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MOSFET. IPP045N10N3 Datasheet

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MOSFET. IPP045N10N3 Datasheet
















IPP045N10N3 MOSFET. Datasheet pdf. Equivalent













Part

IPP045N10N3

Description

MOSFET



Feature


IPP045N10N3G MOSFET OptiMOSª3Power-T ransistor,100V Features •N-channel ,normallevel •Excellentgatecharg exRDS(on)product(FOM) •Verylow on-resistanceRDS(on) •175°Copera tingtemperature •Pb-freeleadplati ng;RoHScompliant •Qualifiedaccord ingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitching andsynchronousrectification •Ha.
Manufacture

Infineon

Datasheet
Download IPP045N10N3 Datasheet


Infineon IPP045N10N3

IPP045N10N3; logen-freeaccordingtoIEC61249-2-21 T able1KeyPerformanceParameters Parameter Value Unit VDS 100 V RD S(on),max 4.5 mΩ ID 137 A TO-22 0-3 tab Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Type/OrderingCode IPP0 45N10N3 G Package PG-TO 220-3 Marking 045N10N RelatedLinks - 1) J-STD20 a nd JESD22 Final Data Sheet 1 Rev.2. 9,2017-07-28 Opti.


Infineon IPP045N10N3

MOSª3Power-Transistor,100V IPP045N10 N3G TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maxi mum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


Infineon IPP045N10N3

. . . . . . . . . . 3 Thermal characteri stics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical c haracteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Elect rical characterist.





Part

IPP045N10N3

Description

MOSFET



Feature


IPP045N10N3G MOSFET OptiMOSª3Power-T ransistor,100V Features •N-channel ,normallevel •Excellentgatecharg exRDS(on)product(FOM) •Verylow on-resistanceRDS(on) •175°Copera tingtemperature •Pb-freeleadplati ng;RoHScompliant •Qualifiedaccord ingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitching andsynchronousrectification •Ha.
Manufacture

Infineon

Datasheet
Download IPP045N10N3 Datasheet




 IPP045N10N3
IPP045N10N3G
MOSFET
OptiMOSª3Power-Transistor,100V
Features
•N-channel,normallevel
•ExcellentgatechargexRDS(on)product(FOM)
•Verylowon-resistanceRDS(on)
•175°Coperatingtemperature
•Pb-freeleadplating;RoHScompliant
•QualifiedaccordingtoJEDEC1)fortargetapplication
•Idealforhigh-frequencyswitchingandsynchronousrectification
•Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
100
V
RDS(on),max
4.5
m
ID
137
A
TO-220-3
tab
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
Type/OrderingCode
IPP045N10N3 G
Package
PG-TO 220-3
Marking
045N10N
RelatedLinks
-
1) J-STD20 and JESD22
Final Data Sheet
1
Rev.2.9,2017-07-28




 IPP045N10N3
OptiMOSª3Power-Transistor,100V
IPP045N10N3G
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Final Data Sheet
2
Rev.2.9,2017-07-28




 IPP045N10N3
OptiMOSª3Power-Transistor,100V
IPP045N10N3G
1Maximumratings
atTA=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current
Pulsed drain current1)
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
ID
ID,pulse
EAS
VGS
Ptot
Tj,Tstg
Min.
-
-
-
-
-20
-
-55
Values
Typ. Max.
-
137
-
105
-
548
-
340
-
20
-
214
-
175
Unit Note/TestCondition
A
TC=25°C1)
TC=100°C
A TC=25°C
mJ ID=100A,RGS=25
V-
W TC=25°C
°C
IEC climatic category;
DIN IEC 68-1: 55/175/56
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case RthJC
Thermal resistance, junction - ambient,
minimal footprint
RthJA
Thermal resistance, junction - ambient,
6 cm2 cooling area2)
RthJA
Min.
-
Values
Typ. Max.
-
0.7
Unit Note/TestCondition
K/W -
-
-
62 K/W -
-
-
50 K/W -
3Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
RG
gfs
Min.
100
2
-
-
-
-
-
-
73
Values
Typ. Max.
-
-
2.7 3.5
0.1 1
10 100
1
100
3.9 4.5
4.7 7.7
1.4 -
145 -
Unit Note/TestCondition
V VGS=0V,ID=1mA
V
VDS=VGS,ID=150µA
µA
VDS=100V,VGS=0V,Tj=25°C
VDS=100V,VGS=0V,Tj=125°C
nA VGS=20V,VDS=0V
m
VGS=10V,ID=100A
VGS=6V,ID=50A
-
S
|VDS|>2|ID|RDS(on)max,ID=100A
1) See Diagram 3
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air.
Final Data Sheet
3
Rev.2.9,2017-07-28




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