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Power MOSFET. IRF7769L1 Datasheet

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Power MOSFET. IRF7769L1 Datasheet
















IRF7769L1 MOSFET. Datasheet pdf. Equivalent













Part

IRF7769L1

Description

Power MOSFET



Feature


IRF7769L1TRPbF Applications RoHS Compliant, Halogen Free  Lead- Free (Qualified up to 260°C Reflow) Ideal for High Performance Isol ated Converter Primary Switch Socket Optimized for Synchronous Rectifica tion Low Conduction Losses  High Cdv/dt Immunity Low Profile (<0.7mm) Dual Sided Cooling Compa tible  Compatible with existing Surface Mount Techni.
Manufacture

Infineon

Datasheet
Download IRF7769L1 Datasheet


Infineon IRF7769L1

IRF7769L1; ques  Industrial Qualified Appl icable DirectFET Outline and Substrate Outline  DirectFET™ Power MOSFET Typical values (unless otherwise spe cified) VDSS 100V min VGS ±20V max RDS(on) 2.8m@ 10V Qg tot Qgd V gs(th) 200nC 110nC 2.7V S S D G S S S S S D S L8 DirectFET™ ISOMETRIC SB SC M2 M4 L4 L6 L8 Description The IRF7769L1TRPbF combin.


Infineon IRF7769L1

es the latest HEXFET® Power MOSFET Sili con technology with the advanced Direct FETTM packaging to achieve the lowest o n-state resistance in a package that ha s a footprint smaller than a D2PAK and only 0.7 mm profile. The DirectFET™ p ackage is compatible with existing layo ut geometries used in power application s, PCB assembly equipment and vapor pha se, infra-red or conv.


Infineon IRF7769L1

ection soldering techniques, when applic ation note AN-1035 is followed regardin g the manufacturing methods and process es. The DirectFET™ package allows dua l sided cooling to maximize thermal tra nsfer in power systems. The IRF7769L1TR PbF is optimized for high frequency swi tching and synchronous rectification ap plications. The reduced total losses in the device coupled .





Part

IRF7769L1

Description

Power MOSFET



Feature


IRF7769L1TRPbF Applications RoHS Compliant, Halogen Free  Lead- Free (Qualified up to 260°C Reflow) Ideal for High Performance Isol ated Converter Primary Switch Socket Optimized for Synchronous Rectifica tion Low Conduction Losses  High Cdv/dt Immunity Low Profile (<0.7mm) Dual Sided Cooling Compa tible  Compatible with existing Surface Mount Techni.
Manufacture

Infineon

Datasheet
Download IRF7769L1 Datasheet




 IRF7769L1
IRF7769L1TRPbF
Applications
RoHS Compliant, Halogen Free
Lead-Free (Qualified up to 260°C Reflow)
Ideal for High Performance Isolated Converter
Primary Switch Socket
Optimized for Synchronous Rectification
Low Conduction Losses
High Cdv/dt Immunity
Low Profile (<0.7mm)
Dual Sided Cooling Compatible
Compatible with existing Surface Mount Techniques
Industrial Qualified
Applicable DirectFET Outline and Substrate Outline
DirectFET™ Power MOSFET
Typical values (unless otherwise specified)
VDSS
100V min
VGS
±20V max
RDS(on)
2.8m@ 10V
Qg tot
Qgd
Vgs(th)
200nC
110nC
2.7V
S
S
D
G
S
S
S
S
S
D
S
L8
DirectFETISOMETRIC
SB
SC
M2
M4
L4
L6
L8
Description
The IRF7769L1TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging
to achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile. The
DirectFET™ package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor
phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods
and processes. The DirectFET™ package allows dual sided cooling to maximize thermal transfer in power systems.
The IRF7769L1TRPbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses
in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for
system reliability improvements, and makes this device ideal for high performance power converters.
Ordering Information
Part number
IRF7769L1TRPbF
Package Type
DirectFET Large Can
Standard Pack
Form
Quantity
Tape and Reel
4000
Note
“TR” suffix
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TA = 25°C
ID @ TC = 25°C
IDM
EAS
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
Single Pulse Avalanche Energy
IAR
Avalanche Current
Max.
100
±20
124
88
20
375
500
260
74
Units
V
A
mJ
A
12.00
10.00
ID = 74A
8.00
6.00
TJ = 125°C
4.00
2.00
TJ = 25°C
0.00
2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0
VGS, Gate-to-Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
3.10
TA= 25°C
3.00
2.90
VGS = 7.0V
VGS = 8.0V
VGS = 10V
VGS = 15V
2.80
20
40
60
80
100
ID, Drain Current (A)
Fig 2. Typical On-Resistance vs. Drain Current
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.09mH, RG = 25, IAS = 74A.
1
2016-10-14




