DatasheetsPDF.com

Electronic Fuse. NIS5420 Datasheet

DatasheetsPDF.com

Electronic Fuse. NIS5420 Datasheet
















NIS5420 Fuse. Datasheet pdf. Equivalent













Part

NIS5420

Description

+12 Volt Electronic Fuse



Feature


+12 Volt Electronic Fuse NIS5420 Series The NIS5420 eFuse is a cost effective, resettable fuse which can greatly enhan ce the reliability of a hard drive or o ther circuit from both catastrophic and shutdown failures. It is designed to b uffer the load device from excessive in put voltage which can damage sensitive circuits. It also includes an overvolta ge clamp circuit t.
Manufacture

ON Semiconductor

Datasheet
Download NIS5420 Datasheet


ON Semiconductor NIS5420

NIS5420; hat limits the output voltage during tra nsients but does not shut the unit down , thereby allowing the load circuit to continue operation. Features • Integr ated Power Device • Power Device Ther mally Protected • No External Current Shunt Required • 8 V to 18 V Input R ange • 39 mW Typical • Internal Cha rge Pump • Internal Undervoltage Lock out Circuit • Internal Overvolta.


ON Semiconductor NIS5420

ge Clamp • ESD Ratings: Human Body Mod el (HBM); 2000 V • These Devices are Pb−Free, Halogen Free/BFR Free and ar e RoHS Compliant Typical Applications Hard Drives • Mother Board Power M anagement • Fan Drives www.onsemi.co m 4.6 AMP, 12 VOLT ELECTRONIC FUSE MA RKING DIAGRAM WDFN10 CASE 522AA XXXXX XXXXX ALYWG G XXX = Specific Device C ode A = Assembly Location L = .


ON Semiconductor NIS5420

Wafer Lot Y = Year W = Work Week G = Pb Free Package (Note: Microdot may be i n either location) PIN CONNECTIONS GN D Src dV/dt Src En/Flt VCC Src I LIM Src NC/ISENSE Src WDFN10 (Top V iew) ORDERING INFORMATION See detailed ordering, marking and shipping informa tion in the ordering information sectio n on page 11 of this data sheet. © Se miconductor Component.





Part

NIS5420

Description

+12 Volt Electronic Fuse



Feature


+12 Volt Electronic Fuse NIS5420 Series The NIS5420 eFuse is a cost effective, resettable fuse which can greatly enhan ce the reliability of a hard drive or o ther circuit from both catastrophic and shutdown failures. It is designed to b uffer the load device from excessive in put voltage which can damage sensitive circuits. It also includes an overvolta ge clamp circuit t.
Manufacture

ON Semiconductor

Datasheet
Download NIS5420 Datasheet




 NIS5420
+12 Volt Electronic Fuse
NIS5420 Series
The NIS5420 eFuse is a cost effective, resettable fuse which can
greatly enhance the reliability of a hard drive or other circuit from both
catastrophic and shutdown failures.
It is designed to buffer the load device from excessive input voltage
which can damage sensitive circuits. It also includes an overvoltage
clamp circuit that limits the output voltage during transients but does
not shut the unit down, thereby allowing the load circuit to continue
operation.
Features
Integrated Power Device
Power Device Thermally Protected
No External Current Shunt Required
8 V to 18 V Input Range
39 mW Typical
Internal Charge Pump
Internal Undervoltage Lockout Circuit
Internal Overvoltage Clamp
ESD Ratings: Human Body Model (HBM); 2000 V
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
Hard Drives
Mother Board Power Management
Fan Drives
www.onsemi.com
4.6 AMP, 12 VOLT
ELECTRONIC FUSE
MARKING
DIAGRAM
WDFN10
CASE 522AA
XXXXX
XXXXX
ALYWG
G
XXX = Specific Device Code
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
PIN CONNECTIONS
GND
Src
dV/dt
Src
En/Flt
VCC
Src
ILIM
Src
NC/ISENSE
Src
WDFN10
(Top View)
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
ordering information section on page 11 of this data sheet.
© Semiconductor Components Industries, LLC, 2018
1
March, 2021 Rev. 2
Publication Order Number:
NIS5420/D




