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MOSFET. 012N08N5 Datasheet

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MOSFET. 012N08N5 Datasheet
















012N08N5 MOSFET. Datasheet pdf. Equivalent













Part

012N08N5

Description

MOSFET



Feature


IPT012N08N5 MOSFET OptiMOSTM5Power-Tr ansistor,80V Features •Idealforh ighfrequencyswitchingandsync.rec. •ExcellentgatechargexRDS(on)pro duct(FOM) •Verylowon-resistance RDS(on) •N-channel,normallevel • 100%avalanchetested •Pb-freeplat ing;RoHScompliant •Qualifiedaccor dingtoJEDEC1)fortargetapplication s •Halogen-freeaccordingtoIE.
Manufacture

Infineon

Datasheet
Download 012N08N5 Datasheet


Infineon 012N08N5

012N08N5; C61249-2-21 Table1KeyPerformance Parameters Parameter Value Unit VD S 80 V RDS(on),max 1.2 mΩ ID 4 00 A Qoss 208 nC QG(0V..10V) 178 nC HSOF Tab 12345 678 Drain Tab Gat e Pin 1 Source Pin 2-8 Type/Orderin gCode IPT012N08N5 Package PG-HSOF-8 Marking 012N08N5 RelatedLinks - 1) J -STD20 and JESD22 Final Data Sheet 1 Rev.2.3,2020-10-.


Infineon 012N08N5

23 OptiMOSTM5Power-Transistor,80V I PT012N08N5 TableofContents Descriptio n . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..


Infineon 012N08N5

. . . . . . . . . . . . . 3 Thermal cha racteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Elect rical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical chara.





Part

012N08N5

Description

MOSFET



Feature


IPT012N08N5 MOSFET OptiMOSTM5Power-Tr ansistor,80V Features •Idealforh ighfrequencyswitchingandsync.rec. •ExcellentgatechargexRDS(on)pro duct(FOM) •Verylowon-resistance RDS(on) •N-channel,normallevel • 100%avalanchetested •Pb-freeplat ing;RoHScompliant •Qualifiedaccor dingtoJEDEC1)fortargetapplication s •Halogen-freeaccordingtoIE.
Manufacture

Infineon

Datasheet
Download 012N08N5 Datasheet




 012N08N5
IPT012N08N5
MOSFET
OptiMOSTM5Power-Transistor,80V
Features
•Idealforhighfrequencyswitchingandsync.rec.
•ExcellentgatechargexRDS(on)product(FOM)
•Verylowon-resistanceRDS(on)
•N-channel,normallevel
•100%avalanchetested
•Pb-freeplating;RoHScompliant
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
80
V
RDS(on),max
1.2
m
ID
400
A
Qoss
208
nC
QG(0V..10V)
178
nC
HSOF
Tab
12345 678
Drain
Tab
Gate
Pin 1
Source
Pin 2-8
Type/OrderingCode
IPT012N08N5
Package
PG-HSOF-8
Marking
012N08N5
RelatedLinks
-
1) J-STD20 and JESD22
Final Data Sheet
1
Rev.2.3,2020-10-23




 012N08N5
OptiMOSTM5Power-Transistor,80V
IPT012N08N5
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.2.3,2020-10-23




 012N08N5
OptiMOSTM5Power-Transistor,80V
IPT012N08N5
1Maximumratings
atTA=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current1)
Pulsed drain current3)
Avalanche energy, single pulse4)
Gate source voltage
Power dissipation
Operating and storage temperature
ID
ID,pulse
EAS
VGS
Ptot
Tj,Tstg
Min.
-
-
-
-
-
-20
-
-55
Values
Typ. Max.
-
400
-
283
-
56
-
1600
-
817
-
20
-
375
-
175
Unit Note/TestCondition
VGS=10V,TC=25°C
A VGS=10V,TC=100°C
VGS=10V,TA=25°C,RthJA=40K/W2)
A TC=25°C
mJ ID=150A,RGS=25
V-
W TC=25°C
°C
IEC climatic category;
DIN IEC 68-1: 55/175/56
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case
Device on PCB,
minimal footprint
Device on PCB,
6 cm² cooling area2)
RthJC
RthJA
RthJA
Min.
-
Values
Typ. Max.
0.2 0.4
Unit Note/TestCondition
K/W -
-
-
62 K/W -
-
-
40 K/W -
1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
at25°C.ForhighercasetemperaturepleaserefertoDiagram2.De-ratingwillberequiredbasedontheactual
environmental conditions.
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) See figure 3 for more detailed information
4) See figure 13 for more detailed information
Final Data Sheet
3
Rev.2.3,2020-10-23




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