 IRF7769L1
IRF7769L1TRPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS
VDSS/TJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VGS(th)/TJ Gate Threshold Voltage Temp. Coefficient
IDSS
Drain-to-Source Leakage Current
IGSS
gfs
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre– Vth Gate-to-Source Charge
Post– Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Min. Typ. Max.
100 ––– –––
––– 0.02 –––
––– 2.8 3.5
2.0 2.7 4.0
––– -10 –––
––– ––– 20
––– ––– 250
––– ––– 100
––– ––– -100
410 ––– –––
––– 200 300
––– 30 –––
––– 9.0 –––
––– 110 165
––– 51 –––
––– 119 –––
––– 53 –––
––– 1.5 –––
––– 44 –––
––– 32 –––
––– 92 –––
––– 41 –––
––– 11560 –––
––– 1240 –––
––– 590 –––
––– 6665 –––
––– 690 –––
Units
Conditions
V
V/°C
m
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 2mA
VGS = 10V, ID = 74A
V
mV/°C
VDS = VGS, ID = 250µA
µA
VDS = 100 V, VGS = 0V
VDS = 80V,VGS = 0V,TJ =125°C
nA
VGS = 20V
VGS = -20V
S VDS = 25V, ID = 74A
VDS = 50V
nC VGS = 10V
ID = 74A
See Fig.9
nC VDS = 16V,VGS = 0V

VDD = 50V, VGS = 10V
ns
ID = 74A
RG= 1.8
VGS = 0V
VDS = 25V
pF ƒ = 1.0MHz
VGS=0V, VDS = 1.0V,ƒ =1.0MHz
VGS=0V, VDS = 80V,ƒ =1.0MHz
Min.
–––
–––
–––
–––
–––
Typ. Max.
––– 124
––– 500
––– 1.3
75 112
220 330
Units
A
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C,IS = 74A,VGS = 0V 
TJ = 25°C ,IF = 74A,VDD = 50V
di/dt = 100A/µs 
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width 400µs; duty cycle 2%
2
2016-10-14




 IRF7769L1
IRF7769L1TRPbF
Absolute Maximum Ratings
Symbol
Parameter
PD @TC = 25°C Power Dissipation
PD @TC = 100°C Power Dissipation
PD @TA = 25°C Power Dissipation
TP
Peak Soldering Temperature
TJ
Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
Symbol
Parameter
RqJA
RqJA
RqJA
RqJC
RqJA-PCB
Junction-to-Ambient 
Junction-to-Ambient 
Junction-to-Ambient 
Junction-to-Can 
Junction-to-PCB Mounted
10
Max.
125
63
3.3
270
-55 to + 175
Units
W
°C
Typ.
–––
12.5
20
–––
–––
Max.
45
–––
–––
1.2
0.4
Units
°C/W
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
0.001
0.0001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
Ri (°C/W) i (sec)
J J
1 1
R1R1
R 2R 2
2 2
R 3R 3
3 3
R 4R 4
0.1080
4 4
CC 0.6140
0.000171
0.053914
Ci= iRi
Ci= iRi
0.4520 0.006099
1.47e-05 0.036168
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 3. Maximum Eec ve Transient Thermal Impedance, Junc ontoCase
Notes:
Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple incontact with top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Used double sided cooling, mounting pad with large heatsink.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Ris measured at TJ of approximately 90°C.
Surface mounted on 1 in. square Cu
board (still air).
3
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink (still air)
2016-10-14




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