 NIS5420
ENABLE/
FAULT
Enable
Thermal
Shutdown
NIS5420 Series
VCC
Charge
Pump
Current
Limit
SOURCE
ILIMIT
UVLO
Voltage
Clamp
dv/dt
Control
dv/dt
GND
Figure 1. Block Diagram
(NIS5420MT3, NIS5420MT4, NIS5420MT5)
VCC
ENABLE/
FAULT
Enable
Charge
Pump
Thermal
Shutdown
UVLO
Current
Limit
Voltage
Clamp
dv/dt
Control
Current
Monitor
SOURCE
ILIMIT
ISENSE
dv/dt
GND
Figure 2. Block Diagram
(NIS5420MT1, NIS5420MT2, NIS5420MT6, NIS5420MT7, NIS5420MT8
www.onsemi.com
2




 NIS5420
NIS5420 Series
Table 1. FUNCTIONAL PIN DESCRIPTION
Pin
Function
Description
1
Ground
Negative input voltage to the device. This is used as the internal reference for the IC.
2
dv/dt
The internal dv/dt circuit controls the slew rate of the output voltage at turn on. It has an internal
capacitor that allows it to ramp up over a period of 2 ms. An external capacitor can be added to this
pin to increase the ramp time. If an additional time delay is not required, this pin should be left open.
3
Enable/Fault The enable/fault pin is a tristate, bidirectional interface. It can be pulled to ground with external
opendrain or open collector device to shutdown the eFuse. It can also be used as a status indicator;
if the voltage level is intermediate around 1.4 V the eFuse is in the thermal shutdown, if the voltage
level is high around 3 V the eFuse is operating normally. Do not actively drive this pin to any
voltage. Do not connect a capacitor to this pin.
4
ILimit
A resistor between this pin and the source pin sets the overload and short circuit current limit levels.
5
NC
For NIS5420MT3, NIS5420MT4 and NIS5420MT5
610
ISENSE
Source
For NIS5420MT1, NIS5420MT2, NIS5420MT6, NIS5420MT7 and NIS5420MT8 load current monitor
allows the system to monitor the load current in real time. Connect RSENSE to GND.
This pin is the source of the internal power FET and the output terminal of the fuse.
11 (belly pad)
VCC
Positive input voltage to the device.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Input Voltage, operating, steadystate (VCC to GND, Note 1)
Transient (100 ms)
VIN
0.6 to 18
V
0.6 to 25
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Negative voltage will not damage device provided that the power dissipation is limited to the rated allowable power for the package.
Table 2. THERMAL RATINGS
Rating
Thermal Resistance, JunctiontoAir
(4 layer HighK JEDEC JESD517 PCB, 100 mm2, 2 oz. Cu)
Thermal Characterization Parameter, JunctiontoLead
(4 layer HighK JEDEC JESD517 PCB, 100 mm2, 2 oz. Cu)
Thermal Characterization Parameter, JunctiontoBoard
(4 layer HighK JEDEC JESD517 PCB, 100 mm2, 2 oz. Cu)
Thermal Characterization Parameter, JunctiontoCase Top
(4 layer HighK JEDEC JESD517 PCB, 100 mm2, 2 oz. Cu)
Total Power Dissipation @ TA = 25°C
(4 layer HighK JEDEC JESD517
PCB,
100
mm2,
2
oz.
Cu)
Derate above 25°C
Operating Ambient Temperature Range
Operating Junction Temperature Range
Nonoperating Temperature Range
Lead Temperature, Soldering (10 Sec)
Symbol
qJA
YJL
YJB
YJT
Pmax
TA
TJ
TSTG
TL
Value
90
27.5
27.5
7.6
1.39
11.1
40 to 125
40 to 150
55 to 155
260
Unit
°C/W
°C/W
°C/W
°C/W
W
mW/°C
°C
°C
°C
°C
www.onsemi.com
3




Recommended third-party NIS5420 Datasheet







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)