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Power MOSFET. IRFH4201 Datasheet

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Power MOSFET. IRFH4201 Datasheet
















IRFH4201 MOSFET. Datasheet pdf. Equivalent













Part

IRFH4201

Description

Power MOSFET



Feature


IRFH4201PbF HEXFET® Power MOSFET VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5 V) Qg (typical) ID (@TC (Bottom) = 25° C) 25 0.95 1.25 46.0 100 V m  nC A PQFN 5X6 mm Applicatio ns Synchronous Rectifier MOSFET f or Sync Buck Converters Secondary Synchronous Rectifier MOSFET for isola ted DC-DC converters Active ORing and Hot Swap Battery Operated DC Motor In.
Manufacture

Infineon

Datasheet
Download IRFH4201 Datasheet


Infineon IRFH4201

IRFH4201; verters Features Low RDSon (<0.95 m) Low Thermal Resistance to PCB (<0.8°C /W) Low Profile (<0.9 mm) Industry-Stan dard Pinout Compatible with Existing Su rface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial Qualifica tion Benefits Lower Conduction Losses Enable better thermal dissipation resul ts in Increased Power Density  Mu lti-Vendor Compatibility .


Infineon IRFH4201

Easier Manufacturing Environmentally Fri endlier Increased Reliability Base par t number IRFH4201PbF Package Type PQFN 5mm x 6 mm Standard Pack Form Quant ity Tape and Reel 4000 Orderable Par t Number IRFH4201TRPbF Absolute Maximu m Ratings VGS ID @ TA = 25°C ID @ TC( Bottom) = 25°C ID @ TC(Bottom) = 100° C ID @ TC(Bottom) = 25°C IDM PD @TA = 25°C PD @TC(Bottom) = .


Infineon IRFH4201

25°C TJ TSTG Parameter Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10 V Continuous Drain Current, VGS @ 10V C ontinuous Drain Current, VGS @ 10V (Sou rce Bonding Technology Limited) Pulsed Drain Current  Power Dissipation  Power Dissipation Linear Derating Fact or Operating Junction and Storage Tempe rature Range Notes  t.




Part

IRFH4201

Description

Power MOSFET



Feature


IRFH4201PbF HEXFET® Power MOSFET VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5 V) Qg (typical) ID (@TC (Bottom) = 25° C) 25 0.95 1.25 46.0 100 V m  nC A PQFN 5X6 mm Applicatio ns Synchronous Rectifier MOSFET f or Sync Buck Converters Secondary Synchronous Rectifier MOSFET for isola ted DC-DC converters Active ORing and Hot Swap Battery Operated DC Motor In.
Manufacture

Infineon

Datasheet
Download IRFH4201 Datasheet




 IRFH4201
IRFH4201PbF
HEXFET® Power MOSFET
VDSS
RDS(on) max
(@ VGS = 10V)
(@ VGS = 4.5V)
Qg (typical)
ID
(@TC (Bottom) = 25°C)
25
0.95
1.25
46.0
100
V
m
nC
A
PQFN 5X6 mm
Applications
Synchronous Rectifier MOSFET for Sync Buck Converters
Secondary Synchronous Rectifier MOSFET for isolated DC-DC converters
Active ORing and Hot Swap
Battery Operated DC Motor Inverters
Features
Low RDSon (<0.95 m)
Low Thermal Resistance to PCB (<0.8°C/W)
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial Qualification
Benefits
Lower Conduction Losses
Enable better thermal dissipation
results in Increased Power Density
 Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base part number
IRFH4201PbF
Package Type
PQFN 5mm x 6 mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFH4201TRPbF
Absolute Maximum Ratings
VGS
ID @ TA = 25°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
ID @ TC(Bottom) = 25°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
TJ
TSTG
Parameter
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
(Source Bonding Technology Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Notes through are on page 9
1
Max.
± 20
49
326
206
100
400
3.5
156
0.028
-55 to + 150
Units
V
A
W
W/°C
°C
2017-01-24




 IRFH4201
IRFH4201PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
BVDSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
VGS(th)
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
gfs
Forward Transconductance
Qg
Total Gate Charge
Qg
Total Gate Charge
Qgs1
Pre-Vth Gate-to-Source Charge
Qgs2
Post-Vth Gate-to-Source Charge
Qgd
Gate-to-Drain Charge
Qgodr
Gate Charge Overdrive
Qsw
Switch Charge (Qgs2 + Qgd)
Qoss
Output Charge
RG
Gate Resistance
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Avalanche Characteristics
Parameter
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Thermal Resistance
RJC (Bottom)
RJC (Top)
RJA
RJA (<10s)
Parameter
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
Min.
25
–––
–––
–––
1.1
–––
–––
–––
–––
175
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
20
0.70
0.97
1.6
-5.9
–––
–––
–––
–––
94.0
46.0
11.0
6.4
16.0
12.6
22.4
46.0
0.9
20
43
24
19
6100
1700
450
Max.
–––
–––
0.95
1.25
2.1
–––
1.0
100
-100
–––
–––
69.0
–––
–––
–––
–––
–––
–––
2.7
–––
–––
–––
–––
–––
–––
–––
Units
Conditions
V VGS = 0V, ID = 250µA
mV/°C Reference to 25°C, ID = 1mA
m
VGS = 10V, ID = 50A
VGS = 4.5V, ID = 50A
V VDS = VGS, ID = 150µA
mV/°C
µA VDS = 20V, VGS = 0V
nA
VGS = 20V
VGS = -20V
S VDS = 13V, ID = 50A
nC VGS = 10V, VDS = 13V, ID = 50A
VDS = 13V
nC VGS = 4.5V
ID = 50A
nC VDS = 16V, VGS = 0V
VDD = 13V, VGS = 4.5V
ns ID = 50A
RG=1.8
VGS = 0V
pF VDS = 13V
ƒ = 1.0MHz
Typ.
–––
–––
Max.
478
50
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
31
84
Max.
100
400
1.0
47
126
Units
Conditions
MOSFET symbol
D
A
showing the
integral reverse
G
p-n junction diode.
S
V TJ = 25°C, IS = 50A, VGS = 0V
ns TJ = 25°C, IF = 50A, VDD = 13V
nC di/dt = 400A/µs
Typ.
–––
–––
–––
–––
Max.
0.8
18
36
22
Units
°C/W
2
2017-01-24




 IRFH4201
IRFH4201PbF
1000
100
10
TOP
BOTTOM
VGS
10V
5.0V
4.5V
3.5V
3.1V
2.9V
2.7V
2.5V
1
0.1
0.01
2.5V
60µs PULSE WIDTH
Tj = 25°C
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
1000
Fig 1. Typical Output Characteristics
1000
100
TJ = 150°C
10
TJ = 25°C
1000
100
TOP
BOTTOM
VGS
10V
5.0V
4.5V
3.5V
3.1V
2.9V
2.7V
2.5V
10
2.5V
1
0.01
60µs PULSE WIDTH
Tj = 150°C
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
1000
Fig 2. Typical Output Characteristics
1.6
ID = 50A
1.4 VGS = 10V
1.2
1.0
1
0.1
1.0
VDS = 15V
60µs PULSE WIDTH
1.5
2.0
2.5
3.0
3.5
VGS, Gate-to-Source Voltage (V)
0.8
0.6
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
1000
Crss
Fig 4. Normalized On-Resistance vs. Temperature
14.0
ID= 50A
12.0
VDS= 20V
10.0
VDS= 13V
8.0
6.0
4.0
2.0
100
1
10
100
VDS, Drain-to-Source Voltage (V)
0.0
0
20 40 60 80 100 120
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
3
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
2017-01-24




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