37
PBG44 36
35
44-Pin 34
TSOP
33
SOJ
32
TopView 31
30
29
28
27
26
25
24
23
A17
A16
A15
OE
BHE
BLE
I/O15
I/O14
I/O13
I/O12
VSS
VDD
I/O11
I/O10
I/O9
I/O8
NC(1)
A14
A13
A12
A11
A10
3624 drw 02
BE48, BEG48
1
2
3
4
5
6
A BLE
OE
A0
A1
A2
NC
B I/O0
BHE
A3
A4
CS
I/O8
C I/O1
I/O2
A5
A6
I/O10
I/O9
D
VSS
I/O3
A17
A7
I/O11
VDD
E
VDD
I/O4
NC
A16
I/O12
VSS
F I/O6
I/O5
A14
A15
I/O13
I/O14
G I/O7
NC
A12
A13
WE
I/O15
H NC
A8
A9
A10
A11
NC
3624 tbl 11
Top View
NOTE:
1. This text does not indicate orientation of actual part-marking.
NOTES:
1. Pin 28 can either be a NC or connected to Vss.
2. This text does not indicate orientation of actual part-marking.
Pin Descriptions
A0 - A17
Address Inputs
CS
Chip Select
WE
Write Enable
OE
Output Enable
BHE
High Byte Enable
BLE
Low Byte Enable
I/O0 - I/O15
Data Input/Output
VDD
3.3V Power
VSS
Ground
Input
Input
Input
Input
Input
Input
I/O
Pwr
Gnd
3624 tbl 01
SOJ Capacitance
(TA = +25°C, f = 1.0MHz)
Symbol
Parameter(1)
CIN
Input Capacitance
CI/O
I/O Capacitance
Conditions
VIN = 3dV
VOUT = 3dV
Max. Unit
7 pF
8 pF
3624 tbl 02
BGA Capacitance
(TA = +25°C, f = 1.0MHz)
Symbol
Parameter(1)
Conditions Max. Unit
CIN
Input Capacitance
VIN = 3dV
6 pF
CI/O
I/O Capacitance
VOUT = 3dV
7 pF
NOTE:
3624 tbl 02b
1. This parameter is guaranteed by device characterization, but not production
tested.
6.422
May.26.21




 IDT71V416
71V416S, 71V416L, 3.3V CMOS Static RAM
4 Meg (256K x 16-Bit)
Commercial and Industrial Temperature Ranges
Absolute Maximum Ratings(1)
Symbol
Rating
Value
Unit
VDD
Supply Voltage Relative to VSS
-0.5 to +4.6
V
VIN, VOUT
Terminal Voltage Relative to
VSS
-0.5 to VDD+0.5
V
TBIAS Temperature Under Bias
-55 to +125
oC
TSTG Storage Temperature
-55 to +125
oC
PT
Power Dissipation
1
W
Recommended Operating
Temperature and Supply
Voltage
Grade
Temperature
VSS
Com m ercial
0OC to +70OC
0V
Industrial
–40OC to +85OC
0V
VDD
See Below
See Below
3624 tbl 05
IOUT DC Output Current
50
mA Recommended DC Operating
3624 tbl 04
NOTE:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
Conditions
Symbol
Parameter
VDD Supply Voltage
VSS Ground
Min. Typ. Max. Unit
3.0 3.3
3.6
V
0
0
0
V
VIH Input High Voltage
2.0
____
VDD+0.3(1)
V
VIL Input Low Voltage
-0.3(2) ____
0.8
V
NOTES:
3624 tbl 06
1. VIH (max.) = VDD+2V for pulse width less than 5ns, once per cycle.
2. VIL (min.) = –2V for pulse width less than 5ns, once per cycle.
Truth Table(1)
CS
OE
WE
BLE
BHE
H
X
X
X
X
L
L
H
L
H
L
L
H
H
L
L
L
H
L
L
L
X
L
L
L
L
X
L
L
H
L
X
L
H
L
L
H
H
X
X
L
X
X
H
H
NOTE:
1. H = VIH, L = VIL, X = Don't care.
I/O0-I/O7
High-Z
DATAOUT
High-Z
DATAOUT
DATAIN
DATAIN
High-Z
High-Z
High-Z
I/O8-I/O15
High-Z
High-Z
DATAOUT
DATAOUT
DATAIN
High-Z
DATAIN
High-Z
High-Z
Function
Deselected - Standby
Low Byte Read
High Byte Read
Word Read
Word Write
Low Byte Write
High Byte Write
Outputs Disabled
Outputs Disabled
3624 tbl 03
6.342
May.26.21




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